Results 11 to 20 of about 7,995 (228)
IEEE Journal of the Electron Devices Society, 2022 A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang +5 more
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Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review
Energies, 2022 Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems.
Enrico Bottaro +2 more
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Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
Results in Physics, 2023 In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen +4 more
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Micromachines, 2022 This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability.
Hongyue Wang +5 more
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Micromachines, 2023 In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip ...
Kuo-Bin Hong +7 more
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An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT
Energies, 2023 GaN high electron mobility transistors (HEMTs) represent an emerging and key enabling technology for obtaining highly efficient and compact power electronic systems.
Enrico Alfredo Bottaro +1 more
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A low phase noise W-band MMIC GaN HEMT oscillator [PDF]
, 2020 This paper presents a fundamental mode W-band MMIC balanced Colpitts oscillator implemented in an advanced 60 nm gallium nitride (GaN) high electron mobility transistor (HEMT) process from OMMIC foundry.
Dan Kuylenstierna +8 more
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The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT
IEEE Journal of the Electron Devices Society, 2022 The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is ...
Jianhua Liu +9 more
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Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
IEEE Journal of the Electron Devices Society, 2020 In order to explore the distribution of the device temperature field, this paper takes the new AlGaN/GaN HEMT with partial etched AlGaN layer as the research object. First, the ISE TCAD software is used to simulate the temperature field of AlGaN/GaN HEMT
Baoxing Duan +3 more
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Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator
Membranes, 2021 A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu +7 more
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