Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses. [PDF]
Micromachines (Basel)Xing D, Liu H, Su M, Liu X, Liu C.
europepmc +1 more source
Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Materials (Basel)Weis M.
europepmc +1 more source
Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]
Sci RepWu TL +5 more
europepmc +1 more source
Self-Calibrating TSEP for Junction Temperature and RUL Prediction in GaN HEMTs. [PDF]
Nanomaterials (Basel)Cui Y +6 more
europepmc +1 more source
Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. [PDF]
Micromachines (Basel)Lu H +8 more
europepmc +1 more source
The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]
Micromachines (Basel)Shen Z +10 more
europepmc +1 more source
Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]
Micromachines (Basel)Li Y, Huang Y, Li J, Sun H, Guo Z.
europepmc +1 more source
Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]
Micromachines (Basel)Chuang YT, Tumilty N.
europepmc +1 more source
Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]
Micromachines (Basel)Chuang YT, Tumilty N, Wu TL.
europepmc +1 more source
The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor. [PDF]
Micromachines (Basel)Chang PH +4 more
europepmc +1 more source