Results 131 to 140 of about 7,995 (228)

Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse. [PDF]

Micromachines (Basel), 2022
Wang L, Chai C, Zhao T, Li F, Qin Y, Yang Y.   +5 more
europepmc   +1 more source

Thermal property evaluation of a 2.5D integration method with device level microchannel direct cooling for a high-power GaN HEMT device. [PDF]

Microsyst Nanoeng, 2022
Lian T, Xia Y, Wang Z, Yang X, Fu Z, Kong X, Lin S, Ma S.   +7 more
europepmc   +1 more source

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc   +1 more source

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation. [PDF]

Materials (Basel), 2022
Qu Y, Deng N, Yuan Y, Hu W, Liu H, Wu S, Wang H.   +6 more
europepmc   +1 more source

GaN-HEMT Performance Enhancement

Journal of Electrical Systems
In this work, a simulation analysis and calibration are carried out to improve the performance of AlGaN/GaN- MOSHEMTs (Metal-Oxide Semiconductor High Electron Mobility Transistors). The effect of the AlGaN layer thickness, gate length, Al mole fraction, and the interface traps on the electrical performance of the device has been presented.
openaire   +1 more source

MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate

, 2007
High-mobility Al0.3Ga0.7N/AlN/GaN high electron mobility transistors (HEMT) structure has been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate.
Ran JX (Ran Junxue), Li HP (Li Hanping), Wang JX (Wang Junxi), Mao HL (Mao Hongling), Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China., Hu GX (Hu Guoxin), Fang CB (Fang Cebao), Li JM (Li Jinmin), Wang CM (Wang Cuimei), Wang ZG (Wang, Zhanguo), Wang XL (Wang Xiaoliang)   +10 more
core  

A hybrid GaN HEMT model merging artificial neural networks and ASM-HEMT for parameter precision and scalability

An innovative hybrid physical model for gallium nitride high-electron-mobility transistors (GaN HEMTs) that leverages an artificial neural network (ANN) approach is proposed.
Wang, Wensong, Lu, Zhongzhiguang, Zhuang, Yihao, Li, Hanchao, Xie, Hanlin, Zheng, Yuanjin, Ng, Geok Ing   +6 more
core   +1 more source

A Ku-Band 13 W GaN HEMT Power Amplifier MMIC with a Coupled-Line Interstage Stabilization Technique for Radar Sensor Systems. [PDF]

Sensors (Basel)
Kim J.
europepmc   +1 more source

Research on Switching Current Model of GaN HEMT Based on Neural Network. [PDF]

Micromachines (Basel)
Wang X, Zhao Z, Chen H, Sun X, Wang S, Zhang G.   +5 more
europepmc   +1 more source

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage. [PDF]

Micromachines (Basel), 2021
Xia X, Guo Z, Sun H.
europepmc   +1 more source