Theoretical modelling of oxide 2DEGs
Report on the study of realistic multi-orbital model hamiltonians of oxide 2DEGs, including SOC, treated by tight-binding approaches and Greens function formalism to study buk properties and optize growth parameters in T1.2.
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Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]
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Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]
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Uniaxial spin texture in a superconducting electron gas revealed by exchange interactions. [PDF]
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Chen SH, Tan SG, Chang CR.
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Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]
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Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]
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Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]
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Catalytic Electron-Driven Non-Equilibrium Phase Transition in Quantum Electronic Heterostructures. [PDF]
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