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Evaluation and Application of 600 V GaN HEMT in Cascode Structure
IEEE Transactions on Power Electronics, 2014Xiucheng Huang, Zhengyang Liu, Qiang Li
exaly
HYDROGEN PLASMA TREATED P-GAN GATE HEMTS: DEVICE TO INTEGRATION
This thesis investigates the fabrication and reliability of a high electron mobility transistor (HEMT) integrated circuit (IC) platform for power conversion, emphasizing the advantages of Gallium Nitride (GaN) materials in power electronics. Highlighting GaN's superior physical and electrical properties over traditional materials, this work addresses ...openaire +1 more source
A Physics-Based Analytic Model for p-GaN HEMTs
IEEE Transactions on Electron DevicesZarak Bhat, Sheikh Aamir Ahsan
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Nonsegmented PSpice Circuit Model of GaN HEMT With Simulation Convergence Consideration
IEEE Transactions on Industrial Electronics, 2017Hong Li, Xingran Zhao, Xiaojie You
exaly
Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration
IEEE Transactions on Power Electronics, 2014Xiucheng Huang, Qiang Li, Zhengyang Liu
exaly
Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology
Physica Status Solidi (A) Applications and Materials Science, 2011Kevin J Chen, Chunhua Zhou
exaly
Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers
IEEE Electron Device Letters, 2016Huarui Sun, Firooz Faili, Martin Kuball
exaly

