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Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Science China Information SciencesMao Jia +12 more
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Gate Reliability of enhanced-mode p-GaN HEMTs
This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua.openaire +1 more source
Wafer-scale high sensitive UV photodetectors based on novel AlGaN/n-GaN/p-GaN heterostructure HEMT
Applied Surface Science, 2023Wanglong Wu, Chuankai Liu, Lixiang Han
exaly
Physics-based Analytical Modeling of p-GaN/AlGaN/GaN HEMTs
2022 IEEE 19th India Council International Conference (INDICON), 2022Zarak Bhat, Sheikh Aamir Ahsan
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A Novel p-GaN HEMT with Superjunction Silicon Substrate for Improved Current Collapse
Micro and NanostructuresBo Feng +3 more
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An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps
IEEE Electron Device Letters, 2023Yanlin Wu, Maojun Wang, Muqin Nuo
exaly
Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions
IEEE Transactions on Electron Devices, 2022Qianshu Wu +11 more
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Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer
SemiconductorsP. S. Sreelekshmi, Jobymol Jacob
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