Results 171 to 180 of about 70,189 (251)

Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020
This paper shows the electrostatic discharge (ESD) behavior of p-GaN HEMTs. Based on transmission line pulse (TLP) testing, the ESD characteristics (stressed: drain versus source, drain versus gate, gate versus source, drain to substrate) are comprehensively evaluated, and we found the following results: (1) the gate of p-GaN HEMTs is most prone to ...
Yajie Xin, Wanjun Chen, Ruize Sun, Yijun Shi, Chao Liu, Yun Xia, Fangzhou Wang, Xiaorui Xu, Qi Shi, Yuan Wang, Xiaochuan Deng, Qi Zhou, Zhaoji Li, Bo Zhang   +13 more
openaire   +1 more source

p-GaN/AlGaN/GaN Enhancement-Mode HEMTs

2006 64th Device Research Conference, 2006
GaN-based enhancement-mode (E-mode) HEMTs are attracting significant interest for integration of control circuitry and for the added safety of a normally-off device in power switching applications. While previous work reports excellent performance by gate-recessing1 and Fluorine-based plasma treatment2, the Schottky gate turn-on voltage of these ...
C. S. SHU, CHINI, Alessandro, Y. FU, C. POBLENZ, J. S. SPECK, U. K. MISHRA   +5 more
openaire   +1 more source

Adapted temperature calibration for Schottky p-GaN power HEMTs

ISPS'23 Proceedings, 2023
The determination of the junction temperature in power semiconductor devices is an important but challenging task. For GaN HEMTs, no universal temperature sensitive electrical parameter (TSEP) is available. In this study, different GaN HEMTs with Schottky p-GaN gate were subjected to stress by positive gate bias and temperature.
Maximilian Goller, Jörg Franke, Max Fischer, Samir Mouhoubi, Gilberto Curatola, Josef Lutz, Thomas Basler   +6 more
openaire   +1 more source

A Novel Normally-off Laterally Coupled p-GaN Gate HEMT

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021
In this paper, a novel laterally coupled p-GaN gate (LCPG) structure have been implemented by the selectively hydrogen plasma treatment to fabricate GaN-on-Si HEMTs with a high breakdown voltage (BV) and a low ON-resistance $(R_{\text{ON}})$ . Due to the coupled effect inside the LCPG, the 2DEG under the gate structure is depleted.
Xing Wei, Xiaodong Zhang, Chi Sun, Wenxin Tang, Tao He, Xuan Zhang, Guohao Yu, Liang Song, Wenkui Lin, Yong Cai, Baoshun Zhang   +10 more
openaire   +2 more sources

Double-Phase Adaptive Neural Network for Condition-Based Monitoring of p-GaN HEMT Under Repetitive Short-Circuit Stresses

IEEE Transactions on Instrumentation and Measurement, 2023
Recently, p-GaN gate high-electron-mobility transistors (HEMTs) have emerged as competitive participants for next-generation high-performance power supply applications.
Wenjuan Mei, Zhen Liu, Chaowu Pan, Ouhang Li, Yuanzhang Su, Qi Zhou   +5 more
semanticscholar   +1 more source

High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain

Applied Physics Letters, 2021
In this Letter, the p-GaN high electron mobility transistor (HEMT) with hybrid drain of recessed Schottky (RS) and p-GaN isolation blocks' drain (HSP drain) is proposed and fabricated for good reverse blocking capability. The related operation mechanism has been investigated and revealed.
Haiyong Wang, Wei Mao, Shenglei Zhao, Beiluan Gao, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao   +9 more
openaire   +1 more source

Simulation Study of a High Gate-to-Source ESD Robustness Power p-GaN HEMT With Self-Triggered Discharging Channel

IEEE Transactions on Electron Devices, 2021
This article proposes a novel power p-GaN high-electron-mobility transistor (HEMT) with self-triggered discharging channel to improve gate-to-source electrostatic discharge (ESD) robustness. The self-triggered discharging channel consists of a small-size
Yajie Xin, Wanjun Chen, Ruize Sun, Fangzhou Wang, Xiaochuan Deng, Zhaoji Li, Bo Zhang   +6 more
semanticscholar   +1 more source

Dynamic Threshold Voltage in $p$-GaN Gate HEMT

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019
The $p$ -GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage ( $\boldsymbol{V}_{\mathbf{th}}$ ) of the device is found to have a dynamic nature. When the device experiences a high drain voltage $V_{\text{DSQ}}$ , the gate-to-drain capacitance $C_{\text{GD}}$ is charged to $\boldsymbol{Q}_{\mathbf{GD ...
Jin Wei, Han Xu, Ruiliang Xie, Meng Zhang, Hanxing Wang, Yuru Wang, Kailun Zhong, Mengyuan Hua, Jiabei He, Kevin J. Chen   +9 more
openaire   +1 more source

Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions

2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2021
Power electronic systems based on gallium nitride (GaN) devices are expected to significantly reduce the power loss and increase the operating frequency. This makes GaN devices very promising for next-generation medium-low voltage power electronics, like
Jun Ye, L. Xuan, Yangyang Wu, Xiaochuan Deng, Zhiqiang Li, Bo Zhang   +5 more
semanticscholar   +1 more source

A New Simple and Low Cost Short Circuit Protection Method for p-GaN HEMT

2021 IEEE 2nd China International Youth Conference on Electrical Engineering (CIYCEE), 2021
The short circuit capability of gallium nitride high electron mobility transistor (GaN HEMT) exhibits great differences under different drain-source voltages, thus its short circuit protection is critical for practical applications. This paper proposes a
Xiaohua Zhan, Pengju Sun, Xuzhen Huang, Yan Wang   +3 more
semanticscholar   +1 more source