Results 101 to 110 of about 843 (137)
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2018
This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
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This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
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High frequency GaN HEMT Modeling with ASM-HEMT
2022 17th European Microwave Integrated Circuits Conference (EuMIC), 2022R. Sommet +3 more
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High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021Meriem Bouchilaoun +2 more
exaly
2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
Microelectronic Engineering, 2021Md Abdul Kaium Khan +2 more
exaly
Electroluminescence in AlGaN/GaN HEMTs
2002EL distribution was measured by combining an objective lens (*100) and a CCD camera. After EL signal image was obtained in the dark, top-view image of the device was also taken under illumination. We could precisely study the EL distribution on the device by superimposing these two images.
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A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization
Energies, 2021Chih-Chiang Wu +2 more
exaly
A 5-Bit X-Band GaN HEMT-Based Phase Shifter
Electronics (Switzerland), 2021Hsuan-Ling Kao +2 more
exaly
Optimization AlGaN/GaN HEMT with Field Plate Structures
Micromachines, 2022Zhiyuan Cheng +2 more
exaly