Results 211 to 220 of about 70,189 (251)
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2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022
Ruize Sun +7 more
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Ruize Sun +7 more
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IEEE Electron Device Letters
In this work, high-performance ultraviolet (UV) phototransistors (PTs) based on the p-GaN/ AlGaN/GaN HEMT structure were reported. An innovative strategy making a tradeoff between the absorption thickness of the incident light and the retraction distance
Haiping Wang +9 more
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In this work, high-performance ultraviolet (UV) phototransistors (PTs) based on the p-GaN/ AlGaN/GaN HEMT structure were reported. An innovative strategy making a tradeoff between the absorption thickness of the incident light and the retraction distance
Haiping Wang +9 more
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Physica Status Solidi (a)
Herein, a metal/insulator/p‐GaN gate HEMT (MIP‐HEMT) with Si3N4 gate dielectric layer is fabricated. Compared to the conventional p‐GaN HEMT, the MIP‐HEMT has a higher threshold voltage (Vth) of 4.8 V and better gate leakage suppression. The mechanism of
Kuo Zhang +8 more
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Herein, a metal/insulator/p‐GaN gate HEMT (MIP‐HEMT) with Si3N4 gate dielectric layer is fabricated. Compared to the conventional p‐GaN HEMT, the MIP‐HEMT has a higher threshold voltage (Vth) of 4.8 V and better gate leakage suppression. The mechanism of
Kuo Zhang +8 more
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A Π-shaped p-GaN HEMT for reliable enhancement mode operation
Microelectronics and reliability, 2022K. Sehra +5 more
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A Novel Enhancement Mode GaN HEMT with MIS and p-GaN structure
2024 IEEE 9th International Conference for Convergence in Technology (I2CT)This paper reports a novel enhancement mode GaN HEMT designed to mitigate gate leakage current. The device combines a p-GaN layer with HfO2 layer beneath the metal.
Tanvika Garg, S. Kale
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International Symposium on Power Semiconductor Devices and IC's
A novel AlGaN/GaN HEMT based on an Island-Ohmic p-GaN gate (IO-PGaN) structure is proposed. Thanks to the Island-Ohmic, the “floating” p-GaN is connected with the gate terminal via the heavily doped p++-GaN island. Therefore, the net charges generated in
Xinyue Dai +9 more
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A novel AlGaN/GaN HEMT based on an Island-Ohmic p-GaN gate (IO-PGaN) structure is proposed. Thanks to the Island-Ohmic, the “floating” p-GaN is connected with the gate terminal via the heavily doped p++-GaN island. Therefore, the net charges generated in
Xinyue Dai +9 more
semanticscholar +1 more source
2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
Microelectronic Engineering, 2021Md. Abdul Kaium Khan +2 more
exaly
Simulation Study of p-GaN Gate HEMTs With Dielectric Interlayer
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023Shiyin Zhang +3 more
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The ESD Robustness of Schottky-Gate p-GaN HEMT Under Different States
IEEE Transactions on Electron DevicesYijun Shi +10 more
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Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022Yan Cheng +6 more
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