Results 21 to 30 of about 14,573 (221)
AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
MacFarlane, D., Taking, S., Wasige, E.
core +3 more sources
An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications
IEEE Journal of the Electron Devices Society, 2023 This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures.
Nicholas C. Miller +9 more
doaj +1 more source
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs [PDF]
, 2019 GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high
Martín Holgado, Pedro +3 more
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Micromachines, 2022 The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq +4 more
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A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]
, 2014 A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah +7 more
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InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications
IEEE Journal of the Electron Devices Society, 2023 In this work, high performance InAlN/GaN HEMT based on the n+GaN regrown ohmic contact with n+GaN contact ledge structure is proposed. The regrown ohmic contact of InAlN/GaN HEMT is formed by MBE n+GaN regrowth and self-stopping ...
Can Gong +13 more
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GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation [PDF]
, 2017 Recently, various high-efficiency RF rectifiers have been proposed. In this article, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS ...
Kazuhiko Honjo +2 more
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Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment
Results in Physics, 2019 Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
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High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
IEEE Journal of the Electron Devices Society, 2022 A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun +7 more
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Oscillator Phase Noise and Small-Scale Channel Fading in Higher Frequency Bands [PDF]
, 2014 This paper investigates the effect of oscillator phase noise and channel variations due to fading on the performance of communication systems at frequency bands higher than 10GHz.
Eriksson, Thomas +3 more
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