Results 141 to 150 of about 4,873 (226)

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]

ACS Omega
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source

Catalytic Electron-Driven Non-Equilibrium Phase Transition in Quantum Electronic Heterostructures. [PDF]

Adv Sci (Weinh)
Park BC, Jerng SK, Chun SH, Shin HS, Rotermund F, Min B.   +5 more
europepmc   +1 more source

Cryogenic in situ fabrication of reversible direct write logic circuits and devices. [PDF]

Nat Commun
Hong Y, Wang L, Shen Z, Li T, Wei L, Hu S, Liu J, Xiao W, Li L, Huijben M, Chen K, Gan Y, Rijnders G, Koster G, Liao Z.   +14 more
europepmc   +1 more source

Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. [PDF]

Micromachines (Basel)
Cheng Q, Yang M, Gao Z, Wang R, He J, Yan F, Tang X, Zhang W, Hu Z, Mu J.   +9 more
europepmc   +1 more source

Infrared Near-Field Spectroscopy of AlGaN/GaN Heterostructures for Probing Two-Dimensional Electron Gas. [PDF]

ACS Appl Mater Interfaces
Bisignano I, Imura M, Tanjaya NK, Ye MJ, Okada N, Ishii S.   +5 more
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Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]

Materials (Basel)
Weis M.
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Influence of LPCVD-Si₃N₄ Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel)
Jiang G, Li W, Luo X, Liu Y, Fu C, Zhang Q, Zhang G, Lin Z, Cui P.   +8 more
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
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Cavity-mediated coupling between local and nonlocal modes in Landau polaritons. [PDF]

Nanophotonics
Endo SR, Kim D, Liang S, Liang S, Lee G, Kim S, Covarrubias-Morales A, Seo M, Manfra MJ, Lee D, Bamba M, Kono J.   +11 more
europepmc   +1 more source