Results 51 to 60 of about 93 (89)

High-Performance SiGe MODFET Technology

MRS Proceedings, 2004
ABSTRACTAn overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers.
S. J. Koester, J. O. Chu, K. L. Saenger, Q. C. Ouyang, J.A. Ott, D. F. Canaperi, J. A. Tornello, C.V. Jahnes, S. E. Steen   +8 more
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Picosecond MODFET IC pulse sharpener

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers, 2002
A monolithic synthetic transmission line pulse sharpener using a high power 0.25- mu m InGaAs-GaAs MODFET IC process is discussed. It current-sharpens a DC-to-5-GHz input to a pulse of at least 5-ps, 2-V output transition. This first implementation of a pulse-sharpening circuit in a MODFET IC process demonstrates the broadband capabilities of this ...
M.S. Shakouri, A. Black, D.M. Bloom, J. Perdomo, H. Kondoh, H. Vifian   +5 more
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P-channel MODFET as an optoelectronic detector

SPIE Proceedings, 2002
Optical response of both the gate current and the drain current in p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET is reported and analytic models are presented. Based on quantum nature of the two-dimensional carrier statistics in the channel and a new model for the gate current, the overall current variation under optical ...
Hwe-Jong Kim, Dong Myong Kim, Il Ki Han, Won Jun Choi, Jacques Zimmermann, Jung Il Lee   +5 more
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Anomalies in MODFET's with a low-temperature buffer

IEEE Transactions on Electron Devices, 1990
GaAs buffer layers grown by molecular-beam epitaxy (MBE) at low temperatures (200-300 degrees C) have been successfully used to reduce sidegating in both MESFETs and MODFETs. There are, however, high concentrations of defects in the low-temperature (LT) buffers that adversely affect the high-frequency performance of precision analog and certain digital
B.J.-F. Lin, C.P. Kocot, D.E. Mars, R. Jaeger   +3 more
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Noise properties of AlGaAs/GaAs MODFET's

IEEE Transactions on Electron Devices, 1993
An analytically tractable model is presented for the calculation of noise performance of a modulation-doped field-effect transistor (MODFET). The charge control is based on the self-consistent solution of Schrodinger and Poisson's equation. An improved velocity-field characteristic is used in the calculation. The fit provided by the developed theory to
A.F.M. Anwar, K.-W. Liu
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Low frequency noise sources in InAlAs/InGaAs MODFET's

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM), 1996
In this work, we present a study of various low-frequency noise (LFN) sources in InAlAs/InGaAs MODFET structures. The contributions of the main noise sources-drain and source contact resistance fluctuations, channel charge fluctuations and gate current noise-are separated by measuring the drain current power noise spectrum on uncompleted, gate free ...
Viktorovitch, P., Rojo-Romeo, P., Leclercq, J.L., Letartre, X., Tardy, J., Oustric, M., Gendry, Michel   +6 more
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Charge collection in GaAs MESFETs and MODFETs

IEEE Transactions on Nuclear Science, 1991
A comparison of the amount of charge collected at the drains of GaAs MESFETs irradiated with pulsed laser light and ions and having different gate lengths shows orders of magnitude more charge collected for 0.1 mu m MESFETs than for 1.2 mu m MESFETs manufactured using different processes.
S. Buchner, K. Kang, D.W. Tu, A.R. Knudson, A.B. Campbell, D. McMorrow, V. Srinivas, Y.J. Chen   +7 more
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High-Performance Quarter-Micron-Gate MODFETs

Topical Meeting on Picosecond Electronics and Optoelectronics, 1987
Modulation-doped FETs provide a significant performance advantage over conventional GaAs FETs due to the superior transport properties of the two-dimensional electrons which form the conductive channel in these devices. Table 1 compares the material and device characteristics of different FET devices. At TRW quarter-micron-gate AlGaAs/GaAs MODFETs have
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Performance Analysis of GaN/AlGaN/AlN/GaN MIS-MODFETs with High-κ as Gate Dielectric Insulator Layer

Transactions on Electrical and Electronic Materials, 2023
Driss Bouguenna
exaly  

Modeling of MODFETs

Microelectronics Journal, 1989
openaire   +1 more source