Results 171 to 180 of about 25,575,016 (220)

Dynamic Threshold Voltage in $p$-GaN Gate HEMT

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019
The $p$ -GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage ( $\boldsymbol{V}_{\mathbf{th}}$ ) of the device is found to have a dynamic nature. When the device experiences a high drain voltage $V_{\text{DSQ}}$ , the gate-to-drain capacitance $C_{\text{GD}}$ is charged to $\boldsymbol{Q}_{\mathbf{GD ...
Jin Wei, Han Xu, Ruiliang Xie, Meng Zhang, Hanxing Wang, Yuru Wang, Kailun Zhong, Mengyuan Hua, Jiabei He, Kevin J. Chen   +9 more
openaire   +1 more source

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

SPIE Proceedings, 2017
GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase.
MENEGHESSO, GAUDENZIO, MENEGHINI, MATTEO, ROSSETTO, ISABELLA, CANATO, ELEONORA, Bartholomeus, J., DE SANTI, CARLO, TRIVELLIN, NICOLA, ZANONI, ENRICO   +7 more
openaire   +1 more source

Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020
Gate reliability and reverse-bias-stress-induced $V$ TH instability issues were investigated in the E-mode p-GaN gate HEMTs. A GaN-based p-n junction gate (PNJ) HEMT featuring an $n$ -GaN/ $p$ -GaN/AlGaN/GaN gate stack was proposed to effectively reduce the gate leakage and enlarge safe gate operation bias region of the p-GaN gate devices. The $V$
Mengyuan Hua, Chengcai Wang, Junting Chen, Li Zhang, Zheyang Zheng, Kevin J. Chen   +5 more
openaire   +1 more source

A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs

IEEE Transactions on Electron Devices, 2020
This article presents a study on the short-circuit (SC) instability of p-doped gate gallium nitride (p-GaN) high-electron-mobility transistors (HEMTs). Under SC condition, self-sustained oscillation occurs when a package stray inductance is introduced in a common source. The SC oscillation features some unique characteristics.
Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace   +4 more
openaire   +2 more sources

High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain

Applied Physics Letters, 2021
In this Letter, the p-GaN high electron mobility transistor (HEMT) with hybrid drain of recessed Schottky (RS) and p-GaN isolation blocks' drain (HSP drain) is proposed and fabricated for good reverse blocking capability. The related operation mechanism has been investigated and revealed.
Haiyong Wang, Wei Mao, Shenglei Zhao, Beiluan Gao, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao   +9 more
openaire   +1 more source

Review of technology for normally-off HEMTs with p-GaN gate

Materials Science in Semiconductor Processing, 2018
Owing to the high carrier density and high electron mobility of the two dimensional electron gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are suitable devices for high power and high frequency applications. Clearly, the presence of the 2DEG at the interface of AlGaN/GaN heterostructures makes HEMTs intrinsically
G Greco, F Iucolano, F Roccaforte
openaire   +3 more sources

Influence of Temperature on p-GaN HEMT for High Power Application

2020 5th International Conference on Devices, Circuits and Systems (ICDCS), 2020
In this work, we study the influence of temperature on the p-GaN gate (with/without spacer) enhancement mode HEMT. First, the HEMT structure is designed with a p-type gate and its DC characteristics have been studied at room temperature (R T ). It is observed that on-current increases significantly (1.2 times high) when the spacer layer is removed. The
Ninita Geddam, Snega B, Adhithan Pon, Arkaprava Bhattacharyya, Ramesh R   +4 more
openaire   +1 more source

Reverse Blocking HEMTs with Stepped P-GaN Drain

2021 International Conference on IC Design and Technology (ICICDT), 2021
Zhuocheng Wang, Ruize Sun
openaire   +1 more source

A Novel Digital Etch Technique for p-GaN Gate HEMT

2018 IEEE International Conference on Semiconductor Electronics (ICSE), 2018
We demonstrate the digital etching (DE) process to fabricated E-mode p-GaN/AIGaN/GaN HEMT. DE process comprising low power oxygen (02) plasma oxidizing and low power boron trichloride (BCl 3 ) plasma etching to selectively remove p-GaN layer. The atomic layer etching (ALE) has an etching rate of 1.62 nm/cycle to achieved depth of 70nm.
Yuan Lin, Yueh Chin Lin, Franky Lumbantoruan, Chang Fu Dec, Burhanuddin Yeop Majilis, Edward Yi Chang   +5 more
openaire   +1 more source

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo   +3 more
openaire   +1 more source