Results 81 to 90 of about 961 (128)

High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's

IEEE Transactions on Electron Devices, 2000
High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide-semiconductor MODFET (MOS-MODFET) with 0.1 /spl mu/m gate-length have been fabricated on a high hole mobility SiGe-Si heterojunction grown by ultrahigh vacuum chemical vapor deposition.
W. Lu, A. Kuliev, S.J. Koester, X.-W. Wang, J.O. Chu, T.-P. Ma, I. Adesida   +6 more
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High-Performance SiGe MODFET Technology

MRS Proceedings, 2004
ABSTRACTAn overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers.
S. J. Koester, J. O. Chu, K. L. Saenger, Q. C. Ouyang, J.A. Ott, D. F. Canaperi, J. A. Tornello, C.V. Jahnes, S. E. Steen   +8 more
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High transconductance Al0.3Ga0.7As/GaAs MODFETs

Microelectronic Engineering, 1990
Abstract Bulk and planar doped 0.2μm gate length Al0.3Ga0.7As/GaAs MODFETs have been fabricated by using a three step e-beam lithography process. The DC electric measurements of the planar doped MODFETs demonstrate peak extrinsic transconductances as high as 625mS/mm.
Y. Jin, B. Etienne, F. Pardo, G. Faini, H. Launois   +4 more
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Picosecond MODFET IC pulse sharpener

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers, 2002
A monolithic synthetic transmission line pulse sharpener using a high power 0.25- mu m InGaAs-GaAs MODFET IC process is discussed. It current-sharpens a DC-to-5-GHz input to a pulse of at least 5-ps, 2-V output transition. This first implementation of a pulse-sharpening circuit in a MODFET IC process demonstrates the broadband capabilities of this ...
M.S. Shakouri, A. Black, D.M. Bloom, J. Perdomo, H. Kondoh, H. Vifian   +5 more
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Backgating characteristics of MODFET structures

IEEE Electron Device Letters, 1985
Significant backgating in mesa-isolated AlGaAs/GaAs MODFET structures is reported. Results are presented on the influence of backgate potential on the electrical characteristics of enhancement-mode MODFET's fabricated on MBE grown material. An observed zero threshold voltage for the onset of backgating is attributed to a high level of current leakage ...
A. Ezis, D.W. Langer
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Physics of breakdown in InAlAs/InGaAs MODFET's

IEEE Transactions on Electron Devices, 1993
A detailed study of the physics of off-state breakdown in state-of-the-art lattice-matched and pseudomorphic InAlAs/InGaAs MODFETs is presented. It is found that, similarly to heterojunction avalanche photodiodes, breakdown in these devices is a two-step process.
S.R. Bahl, J.A. del Alamo, J. Dickmann, S. Schildberg   +3 more
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Comparative study on performance of cubic AlxGa1−xN/GaN nanostructures MODFETs and MOS-MODFETs

Superlattices and Microstructures, 2013
Abstract We report some comparative results on cubic AlxGa1−xN/GaN nanostructures MODFET and MOS-MODFET. The drain current characteristics of cubic AlxGa1−xN/GaN MODFET and MOS-MODFET are simulated by changing the different device parameters such as Al content x and the cubic GaN buffer layer thickness using 2D nextnano3 numerical simulation software.
Driss Bouguenna, A. Boudghene Stambouli, N. Mekkakia Maaza, A. Zado, D.J. As   +4 more
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High-Performance Quarter-Micron-Gate MODFETs

Topical Meeting on Picosecond Electronics and Optoelectronics, 1987
Modulation-doped FETs provide a significant performance advantage over conventional GaAs FETs due to the superior transport properties of the two-dimensional electrons which form the conductive channel in these devices. Table 1 compares the material and device characteristics of different FET devices. At TRW quarter-micron-gate AlGaAs/GaAs MODFETs have
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Analysis of MODFET microwave characteristics

IEEE Transactions on Electron Devices, 1987
A new ac MODFET model including distributed effects is presented. We have solved the wave equation of the MODFET, which automatically accounts for the propagation delay, capacitances, and charging resistances. Using a frequency power series proposed by Ziel, we derive an approximate analytic expression for the four intrinsic Y parameters.
P. Roblin, null Sungchoon Kang, A. Ketterson, H. Morkoc   +3 more
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Terahertz photomixing in strained silicon MODFET

35th International Conference on Infrared, Millimeter, and Terahertz Waves, 2010
Strained-Si modulation doped • eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where Δf=|f1-f2|=4 THz. A clear signal was observed with maximum located at around Vg=−0.15V and interpreted as due to the oscillation of the plasma waves under the gate bias.
Y. M. Meziani, A. El Moutaouakil, E. Velazquez, E. Diez, K. Fobelets, T. Otsuji   +5 more
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