Results 101 to 110 of about 70,189 (251)

Room Temperature Rejuvenation Technology for Irradiated Gallium Nitride Transistors

Advanced Materials Technologies, Volume 10, Issue 24, December 17, 2025.
High temperature annealing has been the main defect mitigation technology since the Bronze age. We propose a room temperatureannealing technique that could be effective for electrically conducting materials. The new technique is demonstrated on a Gallium Nitride high electron mobility transistor undergoing radiation damage.
Md Hafijur Rahman, Nahid Sultan Al‐Mamun, Sergei P. Stepanoff, Aman Haque, Fan Ren, Stephen J. Pearton, Douglas E. Wolfe   +6 more
wiley   +1 more source

Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

Journal of Physics Communications
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin   +7 more
doaj   +1 more source

High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile

IEEE Journal of the Electron Devices Society
$0.5~\mu $ m enhancement-mode (E-mode) p-GaN $\Gamma $ -gate RF HEMT with engineered Mg doping profile in p-GaN layer was studied for high power amplifier application.
Hsien-Chin Chiu, Chong-Rong Huang, Chia-Han Lin, Chia-Hao Yu, Hsuan-Ling Kao, Shinn-Yn Lin, Barry Lin   +6 more
doaj   +1 more source

Normally-off GaN HEMTs [PDF]

, 2016
As silicon transistors have become a staple in everyday usages, other semiconductor materials (specifically III-V materials) are being researched to determine how their differing physical properties can be harnessed toward even better devices or ...
Tsai, Philip
core  

Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage

Journal of Science: Advanced Materials and Devices
A novel AlGaN/GaN HEMT is proposed to improve its single event transient (SET) effect and breakdown characteristics. The device features an AlGaN back barrier layer and a buried P-GaN island in the back barrier layer (BP-HEMT).
Shuxiang Sun, Xintong Xie, Pengfei Zhang, Zhijia Zhao, Jie Wei, Xiaorong Luo   +5 more
doaj   +1 more source

5 Watt GaN HEMT Power Amplifier for LTE [PDF]

, 2014
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier.
Collado, A., Georgiadis, A., Niotaki, K., Vardakas, J.   +3 more
core  

Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs

IEEE Journal of the Electron Devices Society
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) feature low ON resistance and low gate-input capacitance, so that they can serves as power switches with switching frequency from several MHz to tens of MHz level.
Ziheng Liu, Jiayin He, Hongjie Peng, Ju Gao, Wenbo Xia, Chengkang Ao, Jinyan Wang, Maojun Wang, Jin Wei, Yong Xie   +9 more
doaj   +1 more source

Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs

, 2019
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain.
Dolmanan, Surani B., Kumar, Sandeep, Muralidharan, Rangarajan, Nath, Digbijoy N., Tripathy, Sudhiranjan   +4 more
core   +1 more source

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

IEEE Journal of the Electron Devices Society
In this work, we investigated the stability of a ${p}$ -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit.
Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu   +14 more
doaj   +1 more source

Co-optimized e-mode AlGaN/GaN HEMT with composite p-GaN recessed cap and etched doped buffer for simultaneous DC and RF performance enhancement [PDF]

Serbian Journal of Electrical Engineering
This study presents a theoretical analysis of the DC and RF characteristics of enhancement mode (E-mode) AlGaN/GaN High Electron Mobility Transistor (HEMT) utilizing symbiotic integration of advanced techniques e.g. composite gate structure with slightly
Al Fahad Abdullah, Jawad Md. Nafis, Talukder Arnab, Rahman Ifty Mohaiminur, Kabir Md. Maharaj   +4 more
doaj   +1 more source