Results 81 to 90 of about 7,995 (228)
Scaled GaN-HEMT Large-Signal Model Based on EM Simulation
, 2020 This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit.
Seokgyu Choi +7 more
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Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications
Journal of Science: Advanced Materials and Devices, 2019 In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric.
Touati Zine-eddine +2 more
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MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
, 2006 AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition.
Li Jianping +11 more
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GaN hemt aygıtlarda çift katmanlı Si3N4 dielektrik tabakasının elektriksel özellikleri
, 2023 GaN HEMT teknolojisi; yüksek elektron hareketliliği, yüksek kırılma gerilimi gibi özellikleri nedeni ile günümüzde yeni nesil yüksek güç ve yüksek frekans uygulamalarında en önde yer almaktadır.
Yıldırım DURMUŞ
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Анализ параметров GaN-HEMT до и после гамма-нейтронного воздействия
, 2017 Предложен метод математической обработки результатов измерений вольт-фарадных характеристик HEMT AlGaN/GaN до и после gamma-нейтронного облучения с флюенсом 0.4·1014 cм-2.
C.B. Оболенский +4 more
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MicromachinesDue to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the ...
Chenbi Li, Xinghuan Chen, Zeheng Wang
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Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process
IEEE Journal of the Electron Devices Society, 2018 Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated.
Kwang Hong Lee +9 more
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, 2011 随着高压开关和高速射频电路的发展，增强型GaN基高电子迁移率晶体管(HEMT)成为该领域内的研究热点。增强型GaN基HEMT只有在加正栅压才有工作电流，可以大大拓展该器件在低功耗数字电路中的应用。近年来，国内外对增强型GaN基HEMT阈值电压的研究主要集中以下两个方面: 在材料生长方面，通过生长薄势垒、降低Al组分、生长无极化电荷的 AIGaN/GaN异质材料、生长InGaN或p-GaN盖帽层，来控制二维电子气浓度; 在器件工艺方面，采用高功函数金属、MIS结构、刻蚀凹栅、F基等离子体处理 ...
颜伟 +6 more
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Trapping and leakage mechanisms in GaN devices
, 2022 reservedIn questo lavoro intendiamo discutere i risultati riguardo l'instabilità della tensione di soglia e i fenomeni di leakage su HEMT con struttura di gate p-GaN/AlGaN/GaN.
BENATO, ANDREA
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Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors
MicromachinesWith the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field.
Pengfei Dai, Shaowei Wang, Hongliang Lu
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