Results 101 to 110 of about 199,581 (223)

Trapping and leakage mechanisms in GaN devices

, 2022
reservedIn questo lavoro intendiamo discutere i risultati riguardo l'instabilità della tensione di soglia e i fenomeni di leakage su HEMT con struttura di gate p-GaN/AlGaN/GaN.
BENATO, ANDREA
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Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

, 2008
AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the
Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: yuntianbb@hotmail.com, Wang, CM, Ran, JX, Liu, HX, Chen, YL, Li, JM, Xiao, HL, Li, JP, Luo, WJ, Wang, XL, Yang, FH, Guo, LC   +11 more
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A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design

, 2008
We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate.
Chen Zhigang, Zhang Renping, Yang Fuhua, Li Jinmin, Luo Weijun, Wang Xiaoliang, Zhang Yang   +6 more
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Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

, 2010
AlGaN/GaN heterostructure devices are capable of delivering high-frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies. Primarily
Zhou, Chunhua, Kevin J. Chen, Chen, Kevin J., Chunhua Zhou   +3 more
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AlN/GaN HEMT Technology with In-situ SiNx Passivation

, 2015
We report on the fabrication of low resistance Ohmic contacts on AlN/GaN HEMT material terminated with in-situ SiNx. The AlN/GaN material was grown on SiC substrate using metal organic chemical vapor deposition (MOCVD), and employs a 5nm in-situ SiNx ...
Ata Khalid, Edward Wasige, Wasige, Edward, Khalid, Ata, Al-Khalidi, Abdullah, Abdullah Al-Khalidi   +5 more
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Non-gold ohmic contact for GaN-on-Si HEMT

, 2023
High power high frequency HEMT transistors are transistors that run at high frequency (100 kHz and above) for high-speed switching and high-power delivering applications. Kinds of III-V semiconductor materials have been studied to be applied to HEMT like
Zhuang, Yihao
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Simplified EPFL GaN HEMT Model

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology
Jazaeri, Farzan, Rassekh, Amin, Shalchian, Majid, Sallese, Jean-Michel, Parvais, Bertrand, Yesayan, Ashkhen, Mangla, Anurag   +6 more
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Computational-fitting method for mobility extraction in GaN HEMT. [PDF]

RSC Adv, 2023
Chang KC, Feng X, Liu H, Liu K, Lin X, Li L.   +5 more
europepmc   +1 more source

具有场板结构的AlGaN／GaN HEMT的直流特性

, 2008
研制成功具有场板结构的AlGaN／GaN HEMT器件，对源场板、栅场板器件的性能进行了分析．场板的引入减小了器件漏电和肖特基漏电，提高了肖特基反向击穿电压．源漏间距4μm的HEMT的击穿电压由常规器件的65V提高到100V以上，肖特基反向漏电由37μA减小到5．7μA，减小了一个量级．肖特基击穿电压由常规结构的78V提高到100V以上．另外 ...
魏珂, 和致经, 吴德馨, 刘新宇
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A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology. [PDF]

Sensors (Basel), 2023
Kim JG, Baek D.
europepmc   +1 more source