Results 211 to 220 of about 25,575,016 (220)
Some of the next articles are maybe not open access.

高击穿电压的AlGaN/GaN FP-HEMT研究与分析

Wuli Xuebao/Acta Physica Sinica, 2007
Yue Hao
exaly  

Gate lifetime investigation at low temperature for p-GaN HEMT

Microelectronics Reliability
M. Alam   +9 more
openaire   +1 more source

AlGaN表面坑状缺陷及GaN缓冲层位错缺陷对AlGaN/GaN HEMT电流崩塌效应的影响

Wuli Xuebao/Acta Physica Sinica, 2008
Yi Luo, Lai Wang, Yan-Jun Han
exaly  

Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study

Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Jean Paul Salvestrini   +2 more
exaly  

AlGaN/GaN HEMT器件直流扫描电流崩塌机理及其物理模型

Wuli Xuebao/Acta Physica Sinica, 2006
Yue Hao, Jin-Cheng Zhang, Zhang Jin-Feng
exaly  

A Gaussian Doped p-GaN HEMT for Power Electronics Application

2024 IEEE Third International Conference on Power Electronics, Intelligent Control and Energy Systems (ICPEICES)
Tanvika Garg, Sumit Kale
openaire   +1 more source

Nonsegmented PSpice Circuit Model of GaN HEMT With Simulation Convergence Consideration

IEEE Transactions on Industrial Electronics, 2017
Xingran Zhao   +2 more
exaly  

Methodology for Extrapolating the Lifetime of GaN HEMTs with p-GaN Gate

2026 IEEE International Reliability Physics Symposium (IRPS)
R. Fraccaroli   +14 more
openaire   +1 more source

P-GAN ENHANCEMENT MODE HEMTS WITH DOPANT DIFFUSION SPACER

2022
BEUMER MICHAEL   +5 more
openaire   +1 more source

Enhanced Gate Reliability and High Threshold Voltage p-GaN HEMT With p-NiO/p-GaN Heterojunction

2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Jinbing Wang   +11 more
openaire   +1 more source

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