Results 1 to 10 of about 961 (128)
Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs [PDF]
Sensors, 2021 This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30 THz.
Jaime Calvo-Gallego +6 more
doaj +2 more sources
Sub-THz Imaging Using Non-Resonant HEMT Detectors [PDF]
Sensors, 2018 Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate strained-Si
Juan A. Delgado-Notario +3 more
doaj +2 more sources
A 100-Element MODFET Grid Amplifier [PDF]
IEEE Antennas and Propagation Society International Symposium. 1995 Digest, 1995 A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFETs). Common-mode oscillations were suppressed using resistors in the input gate leads.
DeLisio, Michael P. +4 more
core +3 more sources
Ultrawideband LNA 1960–2019: Review
IET Circuits, Devices &Systems, Volume 15, Issue 8, Page 697-727, November 2021., 2021 Abstract To the best of the author's knowledge, several studies during 1960–2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio‐Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite ...
Shahab Shahrabadi
wiley +1 more source
Applied Sciences, 2020 Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub-THz
Juan A. Delgado-Notario +5 more
doaj +1 more source
Research on GaN MODFET's [PDF]
MRS Internet Journal of Nitride Semiconductor Research, 1996 Initial results on 0.25 μm gate MODFET's have yielded ft=21.4 GHz and fmax=77.5 GHz. These devices have characteristics that agree with the gradual channel model dominated by the electron mobility. The AlGaN/GaN structure, grown on sapphire substrates, are polycrystalline, and thus yield low mobility (<100cm2/Vs) at low electron sheet density. Using
L. Eastman +6 more
openaire +1 more source
Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications [PDF]
, 2003 Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped FETs (MODFETs) fabricated by Daimler Chrysler, numerical simulations have been used to study the impact of the device geometry and various doping ...
Asenov, A. +8 more
core +1 more source
Accurate on-wafer power and harmonic measurements of mm-wave amplifiers and devices [PDF]
, 1992 A novel integrated test system that accurately measures on-wafer S-parameters, power levels, load-pull contours and harmonics over 1 to 50 GHz is presented.
Cognata, A. +2 more
core +1 more source
Monte Carlo investigation of optimal device architectures for SiGe FETs [PDF]
, 1998 Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applications, in a material system compatible with silicon VLSI. However, the optimisation of practical RF devices requires some care.
Asenov, A. +4 more
core +1 more source
A SiGe HEMT Mixer IC with Low Conversion Loss [PDF]
, 2003 The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1µ µµ µm gate length transistor technology.
Abele, P. +7 more
core +1 more source