Results 121 to 130 of about 1,511 (138)

2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2022
Vishal Goyal, Rajan Singh, Truong Khang Nguyen   +2 more
exaly  

Observation of inverse Edelstein effect in Rashba-split 2DEG between SrTiO 3 and LaAlO 3 at room temperature

Science Advances, 2017
Wei Yuan, Wei Han, Qi Song
exaly  

How to extract the surface potential profile from the ARPES signature of a 2DEG

Journal of Electron Spectroscopy and Related Phenomena, 2018
Roland Koch, Luca Moreschini, Chris Józwiak   +2 more
exaly  

High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures

Journal of Electronic Materials, 2006
Y D Zheng, Zheng Y D, Chen D J
exaly  

Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

Microelectronic Engineering, 2019
Matthew Charles, Charles Leroux, G Reimbold   +2 more
exaly  

Quantum confinement effect on 2DEG in InGaN/InN HEMT with an interfacial layer

Physica Status Solidi C: Current Topics in Solid State Physics, 2011
Ashraful G Bhuiyan
exaly  

Modeling the Influence of the Acceptor-Type Trap on the 2DEG Density for GaN MIS-HEMTs

IEEE Transactions on Electron Devices, 2020
Yijun Shi, Xiaorui Xu, Bo Zhang
exaly  

Numerical investigation of the 2DEG properties of AlGaN/AlN/GaN HEMT structures with InGaN/GaN MQW back-barrier structure

Physica E: Low-Dimensional Systems and Nanostructures, 2015
G Atmaca, S B Lisesivdin
exaly  

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Electronics (Switzerland), 2018
Quanbin Zhou, Jian Qin, Liao Biyan
exaly  

Non‐Volatile Control of 2DEG Conductivity at Oxide Interfaces

Advanced Materials, 2013
Kim Jin-Sang, Seong Keun Kim, Min Gyu Kang   +2 more
exaly