Results 41 to 50 of about 93 (89)

Comparative study on performance of cubic AlxGa1−xN/GaN nanostructures MODFETs and MOS-MODFETs

Superlattices and Microstructures, 2013
Abstract We report some comparative results on cubic AlxGa1−xN/GaN nanostructures MODFET and MOS-MODFET. The drain current characteristics of cubic AlxGa1−xN/GaN MODFET and MOS-MODFET are simulated by changing the different device parameters such as Al content x and the cubic GaN buffer layer thickness using 2D nextnano3 numerical simulation software.
Driss Bouguenna, A. Boudghene Stambouli, N. Mekkakia Maaza, A. Zado, D.J. As   +4 more
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Analysis of MODFET microwave characteristics

IEEE Transactions on Electron Devices, 1987
A new ac MODFET model including distributed effects is presented. We have solved the wave equation of the MODFET, which automatically accounts for the propagation delay, capacitances, and charging resistances. Using a frequency power series proposed by Ziel, we derive an approximate analytic expression for the four intrinsic Y parameters.
P. Roblin, null Sungchoon Kang, A. Ketterson, H. Morkoc   +3 more
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Effect of noise on the performance of MODFET

Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010), 2010
In this paper, an analysis on the effect of noise on the performance of the MODFET was carried out. Here the MODFET model considered is of 0.25 × 200 um2 technology. The equivalent noise model is used and the transconductance with respect to frequency is analyzed and also the variation of the drain current with frequency is also analyzed under the ...
V. J. K. Kishor Sonti, V. Kannan
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Backgating characteristics of MODFET structures

IEEE Electron Device Letters, 1985
Significant backgating in mesa-isolated AlGaAs/GaAs MODFET structures is reported. Results are presented on the influence of backgate potential on the electrical characteristics of enhancement-mode MODFET's fabricated on MBE grown material. An observed zero threshold voltage for the onset of backgating is attributed to a high level of current leakage ...
A. Ezis, D.W. Langer
openaire   +1 more source

High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's

IEEE Transactions on Electron Devices, 2000
High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide-semiconductor MODFET (MOS-MODFET) with 0.1 /spl mu/m gate-length have been fabricated on a high hole mobility SiGe-Si heterojunction grown by ultrahigh vacuum chemical vapor deposition.
W. Lu, A. Kuliev, S.J. Koester, X.-W. Wang, J.O. Chu, T.-P. Ma, I. Adesida   +6 more
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An improved MODFET microwave analysis

IEEE Transactions on Electron Devices, 1988
A recently proposed MODFET analysis is improved by presenting more accurate expressions for the MODFET admittance parameters. It is shown that the resulting parameters can improve the frequency range of validity by a factor of two over those recently presented, and that the latter represent a low-frequency approximation to the parameters given here. An
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A quasi‐variational inequality for the simulation of a MODFET transistor

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 1999
We introduce the drift‐diffusion model with appropriate jump conditions at the junction of the MODFET transistor (AlGaAs/GaAs). We propose a quasi‐variational inequality (QVI) model for this device. We assume that the electron density is bounded and piecewise constant.
Lefèvre, François, Nassif, Nabil
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Nonstationary Transport in MODFETs and Heterojunction Devices

Topical Meeting on Picosecond Electronics and Optoelectronics, 1987
New horizons have opened up in semiconductor research with the possibility of "band gap engineering" and the combination of signal transport by photons as well as electrons in new forms of ultra thin III-V compound layers.
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MODFET versus MESFET: the capacitance argument

IEEE Transactions on Electron Devices, 1994
In this paper a detailed charge control analysis is presented for a MESFET and a MODFET to show how the various capacitances associated with the region under the gate contact influence device performance. Where necessary, an exact description of electron confinement is included in the solution scheme by solving the effective mass Schrodinger equation ...
C.G. Morton, J. Wood
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Terahertz photomixing in strained silicon MODFET

35th International Conference on Infrared, Millimeter, and Terahertz Waves, 2010
Strained-Si modulation doped • eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where Δf=|f1-f2|=4 THz. A clear signal was observed with maximum located at around Vg=−0.15V and interpreted as due to the oscillation of the plasma waves under the gate bias.
Y. M. Meziani, A. El Moutaouakil, E. Velazquez, E. Diez, K. Fobelets, T. Otsuji   +5 more
openaire   +1 more source