Results 91 to 100 of about 14,573 (221)

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

Micromachines, 2019
In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to
Kyu-Won Jang, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, Hyun-Seok Kim   +5 more
doaj   +1 more source

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3

Advanced Functional Materials, Volume 35, Issue 51, December 16, 2025.
Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko, Oliver Bierwagen, Wonwoo Suh, Jeewon B. Choi, Celesta S. Chang, Kookrin Char   +5 more
wiley   +1 more source

Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

IEEE Access
An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 °C and 125 °C.
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Norhawati Ahmad, Muammar Mohamad Isa, Alhan Farhanah Abd Rahim, Khaled Ahmeda   +5 more
doaj   +1 more source

Analytical Modeling of GaN-HEMT Considering Finite Width of Two-Dimensional Electron Gas [PDF]

AUT Journal of Electrical Engineering
In this work, we present an analytical DC model for the Gallium Nimtide High Electron Mobility Transistor by taking into account the finite width of the two-dimensional electron gas (2DEG) layer.
Behnam Jafari Touchaei, Majid Shalchian
doaj   +1 more source

Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]

, 2014
Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Caesar, Markus, Croon, Jeroen, Hurkx, Godefridus, Kuball, Martin, Silvestri, Marco, Uren, Michael J, Šonský, Jan   +6 more
core   +3 more sources

Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications

Journal of Science: Advanced Materials and Devices, 2019
In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric.
Touati Zine-eddine, Hamaizia Zahra, Messai Zitouni   +2 more
doaj   +1 more source

Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

Micromachines
Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the ...
Chenbi Li, Xinghuan Chen, Zeheng Wang
doaj   +1 more source

5 Watt GaN HEMT Power Amplifier for LTE [PDF]

, 2014
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier.
Collado, A., Georgiadis, A., Niotaki, K., Vardakas, J.   +3 more
core  

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

IEEE Journal of the Electron Devices Society, 2018
Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated.
Kwang Hong Lee, Yue Wang, Bing Wang, Li Zhang, Wardhana Aji Sasangka, Shuh Chin Goh, Shuyu Bao, Kenneth E. Lee, Eugene A. Fitzgerald, Chuan Seng Tan   +9 more
doaj   +1 more source