Results 71 to 80 of about 843 (137)

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries

Frontiers of Optoelectronics
In this paper, we have studied the electrical excitation of plasma-wave in N-polar AlGaN/GaN high electron mobility transistors (HEMT) under asymmetric boundaries leads to terahertz emission.
Runxian Xing, Hongyang Guo, Bohan Guo, Guohao Yu, Ping Zhang, Jia'an Zhou, An Yang, Yu Li, Chunfeng Hao, Huixin Yue, Zhongming Zeng, Xinping Zhang, Baoshun Zhang   +12 more
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Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers

Results in Engineering
GaN HEMT has gained much interest recently because of its widespread uses, which range from high voltage systems used in power electronic devices to RF power amplifiers.
A Akshaykranth, J Ajayan, Sandip Bhattacharya, D Nirmal, Santhosh Paramasivam, Gianluca Gatto, Amit Kumar   +6 more
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Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
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The Potential of GaN HEMT on GaN Substrate

The Potential of GaN HEMT on GaN Substrate
identifier:oai:t2r2.star.titech.ac.jp ...
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GaN HEMT study at cryotemperatures

CONFERENCE MATERIALS, 2020
V.V. Krasnov, V.M. Minnebaev, S.V. Minnebaev, An.V. Red'ka   +3 more
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Oki sampling GaN HEMT

III-Vs Review, 2005
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Cree sampling GaN HEMTs

III-Vs Review, 2006
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GaN HEMT reliability

Microelectronics Reliability, 2009
This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
Jesús A. del Alamo, Jungwoo Joh
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Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT

2012 15th International Workshop on Computational Electronics, 2012
Electrical reliability of the AlGaN/GaN material system in both the on and off state regimes is a fundamental problem to be solved before the widespread use of this technology. The two major reliability concerns in this technology is electric field induced strain degradation also known as electromechanical coupling and current collapse mechanism.
Balaji Padmanabhan, Dragica Vasileska, Stephen M. Goodnick   +2 more
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GaN HEMT for Space Applications

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018
This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions.
Tomio Satoh, Ken Osawa, Atsushi Nitta
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