Results 81 to 90 of about 199,581 (223)
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
, 2006 AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition.
Li Jianping +11 more
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Scaled GaN-HEMT Large-Signal Model Based on EM Simulation
, 2020 This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit.
Seokgyu Choi +7 more
core +1 more source
Analytical Modeling of GaN-HEMT Considering Finite Width of Two-Dimensional Electron Gas [PDF]
AUT Journal of Electrical EngineeringIn this work, we present an analytical DC model for the Gallium Nimtide High Electron Mobility Transistor by taking into account the finite width of the two-dimensional electron gas (2DEG) layer.
Behnam Jafari Touchaei, Majid Shalchian
doaj +1 more source
Modeling and Sensitivity Analysis of GaN HEMT Biosensor
BiosensorsGallium nitride (GaN) high-electron-mobility transistor (HEMT) biosensors have recently emerged as promising platforms for highly sensitive and label-free detection of biomolecules. Their exceptional electrical properties, including high carrier mobility,
Ashkhen Yesayan, Jean-Michel Sallese
doaj +1 more source
Physics-Based Compact Model for p-GaN/AlGaN/GaN. Application: Understanding of Degradation After Gamma-Ray Irradiation [PDF]
, 2022 This thesis explores the nature of gallium nitride devices from the point of view of compact modeling paying particular attention to power electronic application.
Modolo, Nicola
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Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications
Journal of Science: Advanced Materials and Devices, 2019 In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric.
Touati Zine-eddine +2 more
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Performances of AlGaN/GaN HEMTs in Planar Technology
, 2004 The advantage of planar technology for the AlGaN/GaN HEMTs realization is demonstrated in this paper. A breakdown voltage closed to 100 V and an output power density of 4 W/mm at 4 GHz have been measured on a 2x25x1.5 µm² HEMT on sapphire substrate.
Werquin, M. +9 more
openaire +3 more sources
, 2011 随着高压开关和高速射频电路的发展，增强型GaN基高电子迁移率晶体管(HEMT)成为该领域内的研究热点。增强型GaN基HEMT只有在加正栅压才有工作电流，可以大大拓展该器件在低功耗数字电路中的应用。近年来，国内外对增强型GaN基HEMT阈值电压的研究主要集中以下两个方面: 在材料生长方面，通过生长薄势垒、降低Al组分、生长无极化电荷的 AIGaN/GaN异质材料、生长InGaN或p-GaN盖帽层，来控制二维电子气浓度; 在器件工艺方面，采用高功函数金属、MIS结构、刻蚀凹栅、F基等离子体处理 ...
颜伟 +6 more
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Анализ параметров GaN-HEMT до и после гамма-нейтронного воздействия
, 2017 Предложен метод математической обработки результатов измерений вольт-фарадных характеристик HEMT AlGaN/GaN до и после gamma-нейтронного облучения с флюенсом 0.4·1014 cм-2.
C.B. Оболенский +4 more
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MicromachinesDue to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the ...
Chenbi Li, Xinghuan Chen, Zeheng Wang
doaj +1 more source