Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
IEEE Journal of the Electron Devices Society, 2020 In order to explore the distribution of the device temperature field, this paper takes the new AlGaN/GaN HEMT with partial etched AlGaN layer as the research object. First, the ISE TCAD software is used to simulate the temperature field of AlGaN/GaN HEMT
Baoxing Duan +3 more
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Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator
Membranes, 2021 A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu +7 more
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The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT
IEEE Journal of the Electron Devices Society, 2022 The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is ...
Jianhua Liu +9 more
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AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
Wasige, E. +5 more
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Caratterizzazione DC e dinamica di dispositivi di potenza su GaN [PDF]
, 2022 Breve descrizione dei più comuni dispositivi di potenza su Si e di modelli sperimentali su GaN, con relativa caratterizzazione DC e dinamica.
Grassi, Biagio
core
An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications
IEEE Journal of the Electron Devices Society, 2023 This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures.
Nicholas C. Miller +9 more
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Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor
, 2021 We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor.
Hong-Quan Nguyen +19 more
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Micromachines, 2022 The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq +4 more
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Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment
Results in Physics, 2019 Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
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InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications
IEEE Journal of the Electron Devices Society, 2023 In this work, high performance InAlN/GaN HEMT based on the n+GaN regrown ohmic contact with n+GaN contact ledge structure is proposed. The regrown ohmic contact of InAlN/GaN HEMT is formed by MBE n+GaN regrowth and self-stopping ...
Can Gong +13 more
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