Results 161 to 170 of about 17,889 (195)

Multilayered diluted magnetic semiconductor structures and 2DEG

SPIE Proceedings, 2005
The 2DEG adjacent to a diluted magnetic semiconductor heterobarrier is altered in the presence of a magnetic field. The alteration is dependent upon at least three factors: the Zeeman energy, the self consistent potential energy and the equilibrium distribution.
H. L. Grubin, Dwight L. Woolard
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SPIN INTERFERENCE IN RASHBA 2DEG SYSTEMS

International Journal of Modern Physics B, 2008
The gate controllable SOI provides useful information about spin interference.1 Spin interference effects are studied in two different interference loop structures. It is known that sample specific conductance fluctuations affect the conductance in the interference loop.
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Electron transport in a non-planar 2DEG

Surface Science, 1996
We investigate electron transport in a spatially varying magnetic field generated by applying a uniform field to a non-planar 2DEG grown by MBE on a substrate patterned with etched facets. When a magnetic field is applied in the plane of the substrate, the resistance measured across a facet is quantised.
M.L. Leadbeater, C.L. Foden, J.H. Burroughes, T.M. Burke, L.L. Wang, M.P. Grimshaw, D.A. Ritchie, M. Pepper   +7 more
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2DEG in strained Si/SiGe heterostructures

Surface Science, 1994
Abstract Low-temperature magnetotransport properties for the recent n-type modulation-doped Si/SiGe heterostructures are reported. The biaxially tensile-stressed (100)Si surface layers on stress-relieved SiGe substrates are shown to have all the well known MOSFET characteristics but with more than an order of magnitude higher mobility.
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Metal/2DEG contact — a microscopic model

Surface Science, 1994
Abstract A model for a metal contact to a high mobility 2DEG is considered. The model takes into account strong elastic and inelastic electron scattering in the metal and the difference in Fermi surfaces of the metal and of the 2DEG. The thermalization probability for an electron which is incident on the contact is calculated.
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Ultrafast spin evolution in high-mobility 2DEGs

Physica E: Low-dimensional Systems and Nanostructures, 2003
Abstract We describe optical measurements of electron spin dynamics in a high-mobility n-doped GaAs/AlGaAs quantum well which test the customary assumptions of the D'yakonov, Perel’ and Kachorovskii mechanism of electron spin relaxation. At 1.8 K , spin evolution is oscillatory indicating breakdown of collision-dominated relaxation. At higher
Harley, R.T., Brand, M.A., Malinowski, A., Karimov, O.Z., Marsden, P.A., Shields, A.J., Sanvitto, D., Ritchie, D.A., Simmons, M.Y.   +8 more
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Negative magneto-drag of double layer 2DEGs

Physica E: Low-dimensional Systems and Nanostructures, 2002
We present friction measurements (drag) between two 2DEGs in a magnetic field in the integer quantum Hall regime. At matched densities, the double peak in the drag that occurs when the longitudinal resistances of each 2DEG do not show any sign of spin splitting is observed.
Lok, J., Kraus, S., Dietsche, W., von Klitzing, K., Schwerdt, F., Hauser, M., Wegscheider, W., Bichler, M.   +7 more
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Nanoheterointerface 2DEG Photodynamics Effective Qubit

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SPIN RELATED TRANSPORT IN RASHBA 2DEG SYSTEMS

International Journal of Modern Physics B, 2008
Transport in mesoscopic conductors is determined not only by orbital motion of carriers but also by quantum interference effect. However, it is well known that the quantum interference such as weak localization is much modified in the presence of spin-orbit interaction (SOI), leading to weak anti-localization.
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2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Microelectronic Engineering, 2021
Md. Abdul Kaium Khan, Prof Mohammad Abdul Alim, Christophe Gaquiere   +2 more
exaly