Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]
Micromachines (Basel)Chuang YT, Tumilty N, Wu TL.
europepmc +1 more source
Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors. [PDF]
Nanomaterials (Basel)Wang H +9 more
europepmc +1 more source
High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. [PDF]
Micromachines (Basel)Du J +12 more
europepmc +1 more source
Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. [PDF]
Light Sci ApplChu C +7 more
europepmc +1 more source
Related searches:
The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT
Semiconductor Science and Technology, 2022Abstract In this paper, the influence of a lightly doped p-GaN (p−-GaN) cap layer on p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) (LDP-HEMTs) was investigated. No difference in output or off-state breakdown characteristics was observed, but there was a negative shift in threshold voltage (V TH).
Kai Liu +10 more
openaire +1 more source
Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020This paper shows the electrostatic discharge (ESD) behavior of p-GaN HEMTs. Based on transmission line pulse (TLP) testing, the ESD characteristics (stressed: drain versus source, drain versus gate, gate versus source, drain to substrate) are comprehensively evaluated, and we found the following results: (1) the gate of p-GaN HEMTs is most prone to ...
Yajie Xin +13 more
openaire +1 more source
Gate Reliability of p-GaN HEMT With Gate Metal Retraction
IEEE Transactions on Electron Devices, 2019In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and
A. N. Tallarico +6 more
openaire +2 more sources
Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain
Superlattices and Microstructures, 2021Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang +9 more
openaire +1 more source
Adapted temperature calibration for Schottky p-GaN power HEMTs
ISPS'23 Proceedings, 2023The determination of the junction temperature in power semiconductor devices is an important but challenging task. For GaN HEMTs, no universal temperature sensitive electrical parameter (TSEP) is available. In this study, different GaN HEMTs with Schottky p-GaN gate were subjected to stress by positive gate bias and temperature.
Maximilian Goller +6 more
openaire +1 more source
p-GaN/AlGaN/GaN Enhancement-Mode HEMTs
2006 64th Device Research Conference, 2006GaN-based enhancement-mode (E-mode) HEMTs are attracting significant interest for integration of control circuitry and for the added safety of a normally-off device in power switching applications. While previous work reports excellent performance by gate-recessing1 and Fluorine-based plasma treatment2, the Schottky gate turn-on voltage of these ...
C. S. SHU +5 more
openaire +1 more source