Results 81 to 90 of about 70,189 (251)

Electronic Transport in AlGaN/GaN Nanowires Under Ultraviolet Excitation and Edge Depletion Effect, Studied in a Wide Temperature Range

Nano Select, Volume 7, Issue 2, February 2026.
Electronic transport in AlGaN/GaN nanowires (NW) was studied under ultraviolet excitation in a wide temperature range. Significant changes in the conductivity of the structures were revealed and explained by the modulation of the space charge limited current (SCLC) effect. Temperature‐dependent measurements of transport and noise properties using noise
Svetlana Vitusevich, Vladislav V. Kaliuzhnyi, Mykola D. Tymochko, Alexander E. Belyaev   +3 more
wiley   +1 more source

Impact of Growth Temperature and Al/N Ratio on AlN Films Grown by Radio‐Frequency Molecular Beam Epitaxy on GaN Templates

physica status solidi (b), Volume 263, Issue 2, February 2026.
The growth mechanism of AlN films for high electron mobility transistors passivation is systematically investigated via radio‐frequency molecular beam epitaxy. While high‐temperature growth (700 °C) utilizes excess aluminum as a surfactant forming surface droplets, low‐temperature growth (300 °C) traps excess aluminum as defective metallic interlayers.
Trang Nakamoto, Yuma Kawakami, Takashi Fujii, Momoko Deura, Tsutomu Araki   +4 more
wiley   +1 more source

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

, 2017
The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors.
Li, Xiang(李想), Li, Xingxin, Luo, Muchang, Qin, Hua(秦华), Sun, Jiandong(孙建东), Sun, Yunfei(孙云飞), Yu, Yao, Zhang, Zhipeng(张志鹏), 孙建东, 秦华   +9 more
core   +1 more source

Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes

Small, Volume 22, Issue 10, 17 February 2026.
Graphene edge cathodes, with atomically sharp edges, high carrier mobility, and electrostatically tunable electronic structure, enable a nanoscale vacuum transistor whose off‐channel gate directly modulates the emitter work function. The device achieves gate‐tunable current saturation from 10 to 300 K, low leakage, and amplification behavior enabled by
Cheul Hyun Yoon, Jun Yeong Choe, Yeong Jin Ahn, Gil Su Jeon, Byoung Don Kong   +4 more
wiley   +1 more source

Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors [PDF]

, 2014
The evolution of AlGaN/GaN high electron-mobility transistors under off-state stress conditions is studied by gate leakage current (Ig) monitoring, electroluminescence (EL), and atomic force microscope (AFM) imaging at room temperature.
Kuball, Martin H H, Montes Bajo, Miguel, Sun, Huarui, Uren, Michael J   +3 more
core   +2 more sources

Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates [PDF]

Gallium Nitride Materials and Devices XIV, 2019
A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are ...
Gulseren, Melisa Ekin, Bozok, Berkay, Kurt, Gokhan, Kayal, Omer Ahmet, Ozturk, Mustafa, Ural, Sertac, Butun, Bayram, Ozbay, Ekmel   +7 more
openaire   +3 more sources

Polarity‐Controlled Volatile HfO2 Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir Computing

Advanced Science, Volume 13, Issue 3, 14 January 2026.
This study demonstrates a TiN/HfO2/ITO memristor exhibiting field‐induced bimodal volatile switching behavior originating from ion bombardment during sputtering. The dipole‐driven, polarity‐dependent states produce multilevel output responses that expand the reservoir's output dimensionality and enhance encoding diversity.
Yuseong Jang, Chanmin Hwang, Myoungsu Chae, Taegi Kim, Hee‐Dong Kim   +4 more
wiley   +1 more source

An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes

IEEE Journal of the Electron Devices Society, 2020
This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions
Chih-Yao Chang, Yi-Chen Li, Kailin Ren, Yung C. Liang, Chih-Fang Huang   +4 more
doaj   +1 more source

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements [PDF]

, 2013
The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis.
Denis Marcon, Kikkawa T., Marco Silvestri, Martin Kuball, Michael J. Uren, Nicole Killat   +5 more
core   +3 more sources