Results 181 to 190 of about 25,575,016 (220)
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Short-circuit capability in p-GaN HEMTs and GaN MISHEMTs
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017Gallium Nitride (GaN) Enhancement-mode High-Electron-Mobility Transistors (EHEMTs) are promising devices for motor drives. Hence, ensuring and gaining insight into their ruggedness against Short-Circuit (SC) faults become essential. Thus, SC stresses (types I and II) are studied for the first time in commercial EHEMTs with similar on-state resistance (∼
M. Fernandez +6 more
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AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer
MRS Advances, 2017In this study, AlGaN/GaN MIS-HEMTs with a p-GaN cap layer and ALD deposited Al2O3 gate insulator were fabricated. Devices with two different thicknesses of p-GaN cap layers were investigated and compared. AlGaN/GaN MIS-HEMT with an 8-nm p-GaN cap showed a better DC characteristics than device with a 5-nm p-GaN cap.
Che-Ching Hsu +3 more
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IEEE Transactions on Electron Devices, 2016
This paper reports on the behavior of Al/Ti/p-GaN interfaces as gate contacts for p-GaN/AlGaN/GaN normally off high electron mobility transistor (HEMTs), highlighting the impact of the thermal budget on the metal gate on the device characteristics. In fact, while the devices subjected to an annealing at 800 degrees C show a considerable high leakage ...
G Greco +5 more
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This paper reports on the behavior of Al/Ti/p-GaN interfaces as gate contacts for p-GaN/AlGaN/GaN normally off high electron mobility transistor (HEMTs), highlighting the impact of the thermal budget on the metal gate on the device characteristics. In fact, while the devices subjected to an annealing at 800 degrees C show a considerable high leakage ...
G Greco +5 more
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A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability
2023 Device Research Conference (DRC), 2023Lingyan Shen +3 more
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Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain
IEEE Electron Device Letters, 2022Ruize Sun +10 more
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2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
Microelectronic Engineering, 2021Md Abdul Kaium Khan +2 more
exaly
Simulation Study of p-GaN Gate HEMTs With Dielectric Interlayer
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023Shiyin Zhang +3 more
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Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022Yan Cheng +6 more
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Study of TaN-Gated p-GaN E-Mode HEMT
IEEE Transactions on Electron Devices, 2023Rijo Baby +5 more
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Simulation model for a GaN-HEMT with Schottky p-GaN-Gate
2021Neuartige Leistungstransistoren mit weitem Bandabstand aus den Materialien Siliziumkarbid (SiC) und Galliumnitrid (GaN) bieten im Vergleich zu Silizium-Schaltern die Möglichkeit, Systeme mit gesteigerten Schaltfrequenzen zu realisieren. Aufgrund der auftretenden schnellen Schalt- und Stromanstiegsgeschwindigkeiten steigt der Einfluss der parasitären ...
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