Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication. [PDF]
Yin Y, Fan Q, Ni X, Guo C, Gu X.
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Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure. [PDF]
Hao L +6 more
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Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD. [PDF]
Yang Y +10 more
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Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate. [PDF]
Kim B, Park SH.
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Using both faces of polar semiconductor wafers for functional devices. [PDF]
van Deurzen L +10 more
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Influence of LPCVD-Si<sub>3</sub>N<sub>4</sub> Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]
Jiang G +8 more
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Quantum Channel Extreme Bandgap AlGaN HEMT. [PDF]
Shur M +5 more
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On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs. [PDF]
Giorgino G +13 more
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Numerical Investigation on Electrothermal Performance of AlGaN/GaN HEMTs with Nanocrystalline Diamond/SiNx Trench Dual-Passivation Layers. [PDF]
Wang P +9 more
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