Results 101 to 110 of about 14,573 (221)

GaN-HEMT Performance Enhancement

Journal of Electrical Systems
In this work, a simulation analysis and calibration are carried out to improve the performance of AlGaN/GaN- MOSHEMTs (Metal-Oxide Semiconductor High Electron Mobility Transistors). The effect of the AlGaN layer thickness, gate length, Al mole fraction, and the interface traps on the electrical performance of the device has been presented.
openaire   +1 more source

Polarization fields in nitride nanostructures: ten points to think about

, 1999
Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces, have a ...
Ambacher, Ambacher, Bernardini, Bernardini, Bernardini, Bernardini, Bernardini, Burns, Bykhovski, Chichibu, Della Sala, Di Carlo, Fabio Bernardini, Fiorentini, Gil, Im, King-Smith, Kodozoy, Langer, Lefebvre, Oberhuber, Peng, Resta, Shimada, Takeuchi, Vanderbilt, Vincenzo Fiorentini, Yu   +27 more
core   +1 more source

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Micromachines
With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field.
Pengfei Dai, Shaowei Wang, Hongliang Lu
doaj   +1 more source

Recent Advancements in N-polar GaN HEMT Technology

Crystals
N-polar GaN HEMT technology has emerged as a disruptive technology that outperforms Ga-polar GaN HEMTs in terms of high-frequency power amplification capability.
Emre Akso, Kamruzzaman Khan, Henry Collins, Boyu Wang, Robert Hamwey, Tanmay Chavan, Christopher Clymore, Weiyi Li, Oguz Odabasi, Matthew Guidry, Stacia Keller, Elaheh Ahmadi, Steven P. DenBaars, Umesh Mishra   +13 more
doaj   +1 more source

AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform

AIP Advances, 2018
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo, Jin-Hyeok Jeon, Yumin Koh, Chu-young Cho, Hyeong-Ho Park, Kyung-Ho Park, Sang Woon Lee, Won-Ju Cho   +7 more
doaj   +1 more source

Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs

, 2019
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain.
Dolmanan, Surani B., Kumar, Sandeep, Muralidharan, Rangarajan, Nath, Digbijoy N., Tripathy, Sudhiranjan   +4 more
core   +1 more source

Computational-fitting method for mobility extraction in GaN HEMT. [PDF]

RSC Adv, 2023
Chang KC, Feng X, Liu H, Liu K, Lin X, Li L.   +5 more
europepmc   +1 more source

A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology. [PDF]

Sensors (Basel), 2023
Kim JG, Baek D.
europepmc   +1 more source

Simplified EPFL GaN HEMT Model

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior.
Jazaeri, Farzan, Shalchian, Majid, Yesayan, Ashkhen, Rassekh, Amin, Mangla, Anurag, Parvais, Bertrand, Sallese, Jean-Michel   +6 more
openaire   +2 more sources

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source