Results 121 to 130 of about 25,575,016 (220)

Considerations for Controlled Switching of the Power GaN HEMT

, 2019
This paper presents characteristics of the GaN HEMT and proposes controlled switching of the GaN Power HEMT. An experimental implementation is described, experimental current drive switching results presented and a closed loop control strategy is ...
Zhang, T, Palmer, P, Long, T, Schillaber, L, ,, Shelton, E   +5 more
core  

Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

, 2006
Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates.
Wang JX (Wang Junxi), Li HP (Li Jianping), Hu GX (Hu Guoxin), Wang CM (Wang Cuimei), Wang ZG (Wang Zhanguo), Wang XL (Wang Xiaoliang), Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn   +6 more
core  

Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse. [PDF]

Micromachines (Basel)
Sun L, Wu H, Tian J, Bai K.
europepmc   +1 more source

High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN_x Layer Etching Technique. [PDF]

Micromachines (Basel)
Cao X, Wang P, Mi M, Liu X, Xiao D, Du X, Lu M, Chen F, Huang Z, Yao J, Liang Y, Cui K, Ma X, Hao Y.   +13 more
europepmc   +1 more source

Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry. [PDF]

Sci Adv
Yu J, Li T, Lao Y, Yang J, Cui J, Liu S, Yang H, Yin Y, Wang M, Yang X, Chen KJ, Shen B, Wei J.   +12 more
europepmc   +1 more source

12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis

, 2014
An AlGaN/GaN metal-oxide semiconductor (MOS) high-electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al2O3 gate dielectric films grown using atomic layer deposition.
付 凯, Hou KY(侯克玉), Zhang BS(张宝顺), Liu, S, Yu GH(于国浩), Ceng CH(曾春红), Yuan, JS, Zhang ZL(张志利)   +7 more
core  

Atomically confined insertion for 2D strain and polarization engineered GaN electronics. [PDF]

Nat Commun
Shi Y, Dong Z, Wang J, Guo D, Li W, Sha W, Li Z, Yang Z, Zhang J, Liu J, Xu T, Hu W, Wang ZL, Zhai J.   +13 more
europepmc   +1 more source

Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al₂O₃ Interlayer. [PDF]

Nanomaterials (Basel)
Qiao G, Liu H, Feng C, Liao Y, Gong R, Guo H, Shao P, Chen D.   +7 more
europepmc   +1 more source

AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]

Microsyst Nanoeng
Yu Y, Liu Y, Ren W, Liu Y, Zhang Y, Wang Z, Zhuo Q, Liu Z, Wang T, Sun J.   +9 more
europepmc   +1 more source

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source