Results 121 to 130 of about 4,873 (226)

Experimental Evidence of Electron‐enhanced Interfacial Thermal Conductance Through Two‐Dimensional Electron Gas

Advanced Electronic Materials
It has been a persistent challenge to experimentally distinguish the contribution of electron‐phonon coupling on interfacial thermal conductance from phonon‐dominated pathways.
Xing Fan, Yi Tao, Wangwei Zhang, Chen Li, Bingxin Li, Ziyuan Ma, Zhiming Geng, Xue‐Jun Yan, Ming‐Hui Lu, Di Wu, Deyu Li, Hong Lu, Yan‐Feng Chen   +12 more
doaj   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Nanoheterointerface 2DEG Photodynamics Effective Qubit

Article Hyperlink 
openaire   +2 more sources

Electric-Field Tunable Anisotropic <i>g</i>-Factor Induced by Spin Pumping. [PDF]

Nano Lett
Shao J, Kronseder M, Guo J, Mangold M, Pan D, Meier TNG, Zhao W, Zhao J, Back CH, Chen L.   +9 more
europepmc   +1 more source

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc   +1 more source

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]

Materials (Basel)
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc   +1 more source

Electronic Journal of Theoretical Physics Transport Properties of Thermal Shot Noise Through Superconductor-Ferromagnetic /2DEG Junction

, 2014
: We study transport properties of thermal shot noise, thermo power and thermal conductance through superconductor-ferromagnetic /2DEG junction under the effect of Fermi energy, number of open channels and excitation energy. Thermal shot noise, PT hermal
Adel H. Phillips, Attia A. Awad Alla
core  

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]

Light Sci Appl
Wang L, Gong S, Xia C, Liu D, Cong X, Zhu A, Zeng H, Lan F, Yang Z, Otsuji T, Zhang Y.   +10 more
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Theoretical modelling of oxide 2DEGs

Report on the study of realistic multi-orbital model hamiltonians of oxide 2DEGs, including SOC, treated by tight-binding approaches and Greens function formalism to study buk properties and optize growth parameters in T1.2.
openaire   +1 more source