SiGe HMODFET "KAIST" micropower model and amplifier realization
, 2004 Published ...
Despotopoulos, S +6 more
core +1 more source
50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node [PDF]
, 2006 Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date.
Elgaid, K. +5 more
core +1 more source
A planar Gunn diode operating above 100 GHz [PDF]
, 2007 We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlGaAs. There is a considerable interest in such devices since they lend themselves to integration into millimeter-wave and terahertz integrated circuits ...
Cumming, D.R.S. +6 more
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Improved analytic MODFET charge-control model
Solid-State Electronics, 1993 Abstract A three-piece charge-control model has been derived for MODFETs which covers the three principal regions of operation—weak, moderate and strong inversion. The analytic model compares well with numerical computation of eqns (1a) and (1b).
G. George, J.R. Hauser
openaire +1 more source
Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs [PDF]
, 1996 The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography.
Asenov, A. +6 more
core +1 more source
Self-consistent physical modeling of SiOx-based RRAM structures [PDF]
, 2015 We apply a unique three-dimensional (3D) physics-based atomistic simulator to study silicon-rich (SiOx, x<;2) resistive switching nonvolatile memory (RRAM) devices.
Asenov, Asen +4 more
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Quantitative mobility spectrum analysis of AlGaN∕GaN heterostructures using variable-field hall measurements [PDF]
, 2006 Carrier transport properties of AlGaN∕GaNheterostructures have been analyzed with the quantitative mobility spectrum analysis (QMSA) technique. The nominally undoped Al0.08Ga0.92N∕GaN sample was grown by plasma-assisted molecular beam epitaxy on a GaN ...
Bandyopadhyay, S. +7 more
core +2 more sources
High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications [PDF]
Contains an introduction, reports on two research projects and a list of publications.Charles S. Draper Laboratories Contract DL-H-441694Fujitsu LaboratoriesJoint Services Electronics Program Contract DAAL03-92-C-0001Texas ...
Awanol, Yuji +6 more
core +3 more sources
Low-cost high-performance W-band LNA MMICs for millimeter-wave imaging [PDF]
, 2000 The main limitation to the sensitivity of a radiometer or imager is its equivalent noise temperatures, T_e. Placing a low noise amplifier (LNA) at a radiometer's front end can dramatically reduce T_e.
Case, Michael G. +7 more
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Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor [PDF]
, 2006 We demonstrated ferroelectricfield effect transistors (FFETs) with hysteretic I-V characteristics in a modulation-doped field effect transistors(MODFET)AlGaN∕GaN platform with ferroelectricPb(Zr,Ti)O3 between a GaN channel and a gate metal. The pinch-off
Alivov, Ya. I. +11 more
core +2 more sources