Results 151 to 160 of about 25,575,016 (220)

Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]

Sci Rep
Wu TL, Ho HJ, Liu CW, Singh SK, Chen YC, Chen HW.   +5 more
europepmc   +1 more source

Effect of Dual Al₂O₃ MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]

Micromachines (Basel)
Li Y, Huang Y, Li J, Sun H, Guo Z.
europepmc   +1 more source

Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. [PDF]

Micromachines (Basel)
Lu H, Hao X, Zhang Y, Yang L, Hou B, Zhang M, Wu M, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Quasi-Vertical GaN-Based Trench Gate MOSFETs Treated with Fluorine-Plasma. [PDF]

Micromachines (Basel)
Zhang P, Li DY, Xu JR, Chang QY, Hou B, Xi H, Ma XH.   +6 more
europepmc   +1 more source

Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]

Materials (Basel)
Weis M.
europepmc   +1 more source

The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]

Micromachines (Basel)
Shen Z, Shi Y, Wu L, He L, Chen X, Chen Y, Zhao D, He J, Zhu G, Zeng H, Lu G.   +10 more
europepmc   +1 more source

Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N.
europepmc   +1 more source

The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel)
Chang PH, Huang CR, Liu CH, Lee KW, Chiu HC.   +4 more
europepmc   +1 more source

Design and Application of p-AlGaN Short Period Superlattice. [PDF]

Micromachines (Basel)
Liu Y, Chen C, Zhou X, Li P, Yang B, Zhang Y, Bai J.   +6 more
europepmc   +1 more source