Results 171 to 180 of about 4,873 (226)

Auger Electron Spectroscopy for Chemical Analysis of Passivated (Al,Ga)N-Based Systems. [PDF]

Micromachines (Basel)
Domanowska A, Adamowicz B.
europepmc   +1 more source

Tunable vacuum-field control of fractional and integer quantum Hall phases. [PDF]

Nature
Enkner J, Graziotto L, Boriçi D, Appugliese F, Reichl C, Scalari G, Regnault N, Wegscheider W, Ciuti C, Faist J.   +9 more
europepmc   +1 more source

Active and integrated electronic metadevices for future telecommunication circuits. [PDF]

Commun Eng
Samizadeh Nikoo M, Chu C, Lin B, Liu Y, Kim Y, Wang H.   +5 more
europepmc   +1 more source

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Modification of a shallow 2DEG by AFM lithography

Microelectronic Engineering, 2001
A conducting tip of an atomic force microscope (AFM) is used to induce ultra-small oxide patterns on metallic (Ti) thin film and semiconducting (GaAs) surfaces. The oxide is used to deplete a shallow two-dimensional electron gas (2DEG) formed at a GaAs/AlGaAs interface, 274 A beneath the surface.
D A Ritchie, G A C Jones
exaly   +2 more sources

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Microelectronic Engineering, 2021
International audienceFor the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial.
Md Abdul Kaium Khan, Mohammad Abdul Alim, C Gaquiere   +2 more
exaly   +2 more sources

Space Charge Waves in A 2DEG

2021 IEEE International Conference on Plasma Science (ICOPS), 2021
The interaction of two-dimensional electron gas (2DEG) in a solid-state heterostructure with a surrounding slow wave circuit holds the potential for high power THz generation and amplification. The dense 2DEG formed at material interfaces will provide an ideally confined beam of high-density electrons, where problems pertinent to the vacuum electron ...
Peng Zhang, Patrick Wong, John Albrecht, Matt Hodek, David Smithe   +4 more
openaire   +1 more source

Numerical investigation of the 2DEG properties of AlGaN/AlN/GaN HEMT structures with InGaN/GaN MQW back-barrier structure

Physica E: Low-Dimensional Systems and Nanostructures, 2015
The calculations of the two-dimensional electron gas (2DEG) properties of pseudomorphic Al0.15Ga0.85N/AlN/GaN/(InyGa1-yN/GaN)MQW/Al0.15Ga0.85N/AlN/GaN heterostructures are presented.
G Atmaca, S B Lisesivdin
exaly   +2 more sources

RESPONSE OF A 2DEG TO MICROWAVE IRRADIATION

International Journal of Modern Physics B, 2007
In this paper, we study the behavior of a high mobility two dimensional electron gas under microwave irradiation by means of magneto-photoluminescence (PL) and absorption measurements. The high mobility sample investigated is a 15nm wide GaAs/AlGaAs quantum well with an electron concentration between 1-2×1011 cm -2, tunable by visible-light ...
Moreau, S., Fedorych, O. M., Sadowski, M. L., Potemski, V., Studenikin, Sergei, Austin, G., Sachrajda, A. S., Saku, T., Hariama, Y.   +8 more
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Quantum resistance standards with double 2deg

IEEE Transactions on Instrumentation and Measurement, 2003
We have developed a new generation of quantum Hall array resistance standards (QHARS) obtained from GaAs/AlGaAs heterostructures with double two-dimensional electron gases (2DEGs) grown by the metal-organic vapor phase epitaxy process. We have achieved the fabrication of such a multilayer system with well matched carrier density and mobility of the two
A. Bounouh, Wilfrid Poirier, François P. M. Piquemal, Gérard Genevès, J. P. André   +4 more
openaire   +1 more source