Results 21 to 30 of about 29,855,390 (205)

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime [PDF]

IEEE Electron Device Letters
In this letter, we report an approach to improve the forward bias gate reliability of Schottky gate p-GaN HEMTs. In particular, a gate layout solution, namely Gate Within Active Area (GWA), aimed at improving the high-temperature time to failure (TTF), is proposed and validated. This solution allows to avoid the exposure of the gate finger (p-GaN/metal)
A. N. Tallarico, M. Millesimo, M. Borga, B. Bakeroot, N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi, C. Fiegna   +8 more
openaire   +3 more sources

Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal [PDF]

Micromachines
A comparative study was undertaken to examine the VTH stability of p-GaN gate high electron mobility transistors (HEMTs) without the p-NiO reduced surface field (RESURF) terminal and with the RESURF terminal under off-state drain voltage stress and ...
Jun Pan, Xiangru Ye, Ruixi Jiang, Ailin Miao, Fuxiang Miao, Zhiyi Mao, Yanghu Peng, Hui Guo, Jianming Lei   +8 more
doaj   +2 more sources

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements [PDF]

IEEE Transactions on Electron Devices, 2021
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related ...
Zhou, Guangnan, Zeng, Fanming, Jiang, Yang, Wang, Qing, Jiang, Lingli, Guangrui, Xia, Yu, Hongyu   +7 more
openaire   +3 more sources

Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit

2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022
On GaN power IC platform, the lateral p-GaN gate high-electron-mobility transistors (HEMTs) can be reconfigured as diodes in a bootstrap circuit by shorting the gate and source as the anode terminal.
Yan Cheng, Han Xu, Li Zhang, Tao Chen, Junting Chen, Zheyang Zheng, Kevin J. Chen   +6 more
openaire   +2 more sources

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines, 2021
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity.
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen   +6 more
doaj   +2 more sources

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile [PDF]

IEEE Transactions on Electron Devices
The forward bias gate leakage current and forward gate breakdown voltage are important properties of p-GaN gate high-electron-mobility transistors (HEMTs). An engineered doping profile in the p-GaN layer results in a higher gate breakdown voltage and a lower forward bias gate leakage current.
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +3 more sources

Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020
Gate reliability and reverse-bias-stress-induced $V$ TH instability issues were investigated in the E-mode p-GaN gate HEMTs. A GaN-based p-n junction gate (PNJ) HEMT featuring an $n$ -GaN/ $p$ -GaN/AlGaN/GaN gate stack was proposed to effectively reduce the gate leakage and enlarge safe gate operation bias region of the p-GaN gate devices. The $V$
Mengyuan Hua, Chengcai Wang, Junting Chen, Li Zhang, Zheyang Zheng, Kevin J. Chen   +5 more
openaire   +2 more sources

Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT [PDF]

Micromachines
The increasing market demand for high-power and high-frequency applications necessitates the development of highly reliable Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs).
Yu-Ting Chuang, Niall Tumilty
doaj   +2 more sources

Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique

Applied Physics Express
Improved p -GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching.
Chengcai Wang, Junting Chen, Zuoheng Jiang, Haohao Chen   +3 more
doaj   +2 more sources

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Energies, 2023
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior.
Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley   +5 more
doaj   +1 more source