Results 1 to 10 of about 92 (88)
Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs [PDF]
Sensors, 2021 This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30 THz.
Jaime Calvo-Gallego +6 more
doaj +2 more sources
Sub-THz Imaging Using Non-Resonant HEMT Detectors [PDF]
Sensors, 2018 Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate strained-Si
Juan A. Delgado-Notario +3 more
doaj +2 more sources
Applied Sciences, 2020 Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub-THz
Juan A. Delgado-Notario +5 more
doaj +1 more source
Research on GaN MODFET's [PDF]
MRS Internet Journal of Nitride Semiconductor Research, 1996 Initial results on 0.25 μm gate MODFET's have yielded ft=21.4 GHz and fmax=77.5 GHz. These devices have characteristics that agree with the gradual channel model dominated by the electron mobility. The AlGaN/GaN structure, grown on sapphire substrates, are polycrystalline, and thus yield low mobility (<100cm2/Vs) at low electron sheet density. Using
L. Eastman +6 more
openaire +1 more source
Revista Brasileira de Ensino de FísicaO ensino de física dos dispositivos semicondutores é absolutamente fundamental para o desenvolvimento da microeletrônica. Contudo, cursos introdutórios nesta área muitas vezes se limitam a apresentar modelos analíticos excessivamente simplificados, que ...
Murilo A. Romero +2 more
doaj +1 more source
Solid-State Electronics, 1997 Abstract MODFETs, with and without gate recess, were fabricated on a GaN Al 0.27 Ga 0.73 N heterostructure. The gate recess etch was performed with an ECR etch. The gate recess etch improved the maximum transconductance from 23 to 45 mS/mm, ft from 11.4 to 14 GHz, and fmax from 21.2 to 42.5 GHz.
Jinwook Burm +5 more
openaire +1 more source
Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]
Materials (Basel), 2023 Maimon O, Li Q.
europepmc +1 more source
The Studies on Gallium Nitride-Based Materials: A Bibliometric Analysis. [PDF]
Materials (Basel), 2023 Lam WH, Lam WS, Lee PF.
europepmc +1 more source
Gallium Oxide for Gas Sensor Applications: A Comprehensive Review. [PDF]
Materials (Basel), 2022 Zhu J +6 more
europepmc +1 more source