Results 121 to 130 of about 7,995 (228)

A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications. [PDF]

Sensors (Basel), 2023
Pagnini L, Collodi G, Cidronali A.
europepmc   +1 more source

Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée

, 2018
National audienceUn nouveau concept d'interrupteur de puissance HEMT en GaN présentant la fonctionnalité « normally-off » est expérimentalement validé. L'introduction d'une couche P-GaN suffisamment dopée (autour de 2 x 10 18 cm-3) au sein de la couche ...
Chapelle, Audrey, Frayssinet, Éric, Cordier, Yvon, Morancho, Frédéric, Benmosfeta, Leïla, Trémouilles, David, Austin, Patrick, Spiegel, Yohann, HACHEM, Dany, Isoird, Karine, Tasselli, Josiane, Haloui, Chaymaa   +11 more
core   +1 more source

Optimization AlGaN/GaN HEMT with Field Plate Structures. [PDF]

Micromachines (Basel), 2022
Shi N, Wang K, Zhou B, Weng J, Cheng Z.
europepmc   +1 more source

X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology. [PDF]

Sensors (Basel), 2023
Lee H, Park HG, Le VD, Nguyen VP, Song JM, Lee BH, Park JD.   +6 more
europepmc   +1 more source

Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation. [PDF]

Micromachines (Basel), 2022
Alathbah M, Elgaid K.
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT. [PDF]

Materials (Basel), 2023
Jiang J, Chen Q, Hu S, Shi Y, He Z, Huang Y, Hui C, Chen Y, Wu H, Lu G.   +9 more
europepmc   +1 more source

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors. [PDF]

Micromachines (Basel), 2022
Wang H, You H, Yang J, Yang M, Wang L, Zhao H, Xie Z, Chen D.   +7 more
europepmc   +1 more source

Characterization and Failure Mode Analysis of Cascode GaN HEMT

, 2014
Recent emerging gallium nitride (GaN) high electron mobility transistor (HEMT) is expected to be a promising candidate for high frequency power conversion techniques.
Liu, Zhengyang
core  

The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]

Micromachines (Basel)
Shi Y, Chen Y, He L, Chen X, Chen Y, Lu G.   +5 more
europepmc   +1 more source