Results 111 to 120 of about 25,575,016 (220)

Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

, 2015
We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED).
Liu, Chao, Lau, Kei May, Ma, Jun, Liu, Zhaojun, Huang, Tongde   +4 more
core   +1 more source

Simulation and optimization of enhanced back-gated GaN-based HEMT ultraviolet photodetector with a high photo-to-dark current ratio

AIP Advances
In this work, the performance of an innovative structure of an enhanced back-gated GaN-based HEMT ultraviolet photodetector is investigated using Silvaco Atlas.
Wulong Yuan, Xianyun Liu, Di Yang, Jun Yao, Chenglong Lu   +4 more
doaj   +1 more source

A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design

, 2008
We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate.
Chen Zhigang, Zhang Renping, Yang Fuhua, Li Jinmin, Luo Weijun, Wang Xiaoliang, Zhang Yang   +6 more
core  

E-Mode p-GaN Gate Punch-Through HEMT with Robust Non-Destructive Drain Breakdown

This work presents an E-mode p-GaN gate punch-through HEMT (PT-HEMT) which could achieve repetitive non-destructive breakdown, addressing the long-standing issue in conventional GaN HEMTs - the lack of avalanche robustness.
Lao, Yunhong, Liu, Sihang, Wei, Jin, Wang, Maojun, Chen, Kevin J., Yang, Han, Yang, Xuelin, Shen, Bo, Yu, Jingjing, Yang, Junjie   +9 more
core   +1 more source

Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT

, 2015
session posterInternational audienceIn order to optimize the Ron, we have studied the influence of epitaxy and fluorine based Si3N4 etching on the 2DEG properties of AlGaN/GaN ...
Morvan, E., Bano, Edwige, Leroux, C., Ghibaudo, G., M. Charles, G. Reimbold, J. Lehmann, E. Morvan, Charles, M., C. Leroux, E. Bano, A. Torres, G. Ghibaudo, Lehmann, J., Reimbold, G., Torres, A.   +15 more
core   +1 more source

A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors.
Wei-Hua Chieng, Ching-Yao Liu, Chih-Chiang Wu, Yueh-Tsung Shieh, Edward Yi Chang, Guo-Bin Wang   +5 more
core  

ALD grown AZO contacts for AlGaN/GaN HEMT Device Applications

, 2020
GaN-based high electron mobility transistor (HEMT) is a promising candidate for high-power and high-frequency applications due to it unique material properties.
Tugrul, Deniz, Esen, Hulya, Özbay, Ekmel, Imer, Muhsine Bilge, Cakmak, Huseyin, Yilmaz, Dogan   +5 more
core  

High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p‑GaN Layer

GaN, due to its large band gap and high carrier mobility, has been widely used in fast-response ultraviolet (UV) photodetectors (PDs). The existing junction-based and two-dimensional electron gas (2DEG)-based devices have different focuses on the ...
Chuankai Liu (11005279), Yu Wang (12152), Wei Gao (2085), Xiaozhou Wang (9573339), Hao Qian (154985), Zhaoqiang Zheng (1465447), Lixiang Han (11212586), Hangzan Liu (16648191), Jingbo Li (124294)   +8 more
core   +1 more source

Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface

The narrow gate overvoltage margin of classical enhancement-mode p-gate GaN high electron mobility transistors (HEMT). is a major concern in both soft and hard switching applications.
Wang, Bixuan, Mukherjee, Kalparupa, Zhang, Yuhao, Longobardi, Giorgia, Efthymiou, Loizos, Song, Qihao, Popa, Daniel, Udrea, Florin   +7 more
core   +1 more source

Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices. [PDF]

Micromachines (Basel)
Liu L, Zhen Y, Li S, Pang B, Zeng K.
europepmc   +1 more source