Results 61 to 70 of about 70,189 (251)

First‐Principles Study of Structural, Elastic, and Piezoelectric Properties of Wurtzite Superlattice ScxAl1−xN, ScxGa1−xN, and ScxIn1−xN Alloys

physica status solidi (b), Volume 263, Issue 4, April 2026.
This study investigates the structural, elastic, and piezoelectric properties of Sc‐doped wurtzite nitrides using first‐principles calculations. A strong compositional dependence of elastic and piezoelectric coefficients is observed, with significant nonlinearities providing insights into the tunability of these materials for piezoelectric applications.
Hang Cui, William Alan Doolittle, Lukas Graber, Paul Douglas Yoder   +3 more
wiley   +1 more source

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors

Micromachines, 2022
This work investigates the impacts of structural parameters on the performances of p-GaN/AlGaN/GaN HEMT-based ultraviolet (UV) phototransistors (PTs) using Silvaco Atlas.
Haiping Wang, Haifan You, Jiangui Yang, Minqiang Yang, Lu Wang, Hong Zhao, Zili Xie, Dunjun Chen   +7 more
doaj   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source

GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications [PDF]

, 2016
This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance.
Eblabla, Abdalla, Elgaid, Khaled, Guiney, Ivor, Li, Xu, Wallis, David J.   +4 more
core  

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

, 2015
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy.
Ganguly, Satyaki, Hu, Zongyang, Jena, Debdeep, Li, Guowang, Mintairov, Alexander, Protasenko, Vladimir, Qi, Meng, Song, Bo, Verma, Jai, Xing, Huili Grace, Yan, Xiaodong, Zhao, Pei, Zhu, Mingda   +12 more
core   +1 more source

Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE [PDF]

, 1999
The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers and as a function of III/V flux ratio. Films are grown on sapphire substrates by molecular beam epitaxy using a radio frequency nitrogen plasma ...
Beach, R. A., Bridger, P. M., McGill, T. C., Piquette, E. C.   +3 more
core   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu, Wen Ji, Jiaren Feng, Ming Jiang, Chunmin Cheng, Wei Yu, Hailing Guo, Baikui Li, Hui Li, Zhaofu Zhang, Xi Tang   +10 more
wiley   +1 more source

When self-consistency makes a difference [PDF]

, 2008
Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits.
Bonani, Fabrizio, Camarchia, Vittorio, Cappelluti, Federica, Donati Guerrieri, Simona, Ghione, Giovanni, Pirola, Marco   +5 more
core   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Evaluation on Temperature-Dependent Transient V_T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Micromachines, 2022
In this work, temperature-dependent transient threshold voltage (VT) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltage ...
Rui Wang, Hui Guo, Qianyu Hou, Jianming Lei, Jin Wang, Junjun Xue, Bin Liu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng   +10 more
doaj   +1 more source