Results 111 to 120 of about 7,995 (228)
Considerations for Controlled Switching of the Power GaN HEMT
, 2019 This paper presents characteristics of the GaN HEMT and proposes controlled switching of the GaN Power HEMT. An experimental implementation is described, experimental current drive switching results presented and a closed loop control strategy is ...
Zhang, T +5 more
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A 37-40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT. [PDF]
Nanomaterials (Basel), 2023 Song JH +6 more
europepmc +1 more source
An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP2S6/GaN HEMT. [PDF]
Sci Adv, 2023 Park M +6 more
europepmc +1 more source
The Potential of GaN HEMT on GaN Substrate
The Potential of GaN HEMT on GaN Substrateidentifier:oai:t2r2.star.titech.ac.jp ...
openaire
Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT. [PDF]
Micromachines (Basel), 2023 Liu C, Wang J, Chen Z, Liu J, Su J.
europepmc +1 more source
, 2006 在6H-SiC衬底上,外延生长了AlGaN/GaN HEMT结构,设计并实现了高性能1mm AlGaN/GaN微波功率HEMT,外延材料利用金属有机物化学气相淀积技术生长.测试表明,该1mm栅宽器件栅长为0.8μm,输出电流密度达到1.16A/mm,跨导为241mS/mm,击穿电压＞80V,特征频率达到20GHz,最大振荡频率为28GHz.5.4GHz连续波测试下功率增益为14.2dB,输出功率达4.1W,脉冲条件测试下功率增益为14.4dB,输出功率为5.2W ...
魏珂 +7 more
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Performance comparison of Si, SiC and GaN based power MOSFET/HEMT using DC-DC boost converter
There is a rising demand for power MOSFET semiconductors with low power consumption and high energy efficiency. Wide band-gap semiconductor materials Gallium nitride (GaN) and Silicon Carbide (SiC) achieve the need of low power consumption and high ...
Pande, P +5 more
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Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms. [PDF]
Nanomaterials (Basel), 2023 Meng Q +10 more
europepmc +1 more source
Design and fabrication of a GaN HEMT power amplifier based on hidden Markov model for wireless applications. [PDF]
PLoS One, 2023 Soruri M +3 more
europepmc +1 more source
, 2006 Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers.
Hu, GX +5 more
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