Results 41 to 50 of about 92 (88)

High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's

IEEE Transactions on Electron Devices, 2000
High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide-semiconductor MODFET (MOS-MODFET) with 0.1 /spl mu/m gate-length have been fabricated on a high hole mobility SiGe-Si heterojunction grown by ultrahigh vacuum chemical vapor deposition.
W. Lu, A. Kuliev, S.J. Koester, X.-W. Wang, J.O. Chu, T.-P. Ma, I. Adesida   +6 more
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An improved MODFET microwave analysis

IEEE Transactions on Electron Devices, 1988
A recently proposed MODFET analysis is improved by presenting more accurate expressions for the MODFET admittance parameters. It is shown that the resulting parameters can improve the frequency range of validity by a factor of two over those recently presented, and that the latter represent a low-frequency approximation to the parameters given here. An
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MODFET versus MESFET: the capacitance argument

IEEE Transactions on Electron Devices, 1994
In this paper a detailed charge control analysis is presented for a MESFET and a MODFET to show how the various capacitances associated with the region under the gate contact influence device performance. Where necessary, an exact description of electron confinement is included in the solution scheme by solving the effective mass Schrodinger equation ...
C.G. Morton, J. Wood
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Nonstationary Transport in MODFETs and Heterojunction Devices

Topical Meeting on Picosecond Electronics and Optoelectronics, 1987
New horizons have opened up in semiconductor research with the possibility of "band gap engineering" and the combination of signal transport by photons as well as electrons in new forms of ultra thin III-V compound layers.
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Terahertz photomixing in strained silicon MODFET

35th International Conference on Infrared, Millimeter, and Terahertz Waves, 2010
Strained-Si modulation doped • eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where Δf=|f1-f2|=4 THz. A clear signal was observed with maximum located at around Vg=−0.15V and interpreted as due to the oscillation of the plasma waves under the gate bias.
Y. M. Meziani, A. El Moutaouakil, E. Velazquez, E. Diez, K. Fobelets, T. Otsuji   +5 more
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High-Performance SiGe MODFET Technology

MRS Proceedings, 2004
ABSTRACTAn overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers.
S. J. Koester, J. O. Chu, K. L. Saenger, Q. C. Ouyang, J.A. Ott, D. F. Canaperi, J. A. Tornello, C.V. Jahnes, S. E. Steen   +8 more
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A quasi‐variational inequality for the simulation of a MODFET transistor

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 1999
We introduce the drift‐diffusion model with appropriate jump conditions at the junction of the MODFET transistor (AlGaAs/GaAs). We propose a quasi‐variational inequality (QVI) model for this device. We assume that the electron density is bounded and piecewise constant.
Lefèvre, François, Nassif, Nabil
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Picosecond MODFET IC pulse sharpener

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers, 2002
A monolithic synthetic transmission line pulse sharpener using a high power 0.25- mu m InGaAs-GaAs MODFET IC process is discussed. It current-sharpens a DC-to-5-GHz input to a pulse of at least 5-ps, 2-V output transition. This first implementation of a pulse-sharpening circuit in a MODFET IC process demonstrates the broadband capabilities of this ...
M.S. Shakouri, A. Black, D.M. Bloom, J. Perdomo, H. Kondoh, H. Vifian   +5 more
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MODFETs soar to 400 GHz

IEEE Circuits and Devices Magazine, 1991
The operation of MODFETs (modulation-doped FETs) is explained. These devices now have switching delays under 5 ps, current-gain cutoff frequencies of about 250 GHz, and maximum oscillation frequencies in excess of 400 GHz. They also perform frequency division up to 26 GHz.
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High transconductance Al0.3Ga0.7As/GaAs MODFETs

Microelectronic Engineering, 1990
Abstract Bulk and planar doped 0.2μm gate length Al0.3Ga0.7As/GaAs MODFETs have been fabricated by using a three step e-beam lithography process. The DC electric measurements of the planar doped MODFETs demonstrate peak extrinsic transconductances as high as 625mS/mm.
Y. Jin, B. Etienne, F. Pardo, G. Faini, H. Launois   +4 more
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