Results 21 to 30 of about 4,002 (212)

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors

Micromachines, 2023
In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs) with Schottky-type p-GaN gate. The gate stack degradations of p-GaN gate
Myeongsu Chae, Hyungtak Kim
doaj   +1 more source

Reliability of p-GaN Gate HEMTs in Reverse Conduction

IEEE Transactions on Electron Devices, 2021
Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction). However, the reliability of the p-GaN gate high electron mobility transistor (HEMT) in reverse conduction is unclear. In this work,
Cingu, Deepthi, Li, Xiangdong, Bakeroot, Benoit, Amirifar, Nooshin, Geens, Karen, Jacobs, Kristof J.P., Zhao, Ming, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan   +9 more
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Simulation of Electrical Characteristics on Inhomogeneous Strains in Normally-off HEMTs with p-GaN Gate [PDF]

MATEC Web of Conferences, 2020
Strain is one of the important factors affecting the two-dimensional electron gas (2DEG) transform in AlGaN/GaN material based high electron mobility transistors (HEMTs) by polarization effects.
Zhou Jing, Chen Hongjun, Wang Yang, Long Xingming   +3 more
doaj   +1 more source

Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering

, 2021
We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6
Zhou, Guangnan, Zeng, Fanming, Gao, Rongyu, Wang, Qing, Cheng, Kai, Xia, Guangrui, Yu, Hongyu   +6 more
openaire   +2 more sources

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

IEEE Journal of the Electron Devices Society, 2021
The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and ...
X. B. Xu, B. Li, Y. Q. Chen, Z. H. Wu, Z. Y. He, L. Liu, S. Z. He, Y. F. En, Y. Huang   +8 more
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Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications

IEEE Journal of the Electron Devices Society, 2020
Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two ...
Wei-Chih Cheng, Fanming Zeng, Minghao He, Qing Wang, Mansun Chan, Hongyu Yu   +5 more
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Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs [PDF]

IEEE Transactions on Electron Devices, 2020
The gate leakage current of p-GaN gate HEMTs is modeled based on surface potential calculations. The model accurately describes the bias and temperature dependence of the gate leakage. Thermionic emission is the main mechanism of the gate current in forward bias operation while hopping transport component is the main mechanism of gate current in ...
Jie Wang, Zhanfei Chen, Shuzhen You, Wenyong Zhou, Benoit Bakeroot, Jun Liu, Lingling Sun, Stefaan Decoutere   +7 more
openaire   +2 more sources

Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]

, 2016
status ...
Decoutere, S., Marcon, D., Meneghesso, Gaudenzio, Meneghini, Matteo, Posthuma, N., Rizzato, V., Rossetto, Isabella, Stoffels, S., Van Hove, M., Wu, T. L., Zanoni, Enrico   +10 more
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Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss

Energy Reports, 2023
In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz.
Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi Chen   +3 more
doaj   +1 more source

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs [PDF]

, 2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high
Martín Holgado, Pedro, Martínez, Pedro J., Maset, Enrique, Morilla García, Yolanda   +3 more
core   +1 more source