Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage. [PDF]
Xia X, Guo Z, Sun H.
europepmc +1 more source
Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]
Chuang YT, Tumilty N.
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Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. [PDF]
Wang H +6 more
europepmc +1 more source
Fault interruption scheme for HVDC systems using GaN-HEMT and VCB. [PDF]
Raza A +5 more
europepmc +1 more source
Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT. [PDF]
Qin Y +5 more
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Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis [PDF]
Bertazzi, Francesco +3 more
core +1 more source
Impact of Multi-Bias on the Performance of 150 nm GaN HEMT for High-Frequency Applications. [PDF]
Alim MA, Gaquiere C.
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Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation. [PDF]
Sheu G +4 more
europepmc +1 more source
GaN-HEMT Based Very-High-Frequency AC Power Supply for Electrosurgery. [PDF]
Bao C, Mazumder SK.
europepmc +1 more source
Novel Bidirectional ESD Circuit for GaN HEMT. [PDF]
Zhang P +7 more
europepmc +1 more source

