Results 71 to 80 of about 7,995 (228)
physica status solidi (b), Volume 263, Issue 2, February 2026.The growth mechanism of AlN films for high electron mobility transistors passivation is systematically investigated via radio‐frequency molecular beam epitaxy. While high‐temperature growth (700 °C) utilizes excess aluminum as a surfactant forming surface droplets, low‐temperature growth (300 °C) traps excess aluminum as defective metallic interlayers.
Trang Nakamoto +4 more
wiley +1 more source
HEMT GaN Normally Off Reliability comparison
, 2021 International audienceRecently, new HEMT GaN Normally Off with a buried Player have been developed by the LAAS Laboratory to propose a device adapted to embedded power electronics. In this article, several Normally Off HEMT GaN architectures are compared
Phulpin, Tanguy, Dinh, Thy Bich Hop
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Physics-Based Compact Model for p-GaN/AlGaN/GaN. Application: Understanding of Degradation After Gamma-Ray Irradiation [PDF]
, 2022 This thesis explores the nature of gallium nitride devices from the point of view of compact modeling paying particular attention to power electronic application.
Modolo, Nicola
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Performances of AlGaN/GaN HEMTs in Planar Technology
, 2004 The advantage of planar technology for the AlGaN/GaN HEMTs realization is demonstrated in this paper. A breakdown voltage closed to 100 V and an output power density of 4 W/mm at 4 GHz have been measured on a 2x25x1.5 µm² HEMT on sapphire substrate.
Werquin, M. +9 more
openaire +3 more sources
Rare Metals, Volume 45, Issue 2, February 2026.ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang +8 more
wiley +1 more source
Micromachines, 2019 In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to
Kyu-Won Jang +5 more
doaj +1 more source
Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes
Small, Volume 22, Issue 10, 17 February 2026.Graphene edge cathodes, with atomically sharp edges, high carrier mobility, and electrostatically tunable electronic structure, enable a nanoscale vacuum transistor whose off‐channel gate directly modulates the emitter work function. The device achieves gate‐tunable current saturation from 10 to 300 K, low leakage, and amplification behavior enabled by
Cheul Hyun Yoon +4 more
wiley +1 more source
Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications
IEEE AccessAn analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 °C and 125 °C.
Naeemul Islam +5 more
doaj +1 more source
Analytical Modeling of GaN-HEMT Considering Finite Width of Two-Dimensional Electron Gas [PDF]
AUT Journal of Electrical EngineeringIn this work, we present an analytical DC model for the Gallium Nimtide High Electron Mobility Transistor by taking into account the finite width of the two-dimensional electron gas (2DEG) layer.
Behnam Jafari Touchaei, Majid Shalchian
doaj +1 more source
Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT
, 2015 session posterInternational audienceIn order to optimize the Ron, we have studied the influence of epitaxy and fluorine based Si3N4 etching on the 2DEG properties of AlGaN/GaN ...
Morvan, E. +15 more
core +1 more source