Results 61 to 70 of about 14,573 (221)

125 - 211 GHz low noise MMIC amplifier design for radio astronomy [PDF]

, 2019
To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used.
Cleary, Kieran, Fuller, Gary A., George, Danielle, Lai, Richard, McGenn, William, Mei, Gerry, Readhead, Anthony, White, Daniel   +7 more
core   +2 more sources

Oxygen‐Regulated GaN‐Based Sensors Fabricated by MOCVD for Switchable Gas Detection: Exhaled Gas Smart Platform for Non‐Invasive Disease Detection

Advanced Science, Volume 13, Issue 7, 3 February 2026.
This work presents highly consistent GaN‐based thin‐film gas sensors prepared by MOCVD for non‐invasive breath analysis. The sensors exhibit tunable selectivity from oxidizing to reducing gases by incorporating In composition, ultra‐low detection limits and humidity resistance.
Yuxuan Wang, Dan Han, Qi Duan, Zhekai Zhang, Zhengyang Jia, Juxu Guang, Guojing Wang, Weidong Wang, Xiuli He, Shengbo Sang   +9 more
wiley   +1 more source

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

, 2015
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy.
Ganguly, Satyaki, Hu, Zongyang, Jena, Debdeep, Li, Guowang, Mintairov, Alexander, Protasenko, Vladimir, Qi, Meng, Song, Bo, Verma, Jai, Xing, Huili Grace, Yan, Xiaodong, Zhao, Pei, Zhu, Mingda   +12 more
core   +1 more source

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

IEEE Journal of the Electron Devices Society, 2020
MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliability.
Rui Gao, Yijun Shi, Zhiyuan He, Yiqiang Chen, Yunfei En, Yun Huang, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Xuefeng Zheng, Jinfeng Zhang, Yang Liu   +11 more
doaj   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

When self-consistency makes a difference [PDF]

, 2008
Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits.
Bonani, Fabrizio, Camarchia, Vittorio, Cappelluti, Federica, Donati Guerrieri, Simona, Ghione, Giovanni, Pirola, Marco   +5 more
core   +1 more source

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger, Deik Dasenbrook, Niklas Kyoushi, Roberto Guido, Adrian Petraru, Thomas Mikolajick, Uwe Schröder, Hermann Kohlstedt, Simon Fichtner   +8 more
wiley   +1 more source

GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications [PDF]

, 2016
This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance.
Eblabla, Abdalla, Elgaid, Khaled, Guiney, Ivor, Li, Xu, Wallis, David J.   +4 more
core  

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions [PDF]

, 2017
The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V.
Acanski M., Chen Z., Chinthavali M., Friedrichs P., Li K., Li K., Li K., Mousa R., Schülting P., Srdic S., Ueda D., Wang J., Wu H.   +12 more
core   +2 more sources

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates (Adv. Electron. Mater. 3/2026)

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Single‐Crystal AlN Substrates In their Research Article (10.1002/aelm.202500393), Eungkyun Kim, Debdeep Jena, Huili Grace Xing, and co‐workers demonstrate single‐crystal high electron mobility transistors (XHEMTs) on bulk AlN substrates for the first time, delivering exceptional RF performance.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source