Results 111 to 120 of about 14,573 (221)

Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers

Results in Engineering
GaN HEMT has gained much interest recently because of its widespread uses, which range from high voltage systems used in power electronic devices to RF power amplifiers.
A Akshaykranth, J Ajayan, Sandip Bhattacharya, D Nirmal, Santhosh Paramasivam, Gianluca Gatto, Amit Kumar   +6 more
doaj   +1 more source

A 37-40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT. [PDF]

Nanomaterials (Basel), 2023
Song JH, Lee EG, Lee JE, Son JT, Kim JH, Baek MS, Kim CY.   +6 more
europepmc   +1 more source

An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP₂S₆/GaN HEMT. [PDF]

Sci Adv, 2023
Park M, Yang JY, Yeom MJ, Bae B, Baek Y, Yoo G, Lee K.   +6 more
europepmc   +1 more source

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT. [PDF]

Micromachines (Basel), 2023
Liu C, Wang J, Chen Z, Liu J, Su J.
europepmc   +1 more source

GaN/AlGaN hemt yapılarda saçılma mekanizmaları

, 2005
ÖZET GaN/AlGaN HEMT YAPILARDA SAÇILMA MEKANİZMALARI Aykut İLGAZ Balıkesir Üniversitesi, Fen Bilimleri Enstitüsü, Fizik Anabilim Dalı (Tez Danışmanı : Yrd. Doç. Dr. Sibel GÖKDEN) Balıkesir, 2005 Bu çalışmada, GaN/AlGaN arayüzeyinde oluşan 2 boyutlu elektron gazının (2BEG) Hail mobilitesine, başlıca saçılma mekanizmaları olan dislokasyon, deformasyon ...
openaire   +2 more sources

Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter [PDF]

In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented.
Blaabjerg, Frede, Castellazzi, Alberto, Gurpinar, Emre, Iannuzzo, Francesco, Yang, Yongheng   +4 more
core  

Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms. [PDF]

Nanomaterials (Basel), 2023
Meng Q, Lin Q, Wang Z, Wang Y, Jing W, Xian D, Zhao N, Yao K, Zhang F, Tian B, Jiang Z.   +10 more
europepmc   +1 more source

Design and fabrication of a GaN HEMT power amplifier based on hidden Markov model for wireless applications. [PDF]

PLoS One, 2023
Soruri M, Razavi SM, Forouzanfar M, Colantonio P.   +3 more
europepmc   +1 more source

A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications. [PDF]

Sensors (Basel), 2023
Pagnini L, Collodi G, Cidronali A.
europepmc   +1 more source

X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology. [PDF]

Sensors (Basel), 2023
Lee H, Park HG, Le VD, Nguyen VP, Song JM, Lee BH, Park JD.   +6 more
europepmc   +1 more source