Results 11 to 20 of about 843 (137)

An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT

Energies, 2023
GaN high electron mobility transistors (HEMTs) represent an emerging and key enabling technology for obtaining highly efficient and compact power electronic systems.
Enrico Alfredo Bottaro, Santi Agatino Rizzo   +1 more
doaj   +1 more source

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +1 more source

Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer

IEEE Journal of the Electron Devices Society, 2020
In order to explore the distribution of the device temperature field, this paper takes the new AlGaN/GaN HEMT with partial etched AlGaN layer as the research object. First, the ISE TCAD software is used to simulate the temperature field of AlGaN/GaN HEMT
Baoxing Duan, Luoyun Yang, Hao Wu, Yintang Yang   +3 more
doaj   +1 more source

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

IEEE Journal of the Electron Devices Society, 2022
The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is ...
Jianhua Liu, Jun Zhang, Jiafei Yao, Man Li, Jing Chen, Maolin Zhang, Xiaoming Huang, Chenyang Huang, Weihua Tang, Yufeng Guo   +9 more
doaj   +1 more source

An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications

IEEE Journal of the Electron Devices Society, 2023
This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures.
Nicholas C. Miller, Alexis Brown, Michael Elliott, Ryan Gilbert, Devin T. Davis, Ahmad E. Islam, Dennis Walker, Gary Hughes, Kyle Liddy, Kelson D. Chabak   +9 more
doaj   +1 more source

InAlN/GaN HEMT With n⁺GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications

IEEE Journal of the Electron Devices Society, 2023
In this work, high performance InAlN/GaN HEMT based on the n+GaN regrown ohmic contact with n+GaN contact ledge structure is proposed. The regrown ohmic contact of InAlN/GaN HEMT is formed by MBE n+GaN regrowth and self-stopping ...
Can Gong, Minhan Mi, Yuwei Zhou, Pengfei Wang, Yilin Chen, Jielong Liu, Yutong Han, Sirui An, Siyin Guo, Meng Zhang, Qing Zhu, Mei Yang, Xiaohua Ma, Yue Hao   +13 more
doaj   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines, 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul   +4 more
doaj   +1 more source

High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

IEEE Journal of the Electron Devices Society, 2022
A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Zhijia Zhao, Bo Zhang, Xiaorong Luo   +7 more
doaj   +1 more source

Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment

Results in Physics, 2019
Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
doaj   +1 more source

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]

E3S Web of Conferences
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae, Bri Seddik, El Fadl Adiba   +2 more
doaj   +1 more source