Results 101 to 110 of about 7,995 (228)

A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design

, 2008
We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate.
Chen Zhigang, Zhang Renping, Yang Fuhua, Li Jinmin, Luo Weijun, Wang Xiaoliang, Zhang Yang   +6 more
core  

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

, 2010
AlGaN/GaN heterostructure devices are capable of delivering high-frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies. Primarily
Zhou, Chunhua, Kevin J. Chen, Chen, Kevin J., Chunhua Zhou   +3 more
core   +1 more source

Non-gold ohmic contact for GaN-on-Si HEMT

, 2023
High power high frequency HEMT transistors are transistors that run at high frequency (100 kHz and above) for high-speed switching and high-power delivering applications. Kinds of III-V semiconductor materials have been studied to be applied to HEMT like
Zhuang, Yihao
core  

具有场板结构的AlGaN／GaN HEMT的直流特性

, 2008
研制成功具有场板结构的AlGaN／GaN HEMT器件，对源场板、栅场板器件的性能进行了分析．场板的引入减小了器件漏电和肖特基漏电，提高了肖特基反向击穿电压．源漏间距4μm的HEMT的击穿电压由常规器件的65V提高到100V以上，肖特基反向漏电由37μA减小到5．7μA，减小了一个量级．肖特基击穿电压由常规结构的78V提高到100V以上．另外 ...
魏珂, 和致经, 吴德馨, 刘新宇
core  

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

, 2007
Enhancement of the electrical properties in an AlGaN/GaN high electron mobility transistor (HEMT) structures was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer. The structures were grown on 50 mm semi-
Li HP (Li Hanping), Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn, Wang JX (Wang Junxi), Mao HL (Mao Hongling), Hu GX (Hu Guoxin), Wang ZG (Wang Zhanguo), Jinmin LM (Li Jinmin), Wang XL (Wang Xiaoliang), Ran JX (Ran Junxue), Tang H (Tang Han), Wang CM (Wang Cuimei), Ma ZY (Ma Zhiyong), Zeng YP (Zeng Yiping)   +12 more
core  

Computational-fitting method for mobility extraction in GaN HEMT. [PDF]

RSC Adv, 2023
Chang KC, Feng X, Liu H, Liu K, Lin X, Li L.   +5 more
europepmc   +1 more source

AlGaN/GaN HEMT DC Simulation [PDF]

, 2014
Increasing demand in high power and high frequency semiconductor devices has promoted the rapid development of microwave power devices using GaN and SiC.
Wang, Ruocan
core  

A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology. [PDF]

Sensors (Basel), 2023
Kim JG, Baek D.
europepmc   +1 more source

Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers

Results in Engineering
GaN HEMT has gained much interest recently because of its widespread uses, which range from high voltage systems used in power electronic devices to RF power amplifiers.
A Akshaykranth, J Ajayan, Sandip Bhattacharya, D Nirmal, Santhosh Paramasivam, Gianluca Gatto, Amit Kumar   +6 more
doaj   +1 more source

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source