Results 91 to 100 of about 25,575,016 (220)

Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

Journal of Physics Communications
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin   +7 more
doaj   +1 more source

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE Journal of the Electron Devices Society, 2019
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik   +5 more
doaj   +1 more source

High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile

IEEE Journal of the Electron Devices Society
$0.5~\mu $ m enhancement-mode (E-mode) p-GaN $\Gamma $ -gate RF HEMT with engineered Mg doping profile in p-GaN layer was studied for high power amplifier application.
Hsien-Chin Chiu, Chong-Rong Huang, Chia-Han Lin, Chia-Hao Yu, Hsuan-Ling Kao, Shinn-Yn Lin, Barry Lin   +6 more
doaj   +1 more source

Анализ параметров GaN-HEMT до и после гамма-нейтронного воздействия

, 2017
Предложен метод математической обработки результатов измерений вольт-фарадных характеристик HEMT AlGaN/GaN до и после gamma-нейтронного облучения с флюенсом 0.4·1014 cм-2.
C.B. Оболенский, A.B. Хананова, А.Б. Макаров, O.E. Галкин, E.A. Тарасова   +4 more
core   +1 more source

Fenomeni di intrappolamento di carica su dispositivi gan-hemt con substrato in silicio per applicazioni di potenza

, 2022
Studio dei fenomeni di intrappolamento di carica e di degrado in dispositivi GaN-HEMT, con analisi dei fenomeni in dispositivi package attraverso misure dinamiche e DCreservedEmbargo permanente per motivi di segretezza e/o di proprietà dei risultati e ...
Girotto, Marco
core  

Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage

Journal of Science: Advanced Materials and Devices
A novel AlGaN/GaN HEMT is proposed to improve its single event transient (SET) effect and breakdown characteristics. The device features an AlGaN back barrier layer and a buried P-GaN island in the back barrier layer (BP-HEMT).
Shuxiang Sun, Xintong Xie, Pengfei Zhang, Zhijia Zhao, Jie Wei, Xiaorong Luo   +5 more
doaj   +1 more source

Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs

IEEE Journal of the Electron Devices Society
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) feature low ON resistance and low gate-input capacitance, so that they can serves as power switches with switching frequency from several MHz to tens of MHz level.
Ziheng Liu, Jiayin He, Hongjie Peng, Ju Gao, Wenbo Xia, Chengkang Ao, Jinyan Wang, Maojun Wang, Jin Wei, Yong Xie   +9 more
doaj   +1 more source

Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate. [PDF]

Micromachines (Basel), 2022
Wang HC, Liu CH, Huang CR, Chiu HC, Kao HL, Liu X.   +5 more
europepmc   +1 more source

Studio del breakdown di dispositivi GaN HEMT di potenza

, 2022
I meccanismi di off-state breakdown e di rottura in forward bias dei dispositivi GaN HEMT sono tutt'ora oggetto di studi. Obiettivo di questa tesi è perciò quello di indagare i fenomeni di rottura dei transistor di tre diversi wafer.
Cibin, Giulia
core  

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

IEEE Journal of the Electron Devices Society
In this work, we investigated the stability of a ${p}$ -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit.
Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu   +14 more
doaj   +1 more source