Results 61 to 70 of about 843 (137)

Electronic Transport in AlGaN/GaN Nanowires Under Ultraviolet Excitation and Edge Depletion Effect, Studied in a Wide Temperature Range

Nano Select, Volume 7, Issue 2, February 2026.
Electronic transport in AlGaN/GaN nanowires (NW) was studied under ultraviolet excitation in a wide temperature range. Significant changes in the conductivity of the structures were revealed and explained by the modulation of the space charge limited current (SCLC) effect. Temperature‐dependent measurements of transport and noise properties using noise
Svetlana Vitusevich, Vladislav V. Kaliuzhnyi, Mykola D. Tymochko, Alexander E. Belyaev   +3 more
wiley   +1 more source

Performances of AlGaN/GaN HEMTs in Planar Technology

, 2004
The advantage of planar technology for the AlGaN/GaN HEMTs realization is demonstrated in this paper. A breakdown voltage closed to 100 V and an output power density of 4 W/mm at 4 GHz have been measured on a 2x25x1.5 µm² HEMT on sapphire substrate.
Werquin, M., Vellas, N., Guhel, Y., Ducatteau, D., Boudart, B., Pesant, J.C., Bougrioua, Z., Germain, Marie, de Jaeger, Jean-Claude, Gaquière, Christophe   +9 more
openaire   +3 more sources

Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

IEEE Access
An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 °C and 125 °C.
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Norhawati Ahmad, Muammar Mohamad Isa, Alhan Farhanah Abd Rahim, Khaled Ahmeda   +5 more
doaj   +1 more source

Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications

Journal of Science: Advanced Materials and Devices, 2019
In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric.
Touati Zine-eddine, Hamaizia Zahra, Messai Zitouni   +2 more
doaj   +1 more source

Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

Micromachines
Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the ...
Chenbi Li, Xinghuan Chen, Zeheng Wang
doaj   +1 more source

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

IEEE Journal of the Electron Devices Society, 2018
Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated.
Kwang Hong Lee, Yue Wang, Bing Wang, Li Zhang, Wardhana Aji Sasangka, Shuh Chin Goh, Shuyu Bao, Kenneth E. Lee, Eugene A. Fitzgerald, Chuan Seng Tan   +9 more
doaj   +1 more source

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Micromachines
With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field.
Pengfei Dai, Shaowei Wang, Hongliang Lu
doaj   +1 more source

Recent Advancements in N-polar GaN HEMT Technology

Crystals
N-polar GaN HEMT technology has emerged as a disruptive technology that outperforms Ga-polar GaN HEMTs in terms of high-frequency power amplification capability.
Emre Akso, Kamruzzaman Khan, Henry Collins, Boyu Wang, Robert Hamwey, Tanmay Chavan, Christopher Clymore, Weiyi Li, Oguz Odabasi, Matthew Guidry, Stacia Keller, Elaheh Ahmadi, Steven P. DenBaars, Umesh Mishra   +13 more
doaj   +1 more source

AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform

AIP Advances, 2018
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo, Jin-Hyeok Jeon, Yumin Koh, Chu-young Cho, Hyeong-Ho Park, Kyung-Ho Park, Sang Woon Lee, Won-Ju Cho   +7 more
doaj   +1 more source

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation

Scientific Reports
A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Kang Hee Lee, Yeonsil Yang, Junseok Heo, Jang Hyun Kim   +3 more
doaj   +1 more source