Results 131 to 140 of about 199,581 (223)

Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse. [PDF]

Micromachines (Basel), 2022
Wang L, Chai C, Zhao T, Li F, Qin Y, Yang Y.   +5 more
europepmc   +1 more source

Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures

, 2006
Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers.
Hu, GX, Wang, JX, Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China., Wang, CM, Li, JP, Wang, XL   +5 more
core  

Thermal property evaluation of a 2.5D integration method with device level microchannel direct cooling for a high-power GaN HEMT device. [PDF]

Microsyst Nanoeng, 2022
Lian T, Xia Y, Wang Z, Yang X, Fu Z, Kong X, Lin S, Ma S.   +7 more
europepmc   +1 more source

Performance comparison of Si, SiC and GaN based power MOSFET/HEMT using DC-DC boost converter

There is a rising demand for power MOSFET semiconductors with low power consumption and high energy efficiency. Wide band-gap semiconductor materials Gallium nitride (GaN) and Silicon Carbide (SiC) achieve the need of low power consumption and high ...
Pande, P, Joshi, V, Chaturvedi, M, Jadli, U, Nautiyal, P, Bisht, C   +5 more
core   +1 more source

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc   +1 more source

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation. [PDF]

Materials (Basel), 2022
Qu Y, Deng N, Yuan Y, Hu W, Hu W, Liu H, Wu S, Wang H.   +7 more
europepmc   +1 more source

A Ku-Band 13 W GaN HEMT Power Amplifier MMIC with a Coupled-Line Interstage Stabilization Technique for Radar Sensor Systems. [PDF]

Sensors (Basel)
Kim J.
europepmc   +1 more source

Research on Switching Current Model of GaN HEMT Based on Neural Network. [PDF]

Micromachines (Basel)
Wang X, Zhao Z, Chen H, Sun X, Wang S, Zhang G.   +5 more
europepmc   +1 more source

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage. [PDF]

Micromachines (Basel), 2021
Xia X, Guo Z, Sun H.
europepmc   +1 more source

Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N.
europepmc   +1 more source