Results 81 to 90 of about 25,575,016 (220)

of p-GaN Gate HEMT

, 2021
In this work, the impacts of OFF-state gate bias (VGS,OFF) on the dynamic on-resistance (RON) are investigated in the commercial Schottky-type p-GaN gate high-electron-mobility transistor (HEMT).
Xinran Huang, Lingling Li, Junting Chen, Jiang, Zuoheng, Kevin J. Chen, Mengyuan Hua, Zuoheng Jiang, Chen, Kevin J., Huang, Xinran, Hua, Mengyuan, Li, Lingling, Chen, Junting   +11 more
core   +1 more source

An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes

IEEE Journal of the Electron Devices Society, 2020
This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions
Chih-Yao Chang, Yi-Chen Li, Kailin Ren, Yung C. Liang, Chih-Fang Huang   +4 more
doaj   +1 more source

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
ABSTRACT The transport properties and electrical bandgap of nominally undoped ≈$\approx$75‐nm‐thick CrN layers simultaneously grown on AlN(0001) and AlN(112¯$\bar{2}$2) templates using plasma‐assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(112¯$\bar{2}$2) exhibit (111) and (113) surface orientations, respectively.
Duc V. Dinh, Jens Herfort, Andreas Fiedler, Oliver Brandt   +3 more
wiley   +1 more source

First‐Principles Study of Structural, Elastic, and Piezoelectric Properties of Wurtzite Superlattice ScxAl1−xN, ScxGa1−xN, and ScxIn1−xN Alloys

physica status solidi (b), Volume 263, Issue 4, April 2026.
This study investigates the structural, elastic, and piezoelectric properties of Sc‐doped wurtzite nitrides using first‐principles calculations. A strong compositional dependence of elastic and piezoelectric coefficients is observed, with significant nonlinearities providing insights into the tunability of these materials for piezoelectric applications.
Hang Cui, William Alan Doolittle, Lukas Graber, Paul Douglas Yoder   +3 more
wiley   +1 more source

增强型AlGaN/GaN HEMT器件工艺的研究进展

, 2011
随着高压开关和高速射频电路的发展，增强型GaN基高电子迁移率晶体管(HEMT)成为该领域内的研究热点。增强型GaN基HEMT只有在加正栅压才有工作电流，可以大大拓展该器件在低功耗数字电路中的应用。近年来，国内外对增强型GaN基HEMT阈值电压的研究主要集中以下两个方面: 在材料生长方面，通过生长薄势垒、降低Al组分、生长无极化电荷的 AIGaN/GaN异质材料、生长InGaN或p-GaN盖帽层，来控制二维电子气浓度; 在器件工艺方面，采用高功函数金属、MIS结构、刻蚀凹栅、F基等离子体处理 ...
颜伟, 熊莹, 张严波, 杨富华, 韩伟华, 张仁平, 杜彦东   +6 more
core  

Design of GaN HEMT Buck Converter for BCM Operation

Energies
Power density and power efficiency are crucial for the design of high-performance computing servers. Buck converters exist due to their simplicity, but achieving a solution that combines high efficiency and high power density remains an ongoing research ...
Yueh-Tsung Hsieh, Chun-Hao Chen, Tsung-Lin Chen, Wei-Hua Chieng, Edward-Yi Chang   +4 more
doaj   +1 more source

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

, 2020
A 1200-V/100-mΩ silicon carbide (SiC) junction field-effect-transistor (JFET)/ gallium nitride (GaN) high-electron-mobility-transistor (HEMT) hybrid power switch is demonstrated, which features a flip-chip copackaged cascode configuration incorporating a
Zheng, Zheyang, Wei, Jin, Zhang, Long, Chen, Kevin J., Lyu, Gang, Wang, Yuru, Sun, Jiahui   +6 more
core   +1 more source

A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

Power Electronic Devices and Components
The characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for
Patrick Diehle, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, Manuel Stabentheiner, Clemens Ostermaier   +6 more
doaj   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu, Wen Ji, Jiaren Feng, Ming Jiang, Chunmin Cheng, Wei Yu, Hailing Guo, Baikui Li, Hui Li, Zhaofu Zhang, Xi Tang   +10 more
wiley   +1 more source