Results 81 to 90 of about 14,573 (221)
Open-gated ph sensor fabricated on an undoped-algan/gan hemt structure [PDF]
, 2011 The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated.
Zainal Abidin, Mastura Shafinaz +4 more
core +1 more source
Advanced Science, Volume 13, Issue 3, 14 January 2026.This study demonstrates a TiN/HfO2/ITO memristor exhibiting field‐induced bimodal volatile switching behavior originating from ion bombardment during sputtering. The dipole‐driven, polarity‐dependent states produce multilevel output responses that expand the reservoir's output dimensionality and enhance encoding diversity.
Yuseong Jang +4 more
wiley +1 more source
Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier [PDF]
, 2013 In this paper, implementation and testing of non- commercial GaN HEMT in a simple buck converter for envelope amplifier in ET and EER transmission techn iques has been done.
Alou Cervera, Pedro +11 more
core
Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship
Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi +2 more
wiley +1 more source
Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE [PDF]
, 1999 The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers and as a function of III/V flux ratio. Films are grown on sapphire substrates by molecular beam epitaxy using a radio frequency nitrogen plasma ...
Beach, R. A. +3 more
core +1 more source
Analysis and Design of a DC‐to‐24 GHz Compact High‐Speed Inductor‐less SPDT Switch
Electronics Letters, Volume 62, Issue 1, January/December 2026.ABSTRACT A compact DC‐to‐24 GHz single‐pole, double‐throw switch with enhanced isolation, low insertion loss and high‐speed performance, by adopting a multiple series‐shunt structure, has been presented in this letter. The mechanism of multiple series‐shunt structures of the switch on isolation and insertion loss are analysed. To verify the feasibility,
Jiashu Guo +3 more
wiley +1 more source
A 2GHz GaN Class-J power amplifier for base station applications [PDF]
, 2011 The design and implementation of a high efficiency Class-J power amplifier (PA) for base station applications is reported. A commercially available 10 W GaN HEMT device was used, for which a large-signal model and an extrinsic parasitic model were ...
McGeehan, JP, Mimis, K, Morris, KA
core +2 more sources
Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.In this letter, a highly efficient and wideband power amplifier (PA) is proposed based on resistive–resistive series of continuous modes (Res‐Res SCMS) with a new microstrip low‐pass filter (LPF). By employing a conventional real‐to‐real impedance transformer, the output and input matching networks are realized by incorporating the transistor′s ...
Minshi Jia +7 more
wiley +1 more source
, 2017 The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors.
Li, Xiang(李想) +9 more
core +1 more source
Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters [PDF]
, 2016 In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance).
Blaabjerg, Frede +4 more
core +4 more sources