Results 161 to 170 of about 70,189 (251)
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Gate Reliability of p-GaN HEMT With Gate Metal Retraction
IEEE Transactions on Electron Devices, 2019In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and
A. N. Tallarico +6 more
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A Gaussian Doped p-GaN HEMT for Power Electronics Application
2024 IEEE Third International Conference on Power Electronics, Intelligent Control and Energy Systems (ICPEICES)This paper presents and investigates a novel p-GaN HEMT to enhance device performance in power electronics applications. The proposed device incorporates the Gaussian doping technique to introduce donor impurities into the GaN channel layer.
Tanvika Garg, Sumit Kale
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Power P-GaN HEMT Under Single and Multi-Pulse UIS Conditions
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2018In this paper we present the results of Unclamped Inductive Switching (UIS) measurements of power GaN HEMTs comprised of p-GaN gates. Typical test waveforms and basic description of effects during discharging period of inductor are presented and discussed. Also impact of repetitive UIS on electrical performance was analysed.
Jozef Kozarik +5 more
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Gate lifetime investigation at low temperature for p-GaN HEMT
Microelectronics ReliabilityM. Alam +9 more
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Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain
Superlattices and Microstructures, 2021Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang +9 more
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Enhanced performance of p-GaN HEMT via partial etched AlGaN
Microelectronics JournalQingxin Liu +4 more
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RF p-GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications
IEEE Electron Device Letters, 2023Low-noise amplification performance of an enhancement-mode p- GaN gate high electron mobility transistor (HEMT) is thoroughly investigated. Featuring a tungsten (W) gate metal and CMOS-compatible metal contacts to source/drain terminals, the device ...
Junmin Zhou +8 more
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The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT
Semiconductor Science and Technology, 2022Abstract In this paper, the influence of a lightly doped p-GaN (p−-GaN) cap layer on p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) (LDP-HEMTs) was investigated. No difference in output or off-state breakdown characteristics was observed, but there was a negative shift in threshold voltage (V TH).
Kai Liu +10 more
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Analysis of AlGaN/GaN Interface Traps in the Enhancement-mode p-GaN HEMT
2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT), 2023Interface trapping is a key factor in deteriorating the performance parameters of GaN high electron mobility transistors (HEMTs). This paper provides a comprehensive study related to AlGaN/GaN interface traps in p-GaN HEMT.
Priyanka Nautiyal +3 more
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IEEE Electron Device Letters, 2023
To reduce drain leakage current, carbon doping is introduced in the GaN layer of the p-GaN HEMT device. The focus of this study is on the discussion of the abnormal current behavior that occurs in the saturation region of carbon-doped p-GaN HEMT.
C. Yeh +12 more
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To reduce drain leakage current, carbon doping is introduced in the GaN layer of the p-GaN HEMT device. The focus of this study is on the discussion of the abnormal current behavior that occurs in the saturation region of carbon-doped p-GaN HEMT.
C. Yeh +12 more
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