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ASM-HEMT: Compact model for GaN HEMTs
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely ...
Avirup Dasgupta +3 more
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Traps localization and analysis in GaN HEMTs
Microelectronics Reliability, 2014Abstract A simple experimental technique aimed at the spatial localization of the dominant trap states involved in drain current dispersion in GaN HEMTs will be presented. By analyzing the dependence of current dispersion from the gate voltage base-line ( V Gbl ) used in double pulse I – V measurements it is possible to observe a different trend ...
A. Chini +4 more
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2010
Thermal effects were investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of AlGaN/GaN HEMTs This is implemented by solving simultaneously the acoustic and optical phonon energy balance equations and also takes into account the coupling of the two subsystems The electro-thermal device ...
Dragica Vasileska +3 more
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Thermal effects were investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of AlGaN/GaN HEMTs This is implemented by solving simultaneously the acoustic and optical phonon energy balance equations and also takes into account the coupling of the two subsystems The electro-thermal device ...
Dragica Vasileska +3 more
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2011
A review of nitride-based HEMT technology, beginning with substrate considerations and moving to crystal growth, device processing, packaging, and finally to products. The final section introduces important areas anticipated for future GaN HEMT development: InAlN HEMTs, GaN-on-diamond, and heterointegration.
Wayne Johnson, Edwin L. Piner
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A review of nitride-based HEMT technology, beginning with substrate considerations and moving to crystal growth, device processing, packaging, and finally to products. The final section introduces important areas anticipated for future GaN HEMT development: InAlN HEMTs, GaN-on-diamond, and heterointegration.
Wayne Johnson, Edwin L. Piner
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The Tenth International Conference on Advanced Semiconductor Devices and Microsystems, 2014
The operation of GaN tri-gate HEMTs is investigated by numerical device simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN body and to a lesser extent on the body height. The body height becomes more important as the gate length is reduced.
M Alsharef +6 more
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The operation of GaN tri-gate HEMTs is investigated by numerical device simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN body and to a lesser extent on the body height. The body height becomes more important as the gate length is reduced.
M Alsharef +6 more
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UNSTRAINED InAlN/GaN HEMT STRUCTURE
International Journal of High Speed Electronics and Systems, 2004InAlN has been investigated as barrier layer material for GaN -HEMT structures, potentially offering higher sheet charge densities [1] and higher breakdown fields [2]. Lattice matched growth of the barrier layer can be achieved with 17 % In content, avoiding piezo polarization.
M. Neuburger +11 more
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Stable high power GaN-ON-GaN HEMT
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004., 2004High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an
K. K. CHU, P. C. CHAO, J. A. WINDYKA
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Investigation on the thermal behavior of microwave GaN HEMTs
Solid-State Electronics, 2011Abstract The investigation of the DC and microwave characteristics versus the ambient temperature is a key issue for active solid-state devices, since the operating temperature can strongly affect not only the transistor performance but also its lifetime to failure.
CRUPI, GIOVANNI +6 more
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Survivability of AlGaN/GaN HEMT
2007 IEEE/MTT-S International Microwave Symposium, 2007Using harmonic balance simulations, we have examined the survivability limiting mechanisms of a 0.2 mum T-gate AlGaN/GaN HEMT device under RF overdrive. Simulations are performed using a 4-finger 200 mum AlGaN/GaN HEMT device model. Two catastrophic failure mechanisms are identified. At low quiescent drain-source voltages (
Yaochung Chen +8 more
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