Results 111 to 120 of about 4,873 (226)
Currents in the Compressible and Incompressible Regions of the 2DEG
We derive a general expression for the low-temperature current distribution in a two-dimensional electron gas, subjected to a perpendicular magnetic field and in a confining potential that varies slowly on the scale of the magnetic length l. The analysis is based on a self-consistent one-electron description, such as the Hartree or standard Kohn-Sham ...
Geller, Michael R., Vignale, Giovanni
openaire +2 more sources
Normally Off AlGaN/GaN Metal–2DEG Tunnel-Junction Field-Effect Transistors
We present the first AlGaN/GaN tunnel-junction FETs (TJ-FETs) featuring a metal2-D-electron-gas (2DEG) Schottky tunnel junction at the source. The control of the source-to-drain current flow is realized through a gate-controlled tunnel junction instead ...
Yuan, Li +5 more
core +1 more source
Polar Discontinuity Governs Surface Segregation and Interface Termination: A case study of LaInO3/BaSnO3 [PDF]
Albrecht Martin
doaj +1 more source
The two-dimensional electron gas (2DEG) at the LaAlO $$_3$$ /SrTiO $$_3$$ (LAO/STO) interface exhibits gate-tunable superconductivity with a dome-like shape of critical temperature as a function of electron concentration.
Paweł Wójcik +4 more
doaj +1 more source
Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications
An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 °C and 125 °C.
Naeemul Islam +5 more
doaj +1 more source
Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization
The contribution of spontaneous and piezoelectric polarization to the formation of a 2DEG in AlGaN/GaN heterostructures was investigated using undoped AlGaN/GaN structures.
C.R. Elsass +5 more
core +1 more source
© 2017 Author(s). We experimentally observed a terahertz (THz) radiation of electrically driven 2D electron gas (2DEG) plasmons in AlGaN/AlN/GaN structures at T = 110 K.
Kašalynas, I +17 more
core +1 more source
Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors
Structures, devices and methods are provided for creating heterojunction AlGaN/GaN metal two-dimensional electron gas (2DEG) tunnel-junction field-effect transistors (TJ-FET).
Yuan, Li +3 more
core
Effect of strain on a two-plate capacitor with two-dimensional electron gas (2DEG)
The aim of the present paper is devoted to study the capacitance for Two-dimensional electron gas (2DEG), 2DEG with electron area density n separated from perfect metal electrodes by an insulator of thickness d is described.
Atef F Amin
core
Microwave Characterization of GaN-on-Si Heterostructure Loss and 2DEG as a Conductor [PDF]
GaN devices have been dubbed the future of high frequency, high power applications due to the material properties of GaN that promises a clear advantage over competing technologies. Heteroepitaxial growth of AlGaN/GaN on Si has gained popularity in
Berber, Feyza
core

