Results 211 to 220 of about 25,575,016 (220)
Some of the next articles are maybe not open access.
Gate lifetime investigation at low temperature for p-GaN HEMT
Microelectronics ReliabilityM. Alam +9 more
openaire +1 more source
AlGaN表面坑状缺陷及GaN缓冲层位错缺陷对AlGaN/GaN HEMT电流崩塌效应的影响
Wuli Xuebao/Acta Physica Sinica, 2008Yi Luo, Lai Wang, Yan-Jun Han
exaly
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Jean Paul Salvestrini +2 more
exaly
Jean Paul Salvestrini +2 more
exaly
AlGaN/GaN HEMT器件直流扫描电流崩塌机理及其物理模型
Wuli Xuebao/Acta Physica Sinica, 2006Yue Hao, Jin-Cheng Zhang, Zhang Jin-Feng
exaly
A Gaussian Doped p-GaN HEMT for Power Electronics Application
2024 IEEE Third International Conference on Power Electronics, Intelligent Control and Energy Systems (ICPEICES)Tanvika Garg, Sumit Kale
openaire +1 more source
Nonsegmented PSpice Circuit Model of GaN HEMT With Simulation Convergence Consideration
IEEE Transactions on Industrial Electronics, 2017Xingran Zhao +2 more
exaly
Methodology for Extrapolating the Lifetime of GaN HEMTs with p-GaN Gate
2026 IEEE International Reliability Physics Symposium (IRPS)R. Fraccaroli +14 more
openaire +1 more source
P-GAN ENHANCEMENT MODE HEMTS WITH DOPANT DIFFUSION SPACER
2022BEUMER MICHAEL +5 more
openaire +1 more source
Enhanced Gate Reliability and High Threshold Voltage p-GaN HEMT With p-NiO/p-GaN Heterojunction
2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)Jinbing Wang +11 more
openaire +1 more source

