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Simulation Study of a p-GaN HEMT With an Integrated Schottky Barrier Diode
IEEE Transactions on Electron Devices, 2021In this article, a novel ${p}$ -GaN high-electron-mobility transistor (HEMT) with a built-in Schottky barrier diode (SBD) is proposed and investigated by TCAD simulation.
Bo Yi +5 more
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Single Pulse Unclamped-Inductive-Switching Induced Failure and Analysis for 650 V p-GaN HEMT
IEEE transactions on power electronics, 2020This letter firstly reveals the single pulse unclamped-inductive-switching (UIS) withstanding physics and failure mechanism for p-GaN high electron mobility transistor (HEMT) with Schottky type gate contact.
Siyang Liu +8 more
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IEEE transactions on power electronics
p-GaN high electron mobility transistors (HEMTs) are favored for bridge topology applications where they act as the freewheeling transistors to commute the current during the dead time.
Yufei Tian +9 more
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p-GaN high electron mobility transistors (HEMTs) are favored for bridge topology applications where they act as the freewheeling transistors to commute the current during the dead time.
Yufei Tian +9 more
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Analysis of the Formation of the Off-State Leakage Current in p-GaN HEMT
IEEE Transactions on Electron DevicesIn this study, the off-state leakage current ( ${I} _{\text {off}}$ ) of p-GaN high electron mobility transistor (HEMT) is analyzed. At low drain bias approximately below 100 V, the leakage is dominated by the punchthrough leakage current from the source
Ya-Huan Lee +10 more
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GaN HEMTs with p-GaN gate: field- and time-dependent degradation
SPIE Proceedings, 2017GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase.
MENEGHESSO, GAUDENZIO +7 more
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Gate Reliability and VTH Stability Investigations of p-GaN HEMTs
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020Gate reliability and reverse-bias-stress-induced $V$ TH instability issues were investigated in the E-mode p-GaN gate HEMTs. A GaN-based p-n junction gate (PNJ) HEMT featuring an $n$ -GaN/ $p$ -GaN/AlGaN/GaN gate stack was proposed to effectively reduce the gate leakage and enlarge safe gate operation bias region of the p-GaN gate devices. The $V$
Mengyuan Hua +5 more
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IEEE Electron Device Letters
In this letter, we proposed a p-GaN HEMT with a double barriers cap layer (DB-HEMT) using an AlN/GaN/AlN/ p-GaN gate stack. Double barriers are formed at the gate/AlN and GaN/AlN interfaces, introducing an additional barrier in the p-GaN layer to ...
Kai Liu +8 more
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In this letter, we proposed a p-GaN HEMT with a double barriers cap layer (DB-HEMT) using an AlN/GaN/AlN/ p-GaN gate stack. Double barriers are formed at the gate/AlN and GaN/AlN interfaces, introducing an additional barrier in the p-GaN layer to ...
Kai Liu +8 more
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International Symposium on Power Semiconductor Devices and IC's, 2020
In this work, threshold voltage ($V _{\mathbf{TH}}$) stability under long-term off-state stress with various drain-to-source voltages was characterized in the Schottky type p-GaN gate high electron mobility transistors (HEMTs).
Junting Chen +5 more
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In this work, threshold voltage ($V _{\mathbf{TH}}$) stability under long-term off-state stress with various drain-to-source voltages was characterized in the Schottky type p-GaN gate high electron mobility transistors (HEMTs).
Junting Chen +5 more
semanticscholar +1 more source
High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device
IET Power Electronics, 2020High-temperature electrical performances of enhancement-mode (E-mode) high electron mobility transistor with p-type Gallium Nitride (GaN) gate cap are evaluated here. The physics-based mechanisms behind the behaviours are also analysed by the simulations
Sheng Li +8 more
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Enhanced Breakdown Voltage of p-GaN HEMT with a Lateral Gradient in Barrier Layer Component
International Symposium on Radio-Frequency Integration TechnologyIn this paper, an optimized enhanced-mode p-GaN high electron mobility transistor (p-GaN HEMT) is proposed, in which the barrier layer is set into a composite structure with a lateral gradient of Aluminum component (LGC) from the drain edge under the ...
Wei Zhi +7 more
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