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Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer
SemiconductorsP. S. Sreelekshmi, Jobymol Jacob
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Gate Reliability of enhanced-mode p-GaN HEMTs
This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua.openaire +1 more source
Gate Circuit improves p-GaN HEMT VTH reliability
2023Liu, Xinke, Chen, Zengfa, Zhong, Ze
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A Physics-Based Analytic Model for p-GaN HEMTs
IEEE Transactions on Electron DevicesZarak Bhat, Sheikh Aamir Ahsan
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Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions
IEEE Transactions on Electron Devices, 2022Qianshu Wu +11 more
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Wafer-scale high sensitive UV photodetectors based on novel AlGaN/n-GaN/p-GaN heterostructure HEMT
Applied Surface Science, 2023Lixiang Han, Chuankai Liu, Xiaozhou Wang
exaly
Evaluation and Application of 600 V GaN HEMT in Cascode Structure
IEEE Transactions on Power Electronics, 2014Fred C. Lee, Qiang Li, Xiucheng Huang
exaly
Doping Engineering of p-GaN Gate HEMTs on Si
2026 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)Jun-Zhe Wang +5 more
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60Co γ射线辐射对AlGaN/GaN HEMT器件的影响
Wuli Xuebao/Acta Physica Sinica, 2009Yue Hao, Jin-Cheng Zhang, Ma Xiao-Hua
exaly