Results 31 to 40 of about 199,581 (223)

Simulations of High Mobility AlGaN/GaN Field Effect Transistors. Mobility and Quantum Effects [PDF]

, 2022
Introduction to GaN and GaN-based HEMT. Mobility in HEMT and implementation of GaN mobility model in Sentaurus simulator. Quantum effects in HEMT and simultations of different back barriers (InGaN and AlGaN)openEmbargo per motivi di segretezza e di ...
Omenetto, Leonardo
core  

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]

E3S Web of Conferences
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae, Bri Seddik, El Fadl Adiba   +2 more
doaj   +1 more source

-GaN Gate Double-Channel GaN HEMT

, 2023
Electroluminescence (EL) of a Schottky-type p -GaN gate double-channel (DC-) GaN high-electron-mobility transistor (HEMT) was investigated to understand the mechanism of the carrier dynamics in the gate stack.
Tao Chen, Zheng, Zheyang, Junting Chen, Mengyuan Hua, Chen, Tao, Hua, Mengyuan, Liao, Hang, Chen, Junting, Hang Liao, Cheng, Yan, Kevin J. Chen, Zheyang Zheng, Feng, Sirui, Chen, Kevin J., Sirui Feng, Yan Cheng   +15 more
core   +1 more source

High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

IEEE Journal of the Electron Devices Society, 2022
A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Zhijia Zhao, Bo Zhang, Xiaorong Luo   +7 more
doaj   +1 more source

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process [PDF]

International Journal of Microwave and Wireless Technologies, 2011
A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it ...
Jardel, Olivier, Callet, Guillaume, Dufraisse, Jérémy, Piazza, Michele, Sarazin, N., Chartier, E., Oualli, M., Aubry, R., Reveyrand, Tibault, Jacquet, J.C., Di Forte Poisson, M.A., Morvan, E., Piotrowicz, S., Delage, S.L.   +13 more
openaire   +2 more sources

Affidabilità e stima del tempo di vita di transistor GaN HEMT per applicazioni spaziali [PDF]

, 2022
Il lavoro di tesi si è concentrato sullo studio dell'affidabilità di una tecnologia di transistor HEMT AlGaN/GaN per applicazioni spaziali. Lo studio è stato effettuato attraverso un test di storage a tre temperature.
Vertuan, Marcello
core  

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template

Applied Sciences, 2019
The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron ...
Haruka Matsuura, Takeyoshi Onuma, Masatomo Sumiya, Tomohiro Yamaguchi, Bing Ren, Meiyong Liao, Tohru Honda, Liwen Sang   +7 more
doaj   +1 more source

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect

Electronics Letters, 2021
In this work, a novel GaN MIS‐HEMT (metal‐insulator‐semiconductor high electron mobility transistors) featuring a floating clamp (FC) electrode is proposed for suppressing the short‐channel effect.
Yijun Shi, Hongyue Wang
doaj   +1 more source

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Micro & Nano Letters, 2021
An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou, Qing Ye, Junyu Dai, Tianyu Guo, Jinqiu Zhang, Zheng Li, You Wu, Ziyu Zhao, Ziqi Zhao, Zhiheng Wei   +9 more
doaj   +1 more source