Co-optimized e-mode AlGaN/GaN HEMT with composite p-GaN recessed cap and etched doped buffer for simultaneous DC and RF performance enhancement [PDF]
Serbian Journal of Electrical EngineeringThis study presents a theoretical analysis of the DC and RF characteristics of enhancement mode (E-mode) AlGaN/GaN High Electron Mobility Transistor (HEMT) utilizing symbiotic integration of advanced techniques e.g. composite gate structure with slightly
Al Fahad Abdullah +4 more
doaj +1 more source
Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
, 2010 AlGaN/GaN heterostructure devices are capable of delivering high-frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies. Primarily
Zhou, Chunhua +3 more
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GaN/Si Hetero-Structure Integration of Complementary Logic Inverter for Power Conversion
IEEE Journal of the Electron Devices SocietyThe paper demonstrates a GaN/Si hetero-structure integration of complementary logic inverter for power conversion, combining a GaN $n$ -channel high-electron-mobility transistor (HEMT) and a Si $p$ -channel metal-oxide-semiconductor field-effect ...
Ang Li +13 more
doaj +1 more source
Вольт-амперные характеристики hemt-транзисторов на основе GaN [PDF]
, 2017 Представлены результаты расчетов вольт-амперных характеристик HEMT-транзисторов на основе GaN. Проведено сравнение вольтамперных характеристик HEMT-транзисторов при различной толщине GaN и различных концентрациях ...
Луценко, Евгений Викторович +2 more
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Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance
Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq +3 more
openaire +1 more source
Low-Leakage High-Breakdown Laterally Integrated HEMT-LED via n-GaN Electrode
, 2016 We report lateral integration of an InGaN/GaN light-emitting diode (LED) and an AlGaN/GaN high electron mobility transistor (HEMT) via the epitaxial layers.
Liu, Chao +3 more
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Characterization of the hysteresis in the output capacitance of GaN HEMT power devices
embargoed_20280909Experimental research regarding the hysteresis phenomena in the output capacitance of different GaN HEMT devices with the objective of better understanding when this non ideality is dominant and if there can be possible circuital ...
DE BONI, DAMIANO
core
Simulation of Quasi-Vertical E-Mode GaN HEMT on Si Substrate
Gallium Nitride (GaN) power devices are confronting the critical challenge of evolving from lateral to vertical architectures to achieve higher performance.
Liang, Guangkai +7 more
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Optoelectronic devices on AlGaN/GaN HEMT platform
, 2016 Integration of a photon source into the AlGaN/GaN high election mobility transistor (HEMT) platform will realize the functionality of on-chip optical pumping of deep electron traps which suppress the dynamic performances of power HEMTs. Here, we report a
Li, Baikui +3 more
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MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
, 2006 AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition.
Li Jianping +11 more
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