Results 91 to 100 of about 7,995 (228)
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures
, 2006 Al0.38Ga0.62N/AIN/GaN HEMT structures have been grown by metal-organic chemical vapor deposition (MOCVD) on 2-inch sapphire substrates. Samples with AIN growth time of 0s (without AIN interlayer), 12, 15, 18 and 24s are characterized and compared.
Wang XL +6 more
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Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers [PDF]
, 2016 The thermal properties of GaN-on-diamond high electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due tothe increasing thermal ...
Pomeroy, James +6 more
core +1 more source
Recent Advancements in N-polar GaN HEMT Technology
CrystalsN-polar GaN HEMT technology has emerged as a disruptive technology that outperforms Ga-polar GaN HEMTs in terms of high-frequency power amplification capability.
Emre Akso +13 more
doaj +1 more source
AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform
AIP Advances, 2018 In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo +7 more
doaj +1 more source
, 2006 Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates.
Wang JX (Wang Junxi) +6 more
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Characterization of the hysteresis in the output capacitance of GaN HEMT power devices
embargoed_20280909Experimental research regarding the hysteresis phenomena in the output capacitance of different GaN HEMT devices with the objective of better understanding when this non ideality is dominant and if there can be possible circuital ...
DE BONI, DAMIANO
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, 2014 An AlGaN/GaN metal-oxide semiconductor (MOS) high-electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al2O3 gate dielectric films grown using atomic layer deposition.
付 凯 +7 more
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Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD
, 2008 AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the
Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: yuntianbb@hotmail.com +11 more
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Вольт-амперные характеристики hemt-транзисторов на основе GaN [PDF]
, 2017 Представлены результаты расчетов вольт-амперных характеристик HEMT-транзисторов на основе GaN. Проведено сравнение вольтамперных характеристик HEMT-транзисторов при различной толщине GaN и различных концентрациях ...
Луценко, Евгений Викторович +2 more
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AlN/GaN HEMT Technology with In-situ SiNx Passivation
, 2015 We report on the fabrication of low resistance Ohmic contacts on AlN/GaN HEMT material terminated with in-situ SiNx. The AlN/GaN material was grown on SiC substrate using metal organic chemical vapor deposition (MOCVD), and employs a 5nm in-situ SiNx ...
Ata Khalid +5 more
core +1 more source