Results 151 to 160 of about 1,561 (188)

Diffusion thermopower of a 2DEG

Journal of Physics: Condensed Matter, 1991
The authors investigate the effect of the background impurity concentration NBI on the thermopower of a GaAs/AlGaAs heterojunction. A comparison between a GaAs/AlGaAs heterojunction and a Si MOSFET is also given. For the heterojunction the authors always find a negative sign for the thermopower, in contrast to the Si MOSFET for which the sign sometimes
V C Karavolas, P N Butcher
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A novel InGaAs Schottky-2DEG diode

1993 (5th) International Conference on Indium Phosphide and Related Materials, 2002
The preparation and properties of planar pseudomorphic InGaAs Schottky two-dimensional electron gas (2DEG) diodes are described. Single- and double-barrier diodes were prepared on metal-organic vapor phase epitaxial (MOVPE) grown modulation doped FET (MODFET)-like structures.
MARSO, Michel, Kordoš, P., Fox, A., Meyer, R., Hardtdegen, H., Lüth, H.   +5 more
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Trion states in a dense 2DEG

physica status solidi c, 2009
AbstractPhotoluminescence spectra taken from modulationdoped CdTe/(Cd0.7Mg0.3)Te quantum well structures with a two‐dimensional electron gas of moderate to high density (from ne ∼ 1010 up to ne ∼ 1012 cm–2) in magnetic fields from 0 T to 45 T were studied. The observed spectra were analyzed in terms of combined excitonelectron processes.
V. P. Kochereshko, A. A. Klochikhin, S. A. Crooker, G. Karczewski, J. Kossut   +4 more
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Magnetotransport in 2DEG with magnetic barriers

Physica E: Low-dimensional Systems and Nanostructures, 2002
We have studied the transport in 2DEG subjected to two different types of magnetic barrier. Excess resistivities due to those magnetic barriers increase as T2. The resistance as a function of the uniform component of the magnetic field exhibits a positive magnetoresistance and a beating pattern of the Shubnikov–de Haas oscillations.
Masahiro Hara, Akira Endo, Shingo Katsumoto, Yasuhiro Iye   +3 more
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Plasmons on Laterally Drifting 2DEGs

1993
The plasmon modes of a two dimensional electron gas (2DEG) formed at a semiconductor heterojunction or in a quantum well have received much attention over the past few years.
H. P. Hughes, R. E. Tyson, L. C. Ó. Súilleabháin, R. J. Stuart   +3 more
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On optical gain mechanisms in a 2DEG photodetector

Proceedings of the 2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference. (Cat. No.01TH8568), 2002
Discusses the gain mechanisms in an optical detector based on a modulation doped heterojunction. It is shown that, in this gate-less HEMT device, varying the density of the mobile electron gas produces large differences in optical responsivity. The observed behavior is explained on the basis of a internal variation of the Fermi level, similar to a ...
Nabet B, Romero MA, Cola A, Quaranta F, Cesareo M   +4 more
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Quantum capacitance measurement of 2DEG

2020
Two-dimensional electron gas has various novel properties. This kind of electronic system like two-dimensional semiconducting transition metal dichalcogenides (TMDCs) and graphene are discovered with novel physical phenomena like valley Hall effect, Ising superconductivity and circular dichroism etc. In this thesis, the negative capacitance and inverse
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Persistent currents in meoscopic 2DEG rings

Czechoslovak Journal of Physics, 1996
We performed measurements of the magnetic response of a single mesoscopic ring made of a GaAlAs/GaAs heterojunction (2 DEG). We detected a magnetic signal, with a period h/e, which is an evidence, of persistent currents. The amplitude and the sign of this signal seem to vary in time despite a stable amplitude and phase of the Aharonov-Bohm conductance ...
Geraldo Cernicchiaro, Klaus Hasselbach, Dominique Mailly, Alain Benoit   +3 more
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Improved quantization of 2DEG of p-HEMT

International Semiconductor Device Research Symposium, 2003, 2004
The heterostructure potential of a tri-gate depleted mode p-HEMT was modeled for conventional and tailored field operation conditions. The set of energy levels in quantum wells under same bias on all gates were compared with parameters of p-HEMT, when the bias on the gates are varied.
S. Gudimetta, S. Mil'shtein
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Electron transport in a non-planar 2DEG

Surface Science, 1996
We investigate electron transport in a spatially varying magnetic field generated by applying a uniform field to a non-planar 2DEG grown by MBE on a substrate patterned with etched facets. When a magnetic field is applied in the plane of the substrate, the resistance measured across a facet is quantised.
M.L. Leadbeater, C.L. Foden, J.H. Burroughes, T.M. Burke, L.L. Wang, M.P. Grimshaw, D.A. Ritchie, M. Pepper   +7 more
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