Results 91 to 100 of about 199,581 (223)
Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT
, 2015 session posterInternational audienceIn order to optimize the Ron, we have studied the influence of epitaxy and fluorine based Si3N4 etching on the 2DEG properties of AlGaN/GaN ...
Morvan, E. +15 more
core +1 more source
Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process
IEEE Journal of the Electron Devices Society, 2018 Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated.
Kwang Hong Lee +9 more
doaj +1 more source
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures
, 2006 Al0.38Ga0.62N/AIN/GaN HEMT structures have been grown by metal-organic chemical vapor deposition (MOCVD) on 2-inch sapphire substrates. Samples with AIN growth time of 0s (without AIN interlayer), 12, 15, 18 and 24s are characterized and compared.
Wang XL +6 more
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Вольт-амперные характеристики hemt-транзисторов на основе GaN [PDF]
, 2017 Представлены результаты расчетов вольт-амперных характеристик HEMT-транзисторов на основе GaN. Проведено сравнение вольтамперных характеристик HEMT-транзисторов при различной толщине GaN и различных концентрациях ...
Луценко, Евгений Викторович +2 more
core +1 more source
Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors
MicromachinesWith the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field.
Pengfei Dai, Shaowei Wang, Hongliang Lu
doaj +1 more source
Recent Advancements in N-polar GaN HEMT Technology
CrystalsN-polar GaN HEMT technology has emerged as a disruptive technology that outperforms Ga-polar GaN HEMTs in terms of high-frequency power amplification capability.
Emre Akso +13 more
doaj +1 more source
AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform
AIP Advances, 2018 In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo +7 more
doaj +1 more source
Characterization of the hysteresis in the output capacitance of GaN HEMT power devices
embargoed_20280909Experimental research regarding the hysteresis phenomena in the output capacitance of different GaN HEMT devices with the objective of better understanding when this non ideality is dominant and if there can be possible circuital ...
DE BONI, DAMIANO
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, 2006 Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates.
Wang JX (Wang Junxi) +6 more
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, 2014 An AlGaN/GaN metal-oxide semiconductor (MOS) high-electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al2O3 gate dielectric films grown using atomic layer deposition.
付 凯 +7 more
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