Results 51 to 60 of about 25,575,016 (220)

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source

E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability

, 2020
in this work, we investigate the gate reliability of E-mode ${p-n}$ junction gate (PNJ) HEMT, which features an n GaN/p-GaN/AlGaN/GaN gate stack. Both electric-field and thermal-accelerated time-dependent gate breakdown (TDGB) tests were conducted on the
Wang, Chengcai, Yang, Song, Zhang, Li, Chen, Kevin J., Hua, Mengyuan   +4 more
core   +1 more source

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]

, 2012
Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

Two‐Dimensional Carrier Gas at Diamond and Cubic Boron Nitride (111) Interface: Role of Interfacial Bonding and Defects

Advanced Electronic Materials, EarlyView.
The study identifies four bonding configurations at the (111) diamond/c‐BN interface, where B or N atoms bond with either one or three carbon atoms. C‐B bonds create two‐dimensional (2D) hole gases, while C–N bonds create electron gases. Three‐C‐bonded interfaces show three times higher carrier density than one‐C‐bonded interfaces.
Shikha Saini, Konstantin Klyukin, Mengren Bill Liu, Mark J. Polking, Bilge Yildiz   +4 more
wiley   +1 more source

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace   +5 more
doaj   +1 more source

Interface Engineering in Piezoelectric‐on‐Insulator Platforms: Coupling of Electrons, Photons, and Phonons for Multifunctional Integration

Electron, EarlyView.
The underlying interface physics and engineering strategies across key POI material systems, including LiNbO3/Si, LiNbO3/SiC, LiNbO3/diamond, and AlN/diamond, were reviewed. The key engineering strategies such as atomic‐scale bonding optimization, nanostructuring, ultrathin phonon‐bridge interlayers, and ferroelectric domain wall engineering for ...
Yunjia Bao, Zhiqiang Wang, Rongbang Yang, Gongbin Tang, Ruiqiang Guo, Kunfeng Chen, Wen Hu   +6 more
wiley   +1 more source

Preconditioning of p-GaN power HEMT for reproducible V measurements

Microelectronics Reliability, 2023
In reliability studies, the instability of the threshold voltage (Vth) is problematic when Vth is used as an indicator as it totally blurs an eventual drift due to real device aging. This instability is observed during electric characterization measurements and is relatedto the “biasing history” of the transistor which can introduce carrier trapping ...
Ghizzo, L., Trémouilles, David, Richardeau, Frédéric, Vinnac, S., Moreau, Lucas, Mauran, Nicolas   +5 more
openaire   +3 more sources

Vacancy‐Type Defects in N‐Implanted GaN and Their Impact on Mg Diffusion Studied by a Monoenergetic Positron Beam

physica status solidi (b), Volume 263, Issue 11, November 2026.
Vertical GaN devices have been extensively studied, and Mg implantation with sequential N implantation has been reported as an ideal technique for fabricating p‐type regions in these devices. We used positron annihilation to study vacancy behavior during ultrahigh‐pressure annealing. It was found that the imbalanced formation of Ga‐ and N‐vacancies and
Akira Uedono, Moriyuki Kanno, Shigefusa F. Chichibu, Shoji Ishibashi, Tetsu Kachi, Jun Suda   +5 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, Volume 38, Issue 60, 27 October 2026.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source