Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]
Materials (Basel), 2023 Maimon O, Li Q.
europepmc +1 more source
Flicker Noise in Bilayer Graphene Transistors
, 2008 We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation.
Balandin, A. A. +6 more
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The Studies on Gallium Nitride-Based Materials: A Bibliometric Analysis. [PDF]
Materials (Basel), 2023 Lam WH, Lam WS, Lee PF.
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Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on SiââxGex/Si virtual substrates [PDF]
, 2002 We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ.âGeâ.â virtual substrates. The poor interface between silicon dioxide (SiOâ) and the Ge channel was eliminated by capping the strained Ge ...
Antoniadis, Dimitri A. +4 more
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Rashba spin-orbit coupling and spin relaxation in silicon quantum wells
, 2004 Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key parameter for
A. A. Burkov +12 more
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High transconductance-normally-off GaN MODFETs
Electronics Letters, 1995 Normally-off GaN based modulation doped field-effect transistors have been fabricated. The extrinsic transconductance of MODFETs with gate and channel lengths of 3 and 5 /spl mu/m, respectively, is as high as 120 mS/mm. The devices exhibit 300 mA/mm current at a positive gate bias of 3 V. This transconductance value compares very favourably with the 45
A. Özgür +7 more
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Gallium Oxide for Gas Sensor Applications: A Comprehensive Review. [PDF]
Materials (Basel), 2022 Zhu J +6 more
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Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation
, 2003 The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped structures.
Dollfus, P. +4 more
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On the genuine bound states of a non-relativistic particle in a linear finite range potential
, 2008 We explore the energy spectrum of a non-relativistic particle bound in a linear finite range, attractive potential, envisaged as a quark-confining potential.
Kagali, B. A., Rao, Nagalakshmi A
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Physics of Hemterostructure Field-Effect Transistors [PDF]
Contains an introduction, report on one research project and a list of publications.Joint Services Electronics Program Contract DAAH04-95-1-0038Texas Instruments Agreement dated 11/23 ...
del Alamo, Jesús A. +3 more
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