Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]
Zhao H +6 more
europepmc +1 more source
Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]
Pu T, Li X, Li L, Ao JP.
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Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]
Pan J +8 more
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Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]
Kshatri SS +4 more
europepmc +1 more source
Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]
Omar A, Loan SA.
europepmc +1 more source
Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc +1 more source
Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. [PDF]
Moscotin M +5 more
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Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc +1 more source
Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]
Wang L +10 more
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Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications. [PDF]
Zhang J +7 more
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