Results 91 to 100 of about 70,189 (251)

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Analysis and Design of a DC‐to‐24 GHz Compact High‐Speed Inductor‐less SPDT Switch

Electronics Letters, Volume 62, Issue 1, January/December 2026.
ABSTRACT A compact DC‐to‐24 GHz single‐pole, double‐throw switch with enhanced isolation, low insertion loss and high‐speed performance, by adopting a multiple series‐shunt structure, has been presented in this letter. The mechanism of multiple series‐shunt structures of the switch on isolation and insertion loss are analysed. To verify the feasibility,
Jiashu Guo, Ding He, Peng Wu, Zhongjun Yu   +3 more
wiley   +1 more source

Preconditioning of Ohmic p-GaN power HEMT for reproducible V measurements

Solid-State Electronics
The fluctuation of the threshold voltage (Vth) presents a challenge while monitoring electrical drift in reliability studies of GaN HEMTs. While technologies, such as ohmic p-GaN, may lessen V th fluctuations, the issue of recoverable charge trapping still remains.
Ghizzo, L., Trémouilles, David, Richardeau, Frédéric, Guibaud, G.   +3 more
openaire   +3 more sources

Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter

International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.
In this letter, a highly efficient and wideband power amplifier (PA) is proposed based on resistive–resistive series of continuous modes (Res‐Res SCMS) with a new microstrip low‐pass filter (LPF). By employing a conventional real‐to‐real impedance transformer, the output and input matching networks are realized by incorporating the transistor′s ...
Minshi Jia, Yaxing Liu, Zhigang Zhou, Tiansong Deng, Xiaomei Zhao, Xiao Wang, Haoming Yan, Vicente E. Boria   +7 more
wiley   +1 more source

Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3

Advanced Functional Materials, Volume 35, Issue 51, December 16, 2025.
Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko, Oliver Bierwagen, Wonwoo Suh, Jeewon B. Choi, Celesta S. Chang, Kookrin Char   +5 more
wiley   +1 more source

Design of GaN HEMT Buck Converter for BCM Operation

Energies
Power density and power efficiency are crucial for the design of high-performance computing servers. Buck converters exist due to their simplicity, but achieving a solution that combines high efficiency and high power density remains an ongoing research ...
Yueh-Tsung Hsieh, Chun-Hao Chen, Tsung-Lin Chen, Wei-Hua Chieng, Edward-Yi Chang   +4 more
doaj   +1 more source

Polarization fields in nitride nanostructures: ten points to think about

, 1999
Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces, have a ...
Ambacher, Ambacher, Bernardini, Bernardini, Bernardini, Bernardini, Bernardini, Burns, Bykhovski, Chichibu, Della Sala, Di Carlo, Fabio Bernardini, Fiorentini, Gil, Im, King-Smith, Kodozoy, Langer, Lefebvre, Oberhuber, Peng, Resta, Shimada, Takeuchi, Vanderbilt, Vincenzo Fiorentini, Yu   +27 more
core   +1 more source

AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor Deposition

Advanced Materials Interfaces, Volume 12, Issue 23, December 8, 2025.
Growth of AlScN/GaN multichannel heterostructures by metal–organic chemical vapor deposition is demonstrated for the first time. The growth of such structures is detailed through changes in growth parameters, such as the number of periods and the thickness of the channel layers, as well as structural studies.
Teresa Duarte, Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Niklas Wolff, Susanne Beuer, Lorenz Kienle, Rüdiger Quay, Stefano Leone   +9 more
wiley   +1 more source

A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

Power Electronic Devices and Components
The characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for
Patrick Diehle, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, Manuel Stabentheiner, Clemens Ostermaier   +6 more
doaj   +1 more source

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE Journal of the Electron Devices Society, 2019
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik   +5 more
doaj   +1 more source