Results 111 to 120 of about 199,581 (223)

The Potential of GaN HEMT on GaN Substrate

The Potential of GaN HEMT on GaN Substrate
identifier:oai:t2r2.star.titech.ac.jp ...
openaire   +1 more source

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source

A 37-40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT. [PDF]

Nanomaterials (Basel), 2023
Song JH, Lee EG, Lee JE, Son JT, Kim JH, Baek MS, Kim CY.   +6 more
europepmc   +1 more source

AlGaN/GaN HEMT DC Simulation [PDF]

, 2014
Increasing demand in high power and high frequency semiconductor devices has promoted the rapid development of microwave power devices using GaN and SiC.
Wang, Ruocan
core  

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT. [PDF]

Micromachines (Basel), 2023
Liu C, Wang J, Chen Z, Liu J, Su J.
europepmc   +1 more source

An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP₂S₆/GaN HEMT. [PDF]

Sci Adv, 2023
Park M, Yang JY, Yeom MJ, Bae B, Baek Y, Yoo G, Lee K.   +6 more
europepmc   +1 more source

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

, 2007
Enhancement of the electrical properties in an AlGaN/GaN high electron mobility transistor (HEMT) structures was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer. The structures were grown on 50 mm semi-
Li HP (Li Hanping), Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn, Wang JX (Wang Junxi), Mao HL (Mao Hongling), Hu GX (Hu Guoxin), Wang ZG (Wang Zhanguo), Jinmin LM (Li Jinmin), Wang XL (Wang Xiaoliang), Ran JX (Ran Junxue), Tang H (Tang Han), Wang CM (Wang Cuimei), Ma ZY (Ma Zhiyong), Zeng YP (Zeng Yiping)   +12 more
core  

Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms. [PDF]

Nanomaterials (Basel), 2023
Meng Q, Lin Q, Wang Z, Wang Y, Jing W, Xian D, Zhao N, Yao K, Zhang F, Tian B, Jiang Z.   +10 more
europepmc   +1 more source

Considerations for Controlled Switching of the Power GaN HEMT

, 2019
This paper presents characteristics of the GaN HEMT and proposes controlled switching of the GaN Power HEMT. An experimental implementation is described, experimental current drive switching results presented and a closed loop control strategy is ...
Zhang, T, Palmer, P, Long, T, Schillaber, L, ,, Shelton, E   +5 more
core  

Enhancement in crystalline quality in thin-tensile-GaN buffer based AlGaN/GaN HEMT structure

In this paper, we report AlGaN/GaN HEMT structures grown on SiC using MOCVD employing a high-quality 100 nm AlN nucleation layer and a 200 nm tensile-GaN buffer.
Akhilesh Pandey, Sandeep Dalal, Suman Mukherjee, O. P. Thakur, Vikash K. Singh, Preeti Bharti, Pika Jha, Sachin K. Saini, Amit Garg, Agrim Sharma   +9 more
core   +1 more source