Results 71 to 80 of about 14,573 (221)

Metalorganic chemical vapor deposition growth and thermal stability of the AllNN/GaN high electron mobility transistor structure [PDF]

, 2011
Cataloged from PDF version of article.The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition.
Bolukbas, B., Cakmak, H., Caliskan, D., Demirel, P., Ozbay, E., Ozturk, M., Yu, H.   +6 more
core   +1 more source

Electronic Transport in AlGaN/GaN Nanowires Under Ultraviolet Excitation and Edge Depletion Effect, Studied in a Wide Temperature Range

Nano Select, Volume 7, Issue 2, February 2026.
Electronic transport in AlGaN/GaN nanowires (NW) was studied under ultraviolet excitation in a wide temperature range. Significant changes in the conductivity of the structures were revealed and explained by the modulation of the space charge limited current (SCLC) effect. Temperature‐dependent measurements of transport and noise properties using noise
Svetlana Vitusevich, Vladislav V. Kaliuzhnyi, Mykola D. Tymochko, Alexander E. Belyaev   +3 more
wiley   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

Impact of Growth Temperature and Al/N Ratio on AlN Films Grown by Radio‐Frequency Molecular Beam Epitaxy on GaN Templates

physica status solidi (b), Volume 263, Issue 2, February 2026.
The growth mechanism of AlN films for high electron mobility transistors passivation is systematically investigated via radio‐frequency molecular beam epitaxy. While high‐temperature growth (700 °C) utilizes excess aluminum as a surfactant forming surface droplets, low‐temperature growth (300 °C) traps excess aluminum as defective metallic interlayers.
Trang Nakamoto, Yuma Kawakami, Takashi Fujii, Momoko Deura, Tsutomu Araki   +4 more
wiley   +1 more source

Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors

, 2019
The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport, solid-state material dynamics, and semiconductor device characterization.
Bagnall, Kevin R., Englund, Dirk R., Foy, Christopher, Trusheim, Matthew E., Walsh, Michael, Wang, Evelyn N., Zhang, Lenan   +6 more
core   +1 more source

Novel super junction technique used in AlGaN/GaN HEMT for high power applications

Materials Research Express, 2022
In this paper, a novel super junction technique in AlGaN/GaN HEMT is proposed and analyzed. The novel super junction is capable of splitting the potential drops to two points rather than a single point in the lateral axis (channel axis).
A Arunraja, S Jayanthy
doaj   +1 more source

Tantalum‐Driven Interfacial Reconstruction Enables Ultra‐Low Contact Resistance in TiAlTa/Au GaN HEMTs

Rare Metals, Volume 45, Issue 2, February 2026.
ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang, Xiao‐Yue Liu, Te Xu, Jiang‐Wen Wang, Yuan‐Hong Shi, Shi‐Dai Tian, Xiang Zhang, Wei‐Guo Hu, Jun‐Yi Zhai   +8 more
wiley   +1 more source

Estimation of background carrier concentration in fully depleted GaN films

, 2015
Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN HEMTs and hence various methods are employed to grow semi-insulating buffer layers.
Bhat, Navakanta, Chandrasekar, Hareesh, Raghavan, Srinivasan, Singh, Manikant   +3 more
core   +1 more source

Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks [PDF]

, 2017
In this work, we report the performance of 3 μm gate length "dual barrier„ InAlN/AlGaN/GaN HEMTs on Si substrates with gate-drain contact separations in the range 4-26 μm.
Cho, Sung-Jin, Floros, Konstantinos, Guiney, Ivor, Hemakumara, Dilini, Humphreys, Colin J., Li, Xu, Moran, David A.J., Thayne, Iain G., Wallis, David J., Wasige, Edward   +9 more
core   +1 more source

Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes

Small, Volume 22, Issue 10, 17 February 2026.
Graphene edge cathodes, with atomically sharp edges, high carrier mobility, and electrostatically tunable electronic structure, enable a nanoscale vacuum transistor whose off‐channel gate directly modulates the emitter work function. The device achieves gate‐tunable current saturation from 10 to 300 K, low leakage, and amplification behavior enabled by
Cheul Hyun Yoon, Jun Yeong Choe, Yeong Jin Ahn, Gil Su Jeon, Byoung Don Kong   +4 more
wiley   +1 more source