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Evaluation and Application of 600 V GaN HEMT in Cascode Structure

IEEE Transactions on Power Electronics, 2014
Xiucheng Huang, Zhengyang Liu, Qiang Li
exaly  

HYDROGEN PLASMA TREATED P-GAN GATE HEMTS: DEVICE TO INTEGRATION

This thesis investigates the fabrication and reliability of a high electron mobility transistor (HEMT) integrated circuit (IC) platform for power conversion, emphasizing the advantages of Gallium Nitride (GaN) materials in power electronics. Highlighting GaN's superior physical and electrical properties over traditional materials, this work addresses ...
openaire   +1 more source

Diamond overgrown InAlN/GaN HEMT

Diamond and Related Materials, 2011
Christophe Gaquiere
exaly  

A Physics-Based Analytic Model for p-GaN HEMTs

IEEE Transactions on Electron Devices
Zarak Bhat, Sheikh Aamir Ahsan
openaire   +1 more source

Nonsegmented PSpice Circuit Model of GaN HEMT With Simulation Convergence Consideration

IEEE Transactions on Industrial Electronics, 2017
Hong Li, Xingran Zhao, Xiaojie You
exaly  

Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration

IEEE Transactions on Power Electronics, 2014
Xiucheng Huang, Qiang Li, Zhengyang Liu
exaly  

Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology

Physica Status Solidi (A) Applications and Materials Science, 2011
Kevin J Chen, Chunhua Zhou
exaly  

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

IEEE Electron Device Letters, 2016
Huarui Sun, Firooz Faili, Martin Kuball
exaly  

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