Results 111 to 120 of about 70,189 (251)

Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification

, 2009
In this article, we discuss the accuracy of behavioral models in simulating the intermodulation distortion (IMD) of microwave GaN-based high-power amplifiers in the presence of strong electrothermal (ET) feedback.
Camarchia, Vittorio, Cappelluti, Federica, Donati Guerrieri, Simona, Ghione, Giovanni, Lima, E.G., Pirola, Marco, Quaglia, Roberto   +6 more
core   +1 more source

Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance

Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul   +3 more
openaire   +1 more source

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

ECS Journal of Solid State Science and Technology
This study introduces a novel p-GaN/AlGaN/GaN heterostructure wafer, implementing a unique p-type GaN gate AlGaN/GaN HEMT configuration. In this design, the p-GaN region extends toward the drain, eliminating the need for a gate electrode.
Krishna Sai Sriramadasu, Y. Hsin
semanticscholar   +1 more source

Simulation and optimization of enhanced back-gated GaN-based HEMT ultraviolet photodetector with a high photo-to-dark current ratio

AIP Advances
In this work, the performance of an innovative structure of an enhanced back-gated GaN-based HEMT ultraviolet photodetector is investigated using Silvaco Atlas.
Wulong Yuan, Xianyun Liu, Di Yang, Jun Yao, Chenglong Lu   +4 more
doaj   +1 more source

In-situ S/TEM DC biasing of p-GaN/AlGaN/GaN heterostructure for E-mode GaN HEMT devices

Engineering Research Express
This work describes an in-situ electrical DC bias study of the E-mode GaN high electron mobility transistor (HEMT) device. A single transistor structure is biased and studied in real-time.
A. Mehta, Xiangyu Zhu, S. Shichijo, Moon J Kim   +3 more
semanticscholar   +1 more source

Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis [PDF]

, 2012
Bertazzi, Francesco, Bonani, Fabrizio, Donati Guerrieri, Simona, Ghione, Giovanni   +3 more
core   +1 more source

Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices. [PDF]

Micromachines (Basel)
Liu L, Zhen Y, Li S, Pang B, Zeng K.
europepmc   +1 more source

The effect of baseband impedance termination on the linearity of GaN HEMTs [PDF]

, 2010
Akmal, M, Beach, MA, Ben Smida, S, Benedikt, J, Carrubba, V, Cripps, S, Lees, J, McGeehan, JP, Morris, KA, Tasker, P, Woodington, S   +10 more
core   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]

ACS Omega
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc   +1 more source