Results 121 to 130 of about 199,581 (223)

Design and fabrication of a GaN HEMT power amplifier based on hidden Markov model for wireless applications. [PDF]

PLoS One, 2023
Soruri M, Razavi SM, Forouzanfar M, Colantonio P.   +3 more
europepmc   +1 more source

A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications. [PDF]

Sensors (Basel), 2023
Pagnini L, Collodi G, Cidronali A.
europepmc   +1 more source

Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation. [PDF]

Micromachines (Basel), 2022
Alathbah M, Elgaid K.
europepmc   +1 more source

AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]

Microsyst Nanoeng
Yu Y, Liu Y, Ren W, Liu Y, Zhang Y, Wang Z, Zhuo Q, Liu Z, Wang T, Sun J.   +9 more
europepmc   +1 more source

X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology. [PDF]

Sensors (Basel), 2023
Lee H, Park HG, Le VD, Nguyen VP, Song JM, Lee BH, Park JD.   +6 more
europepmc   +1 more source

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT. [PDF]

Materials (Basel), 2023
Jiang J, Chen Q, Hu S, Shi Y, He Z, Huang Y, Hui C, Chen Y, Wu H, Lu G.   +9 more
europepmc   +1 more source

高性能1mm SiC基AlGaN/GaN功率HEMT研制

, 2006
在6H-SiC衬底上,外延生长了AlGaN/GaN HEMT结构,设计并实现了高性能1mm AlGaN/GaN微波功率HEMT,外延材料利用金属有机物化学气相淀积技术生长.测试表明,该1mm栅宽器件栅长为0.8μm,输出电流密度达到1.16A/mm,跨导为241mS/mm,击穿电压＞80V,特征频率达到20GHz,最大振荡频率为28GHz.5.4GHz连续波测试下功率增益为14.2dB,输出功率达4.1W,脉冲条件测试下功率增益为14.4dB,输出功率为5.2W ...
魏珂, 陈晓娟, 王晓亮, 李成瞻, 和致经, 梁晓新, 罗卫军, 刘新宇   +7 more
core  

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors. [PDF]

Micromachines (Basel), 2022
Wang H, You H, Yang J, Yang M, Wang L, Zhao H, Xie Z, Chen D.   +7 more
europepmc   +1 more source

The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]

Micromachines (Basel)
Shi Y, Chen Y, He L, Chen X, Chen Y, Lu G.   +5 more
europepmc   +1 more source