Results 111 to 120 of about 17,889 (195)

p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications. [PDF]

Sci Rep
Kumar M, Labau T, Xu L, Zgheib J, Escoffier R, Buckley J.   +5 more
europepmc   +1 more source

Advances in High-Voltage Power Electronics Using Ga₂O₃-Based HEMT: Modeling. [PDF]

Materials (Basel)
Alhasani R, Hussain H, Alkhamisah MA, Hiazaa A, Alharbi A.   +4 more
europepmc   +1 more source

Tunable high-efficiency microwave photon detector based on a double quantum dot coupled to a superconducting high-impedance cavity. [PDF]

Sci Adv
Oppliger F, Jang W, Tarascio A, De Palma F, Reichl C, Wegscheider W, Maisi VF, Zumbühl D, Scarlino P.   +8 more
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +1 more source

The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]

Micromachines (Basel)
Shi Y, Chen Y, He L, Chen X, Chen Y, Lu G.   +5 more
europepmc   +1 more source

Impact of Carbon Diffusion Induced Stress on the Properties of Diamond/GaN Heterojunctions. [PDF]

Nanomaterials (Basel)
Sun H, Wu M, Xu P, Yuan C, Yang L, Lu H, Hou B, Zhang M, Ma X, Hao Y.   +9 more
europepmc   +1 more source

Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review. [PDF]

Micromachines (Basel)
Lee CT, Lee HY.
europepmc   +1 more source

Signatures of Polar Metal Phase in the Quasi-2D Electron System in PLD-Grown Amorphous-Epitaxial Oxide Heterostructures. [PDF]

Nano Lett
Sambri A, Chen Y, Mazzola F, Di Gennaro E, Rubano A, Rath M, Paparo D, Caputo M, Chikina A, Kumar D, Strocov VN, Salluzzo M, Miletto Granozio F.   +12 more
europepmc   +1 more source

Correlation stabilized anomalous Hall crystal in bilayer graphene. [PDF]

Nat Commun
Guo Z, Liu J.
europepmc   +1 more source

The characteristics and polarization effects in AlInGaN barrier GaN MISHEMT with various compositions of group III elements. [PDF]

Sci Rep
Langpoklakpam C, Tu CC, Chang EY, Lin CH, Kuo HC.   +4 more
europepmc   +1 more source