Results 61 to 70 of about 961 (128)

A 30 GHz monolithic receive module technology assessment [PDF]

This report is a technology assessment relevant to the 30 GHz Monolithic Receive Module development. It is based on results obtained on the present NASA Contract (NAS3-23356) as well as on information gathered from literature and other industry sources ...
Bauhahn, P., Contolatis, T., Geddes, J., Sokolov, V.   +3 more
core   +1 more source

Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier [PDF]

, 2013
In this paper, implementation and testing of non- commercial GaN HEMT in a simple buck converter for envelope amplifier in ET and EER transmission techn iques has been done.
Alou Cervera, Pedro, Benkhelifa, F., Calle Gómez, Fernando, Cobos Márquez, José Antonio, Cucak, Dejana, García Suárez, Oscar, Müller, S., Oliver Ramírez, Jesús Angel, Reiner, R., Tadjer, Marko Jak, Vasic, Miroslav, Waltereit, P.   +11 more
core  

Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs

, 2004
Published ...
Despotopoulos, S, Fobelets, K, Michelakis, K, Papavassiliou, C, Toumazou, C, Vilches, A   +5 more
core   +1 more source

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques [PDF]

, 2004
System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power ...
Alterovitz, Samuel, Croke, Edward, Mueller, Carl, Ponchak, George   +3 more
core   +1 more source

Custom Integrated Circuits [PDF]

, 1985
Contains reports on seven research projects.U.S. Air Force - Office of Scientific Research (Contract F49620-84-C-0004)National Science Foundation (Grant ECS81-18160)Defense Advanced Research Projects Agency (Contract NOO14-80-C-0622)National Science ...
Allen, Jonathan, Armstrong, Robert C., Bain, Isaac, Baltus, Donald G., Bamji, Cyrus S., Glasser, Lance A., Hauck, Charles, Jeong, Hong, Kuo, Chung-Chieh, Levy, Bernard, Matson, Mark D., McCormick, Steven P., Musicus, Bruce R., Nabors, Keith S., O'Brien, Peter, Penfield, Paul L., Jr., Seiler, Larry, Song, William, Standley, David L., Tan, Han-Ngee, Wright, Rosalind H., Wroclawski, John, Wyatt, John L., Jr., Yu, Quinjian, Zukowski, Charles   +24 more
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Si:SiGe MODFET current mirror

Electronics Letters, 1998
K. Fobelets, W. Jeamsaksiri, J. Hampson, C. Toumazou, T. Thornton   +4 more
openaire   +1 more source

Submicron Structures Technology and Research [PDF]

Contains table of contents for Part I, table of contents for Section 1 and reports on fourteen research projects.Joint Services Electronics Program (Contract DAAL03-86-K-0002)Joint Services Electronics Program (Contract DAAL03-89-C-0001)National Science ...
Ajuria, Sergio, Anderson, Erik H., Antoniadis, Dimitri A., Bagwell, Phillip F., Burkhardt, Martin, Canizares, Claude R., Carter, James M., Chu, William, Early, Kathleen R., Field, Stuart B., Floro, Jerrold A., Ismail, Khalid, Kastner, Marc A., Kawata, Hiroaki, Ku, Yao-Ching, Licini, Jerome C., Meirav, Udi, Meyer, Paul, Moel, Alberto, Orlando, Terry P., Palmer, Joyce E., Park, Samuel L., Plotnik, Irving, Quek, Hui Meng, Schattenburg, Mark L., Scott-Thomas, John H. F., Shahidi, Ghavam G., Smith, Henry I., The, Siang-Chun, Thompson, Carl V., III, Yen, Anthony T.   +30 more
core  

HCl-gas etching behavior of (001) β-Ga₂O₃ under oxygen supply. [PDF]

Sci Technol Adv Mater
Oshima Y, Oshima T.
europepmc   +1 more source

Proton irradiation Of Ga₂O₃ Schottky diodes and NiO/Ga₂O₃ heterojunctions. [PDF]

Sci Rep
Polyakov AY, Saranin DS, Shchemerov IV, Vasilev AA, Romanov AA, Kochkova AI, Gostischev P, Chernykh AV, Alexanyan LA, Matros NR, Lagov PB, Doroshkevich AS, Isayev RS, Pavlov YS, Kislyuk AM, Yakimov EB, Pearton SJ.   +16 more
europepmc   +1 more source

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Nonlinear parasitics in MODFETs and MODFET I-V characteristics

IEEE Transactions on Electron Devices, 1988
A large-signal analysis of the source and drain resistance of MODFETs is reported. Velocity saturation in the two-dimensional electron gas (2DEG) and hypothetical rectifying effects in the n/sup +/-AlGaAs-i-GaAs interface are accounted for. Rectifying effects are found to be either absent or negligible.
P. Roblin, L. Rice, S.B. Bibyk, H. Morkoc   +3 more
exaly   +2 more sources