Results 191 to 200 of about 70,189 (251)

Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer

Semiconductor Science and Technology
In this paper,bulk polarization mechanism and radiation simulation of the Al component gradient buffer layer (GBL) and constant buffer layer (CBL) of p-GaN HEMT (p-GaN GBL-HEMT and p-GaN CBL-HEMT) are analyzed and studied.
Shi-Jin Liu, Ying Wang, Xin-xing Fei, Chenghao Yu, Haomin Guo   +4 more
semanticscholar   +1 more source

Improved breakdown voltage and threshold voltage in normally-off p-GaN HEMT with L-shape gate metal and MIS structure

Asia Conference on Electronic Technology
A novel p-GaN high-electron-mobility-transistor (HEMT) with a “L” shape gate metal and metal-insulatorsemiconductor (MIS) structure (L-HEMT) was proposed to enhance breakdown voltage and threshold voltage in the conventional normally-off p-GaN HEMT (C ...
Jun Yang, Licheng Wu, Chuanmin Wang
semanticscholar   +1 more source

Investigation of Time-Dependent VTH Instability Under Reverse-bias Stress in Schottky Gate p-GaN HEMT

2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), 2020
This article proposes a model for threshold voltage (VTH) instability induced by reverse-bias stress (i.e. drain-to-source voltage at off-state) in Schottky gate p-GaN high electron mobility transistors (HEMTs).
Junting Chen, Chengcai Wang, Jiali Jiang, M. Hua   +3 more
semanticscholar   +1 more source

AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer

MRS Advances, 2017
In this study, AlGaN/GaN MIS-HEMTs with a p-GaN cap layer and ALD deposited Al2O3 gate insulator were fabricated. Devices with two different thicknesses of p-GaN cap layers were investigated and compared. AlGaN/GaN MIS-HEMT with an 8-nm p-GaN cap showed a better DC characteristics than device with a 5-nm p-GaN cap.
Che-Ching Hsu, Pei-Chien Shen, Yi-Nan Zhong, Yue-Ming Hsin   +3 more
openaire   +1 more source

Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

IEEE Electron Device Letters, 2013
A pathway to increase the threshold voltage $(V_{\rm TH})$ of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the p-GaN layer at the gate interface is one of the key controlling factors of $V_{\rm TH}$ in p-GaN gate HEMTs.
Injun Hwang, Jaejoon Oh, Hyuk Soon Choi, Jongseob Kim, Hyoji Choi, Joonyong Kim, Soogine Chong, Jaikwang Shin, U-In Chung   +8 more
openaire   +1 more source

Degradation of Power P-GaN HEMT Under High Voltage Switching

2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2018
This paper reports on an impact of repetitive high voltage hard switching on electrical performance of p-type gate normally off GaN power HEMTs. Hard-switching-related failure and degradation in such power p-GaN HEMTs is currently intensively studied since introduction of p-type gate introduces potentially new/specific effects which were not ...
Juraj Marek, Jozef Kozarik, Martin Jagelka, Jakub Drobny, Ales Chvala, Daniel Donoval, Lubica Stuchlikova   +6 more
openaire   +1 more source

Gate stress induced threshold voltage instability and its significance for reliable threshold voltage measurement in p-GaN HEMT

IEEE Workshop on Wide Bandgap Power Devices and Applications, 2019
In this study we investigate the effect induced by standard transfer characteristic measurement (ID-VG) which is used to quantify threshold voltage (Vth), on threshold voltage (Vth) itself and a technique to mitigate this effect for a reliable Vth ...
K. Murukesan, L. Efthymiou, F. Udrea
semanticscholar   +1 more source

Investigation on the Long-Term Reliability of High-Voltage p-GaN HEMT by Repetitively Transient Overcurrent

IEEE Transactions on Electron Devices, 2018
In this paper, the effects of repetitively transient overcurrent on the long-term reliability of commercial p-GaN high-electron-mobility transistors (HEMTs) are investigated by using RLC pulse-ring-down tests.
Yijun Shi, Wanjun Chen, Xingtao Cui, Maoling Li, Chao Liu, Yun Xia, Jia Li, Fangzhou Wang, Yajie Xin, Qi Zhou, Xiaochuan Deng, Zhaoji Li, Bo Zhang   +12 more
semanticscholar   +1 more source

Electrical Degradations of p-GaN HEMT under High Off-state Bias Stress with Negative Gate Voltage

International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2019
The shifts of electrical parameters for p-GaN high electron mobility transistor (HEMT) under high off-state bias stress with negative gate voltage are investigated in this paper. Comparing to the conventional off-state bias stress with zero gate voltage,
Chi Zhang, Sheng Li, Siyang Liu, Jiaxing Wei, Wangran Wu, Weifeng Sun   +5 more
semanticscholar   +1 more source

Short-circuit capability in p-GaN HEMTs and GaN MISHEMTs

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017
Gallium Nitride (GaN) Enhancement-mode High-Electron-Mobility Transistors (EHEMTs) are promising devices for motor drives. Hence, ensuring and gaining insight into their ruggedness against Short-Circuit (SC) faults become essential. Thus, SC stresses (types I and II) are studied for the first time in commercial EHEMTs with similar on-state resistance (∼
M. Fernandez, X. Perpina, M. Vellvehi, X. Jorda, J. Roig, F. Bauwens, M. Tack   +6 more
openaire   +1 more source