Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate [PDF]
Micromachines, 2023 The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han +10 more
doaj +3 more sources
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs [PDF]
Micromachines, 2021 We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping ...
Jie Wang +5 more
doaj +6 more sources
Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization [PDF]
Micromachines, 2023 The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li +10 more
doaj +2 more sources
Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs [PDF]
Applied Physics Letters, 2022 In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in the linear regime. These devices exhibit unique threshold voltage and
Ethan S. Lee +3 more
openaire +3 more sources
A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication [PDF]
Nanomaterials, 2023 A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the p-GaN etching induced damage region for high performance p-GaN gate HEMTs fabrication.
Luyu Wang +16 more
doaj +2 more sources
Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization [PDF]
Micromachines, 2022 In this work, temperature-dependent transient threshold voltage (VT) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltage ...
Rui Wang +10 more
doaj +2 more sources
Energies, 2021 In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese +5 more
doaj +2 more sources
Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion [PDF]
MicromachinesThe explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices.
Lili Zhai +13 more
doaj +2 more sources
Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors
Micromachines, 2023 As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance.
Zhongxu Wang +5 more
doaj +2 more sources
On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs [PDF]
MicromachinesIn this paper, preliminary gate reliability of p-GaN HEMTs under high positive gate bias is studied. Gate robustness is of great interest both from an academic and industrial point of view; in fact, different tests and models can be explored to estimate ...
Giovanni Giorgino +13 more
doaj +4 more sources