Results 201 to 210 of about 25,575,016 (220)

Enhanced performance of p-GaN HEMT via partial etched AlGaN

Microelectronics Journal
Qingxin Liu, Shuang Wu, Kailin Ren, Luqiao Yin, Jianhua Zhang   +4 more
openaire   +1 more source

F离子注入新型Al0.25Ga0.75 N/GaN HEMT 器件耐压分析

Wuli Xuebao/Acta Physica Sinica, 2012
Duan Bao-Xing, Yang Yin-Tang
exaly  

Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

Superlattices and Microstructures, 2018
Ajayan J, David Nirmal, Prajoon P
exaly  

High-periphery GaN HEMT modeling up to 65 GHz and 200 °C

Solid-State Electronics, 2019
Valeria Vadala, Giovanni Crupi, Antonio Raffo   +2 more
exaly  

高场应力及栅应力下AlGaN/GaN HEMT器件退化研究

Wuli Xuebao/Acta Physica Sinica, 2009
Yue Hao, Jin-Cheng Zhang, Ma Xiao-Hua
exaly  

场板结构AlGaN/GaN HEMT的电流崩塌机理

Wuli Xuebao/Acta Physica Sinica, 2008
Yue Hao
exaly  

Diamond overgrown InAlN/GaN HEMT

Diamond and Related Materials, 2011
Michele Dipalo, Christophe Gaquière, Nicolas Grandjean   +2 more
exaly  

AlGaN/GaN hybrid MOS-HEMT analytical mobility model

Solid-State Electronics, 2011
Amador Perez-Tomas, A Fontseré
exaly  

Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究

Wuli Xuebao/Acta Physica Sinica, 2009
Yue Hao, Jin-Cheng Zhang, Ma Xiao-Hua
exaly  

Study of p-GaN Gate HEMT with ALN Cap Layer

2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
Mingzhi Huang, Kai Liu, Chong Wang, Ziheng Yu   +3 more
openaire   +1 more source