Results 201 to 210 of about 70,189 (251)

Reverse Blocking HEMTs with Stepped P-GaN Drain

2021 International Conference on IC Design and Technology (ICICDT), 2021
Zhuocheng Wang, Ruize Sun
openaire   +1 more source

A Novel Digital Etch Technique for p-GaN Gate HEMT

2018 IEEE International Conference on Semiconductor Electronics (ICSE), 2018
We demonstrate the digital etching (DE) process to fabricated E-mode p-GaN/AIGaN/GaN HEMT. DE process comprising low power oxygen (02) plasma oxidizing and low power boron trichloride (BCl 3 ) plasma etching to selectively remove p-GaN layer. The atomic layer etching (ALE) has an etching rate of 1.62 nm/cycle to achieved depth of 70nm.
Yuan Lin, Yueh Chin Lin, Franky Lumbantoruan, Chang Fu Dec, Burhanuddin Yeop Majilis, Edward Yi Chang   +5 more
openaire   +1 more source

Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

IEEE Electron Device Letters, 2022
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang   +10 more
openaire   +1 more source

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

Materials Science Forum, 2016
In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant ...
G Greco, F Iucolano, F Giannazzo, S Di Franco, D Corso, E Smecca, A Alberti, A Patti, F Roccaforte   +8 more
openaire   +2 more sources

Study of TaN-Gated p-GaN E-Mode HEMT

IEEE Transactions on Electron Devices, 2023
Rijo Baby, K. Reshma, Hareesh Chandrasekar, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath   +5 more
openaire   +1 more source

Understanding Electrical Parameter Degradations of P-GaN HEMT Under Repetitive Short-Circuit Stresses

IEEE transactions on power electronics, 2021
Sheng Li, Siyang Liu, Chi Zhang, Le Qian, Chen Ge, Shuxuan Xin, Weifeng Sun, Zhuo Yang, Yuanzheng Zhu, Lihua Ni   +9 more
semanticscholar   +1 more source

Decoupled Double-Channel p-GaN Gate AlGaN/GaN HEMT Featuring Low Reverse Conduction Loss and High Forward Threshold Voltage

IEEE Electron Device Letters
A Hybrid-Source p-GaN gate Normally-OFF AlGaN/GaN HEMT is proposed and successfully fabricated, based on a decoupled double-channel structure. It mitigates the compatibility issue between the p-GaN gate and double-channel structures by decoupling the ...
Xiaotian Tang, Zhongchen Ji, Q. Jiang, Sen Huang, Xinguo Gao, K. Wei, Xinhua Wang, Xinyu Liu   +7 more
semanticscholar   +1 more source

A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier

Microelectronics and reliability, 2023
Tanvika Garg, S. Kale
semanticscholar   +1 more source

Modeling the Impact of Mg Out-Diffusion on Threshold Voltage of p-GaN/AlGaN/GaN HEMT

IEEE Transactions on Electron Devices
This article presents a novel analytical model for the threshold voltage ( ${V}_{T}$ ) of p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs), taking into account the influence of magnesium (Mg)-dopant out-diffusion from the top p-GaN layer into ...
Nadim Ahmed, Gourab Dutta
semanticscholar   +1 more source

Gate Circuit improves p-GaN HEMT VTH reliability

2023
Liu, Xinke, Chen, Zengfa, Zhong, Ze
openaire   +1 more source