Results 61 to 70 of about 199,581 (223)

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, Volume 3, Issue 3, Page 233-267, September 2026.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

IEEE Journal of the Electron Devices Society, 2020
MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliability.
Rui Gao, Yijun Shi, Zhiyuan He, Yiqiang Chen, Yunfei En, Yun Huang, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Xuefeng Zheng, Jinfeng Zhang, Yang Liu   +11 more
doaj   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

Low Insertion‐Loss High Power X‐Band SPDT Transmit/Receive Switches in 250 nm GaN HEMT

Microwave and Optical Technology Letters, Volume 68, Issue 6, June 2026.
ABSTRACT We present three X‐band transmit/receive (T/R) switches utilizing single‐pole double‐throw (SPDT) structures in 250 nm GaN HEMT technology. The first T/R switch was designed to achieve low insertion loss by constructing the SPDT structure with a series λ/4 transmission line (T‐line) and meticulously selected two HEMT switches in parallel for ...
Tae‐Hoon Kim, Mun‐Kyo Lee, Soonyoung Hong, Jung‐Dong Park   +3 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse

Micromachines
With the growing complexity of electromagnetic environments, electronic systems suffer from prominent strong electromagnetic interference in practical service. As a key component implementing power amplification and transmission in communication systems,
Lu Sun, Haolin Wu, Jin Tian, Keke Bai
doaj   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Accelerating Full‐Wave Antenna Optimization: An Adaptive Surrogate‐Assisted Differential Evolution Framework

Engineering Reports, Volume 8, Issue 5, May 2026.
An adaptive surrogate‐assisted differential evolution framework integrates machine learning‐based surrogate modeling with selective full‐wave electromagnetic validation to accelerate antenna optimization. A CST–Python workflow combines Latin‐hypercube sampling, cross‐validated model selection, and iterative dataset refinement to guide the search toward
Muhammad Farooq, Shahid Bashir, Mohammad Haseeb Zafar, Ruhul Amin Khalil   +3 more
wiley   +1 more source

Kilo‐Volt Class Al0.65Ga0.35N Channel Metal Insulator Semiconductor HEMTs With >300MW/cm2 Baliga Figure of Merit on Sapphire Substrate

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 5, May 2026.
Passivated Al‐rich AlGaN channel metal insulator semiconductor HEMTs on sapphire demonstrate breakdown voltages exceeding 2 kV with average electric fields above 1.3 MV/cm. A peak Baliga figure of merit of 325 MW/cm2 is achieved, representing a significant improvement over prior reports.
Khush Gohel, Swarnav Mukhopadhyay, Md Tahmidul Alam, Jiahao Chen, Surjava Sanyal, Ruixin Bai, Guangying Wang, Shubhra Pasayat, Chirag Gupta   +8 more
wiley   +1 more source