Results 51 to 60 of about 70,189 (251)

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source

Preconditioning of p-GaN power HEMT for reproducible V measurements

Microelectronics Reliability, 2023
In reliability studies, the instability of the threshold voltage (Vth) is problematic when Vth is used as an indicator as it totally blurs an eventual drift due to real device aging. This instability is observed during electric characterization measurements and is relatedto the “biasing history” of the transistor which can introduce carrier trapping ...
Ghizzo, L., Trémouilles, David, Richardeau, Frédéric, Vinnac, S., Moreau, Lucas, Mauran, Nicolas   +5 more
openaire   +3 more sources

Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance

IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020
The $p$ -GaN gate technology is commonly implemented to achieve normally OFF gallium nitride (GaN) devices. Nonetheless, the threshold voltage instability under OFF-state stress remains a concern.
Fei Yang, Chi Xu, B. Akin
semanticscholar   +1 more source

125 - 211 GHz low noise MMIC amplifier design for radio astronomy [PDF]

, 2019
To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used.
Cleary, Kieran, Fuller, Gary A., George, Danielle, Lai, Richard, McGenn, William, Mei, Gerry, Readhead, Anthony, White, Daniel   +7 more
core   +2 more sources

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace   +5 more
doaj   +1 more source

A Temperature Analysis of High-power AlGaN/GaN HEMTs [PDF]

, 2006
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies.
Borghs, G., Das, J., Derluyn, J., Germain, M., Ji, H., Kuball, M., Oprins, H., Ruythooren, W., Sarua, A.   +8 more
core   +2 more sources

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
ABSTRACT The transport properties and electrical bandgap of nominally undoped ≈$\approx$75‐nm‐thick CrN layers simultaneously grown on AlN(0001) and AlN(112¯$\bar{2}$2) templates using plasma‐assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(112¯$\bar{2}$2) exhibit (111) and (113) surface orientations, respectively.
Duc V. Dinh, Jens Herfort, Andreas Fiedler, Oliver Brandt   +3 more
wiley   +1 more source

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Semiconductor Science and Technology
A novel structure of p-GaN high-electron-mobility transistor (HEMT) is proposed and studied. It features two composite layers. One is the composite passivation (CP) layer consisting of Si3N4 and high-permittivity (HK) film.
Junji Cheng, Queyang Wang, Yikai Liu, Guo Ding, Minming Zhang, Bo Yi, Haimeng Huang, Hongqiang Yang   +7 more
semanticscholar   +1 more source