Results 101 to 110 of about 961 (128)

Terahertz detection using Si-SiGe MODFETs

2013 Spanish Conference on Electron Devices, 2013
We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by two types of THz sources at 0.292 THz and at 1.5 THz. Non-resonant response with maxima around the threshold voltage was observed.
Y. M. Meziani, J. E. Velazquez-Perez, D. Coquillat, N. Dyakonova, W. Knap, I. Grigelionis, E. Garcia-Garcia, K. Fobelets   +7 more
openaire   +1 more source

Electroluminescence of Ge/SiGe p-MODFETs

Materials Science in Semiconductor Processing, 2005
Abstract In order to investigate impact ionization we have performed electrical DC measurements and electroluminescence (EL) spectroscopy on strained Ge on Si0.4Ge0.6 p-MODFETs. These measurements are discussed in comparison with energy band structure calculation and high electric field transport simulation.
S. Richard, N. Zerounian, N. Cavassilas, G. Höck, T. Hackbarth, H.-J. Herzog, F. Aniel   +6 more
openaire   +1 more source

Nonstationary Transport in MODFETs and Heterojunction Devices

Topical Meeting on Picosecond Electronics and Optoelectronics, 1987
New horizons have opened up in semiconductor research with the possibility of "band gap engineering" and the combination of signal transport by photons as well as electrons in new forms of ultra thin III-V compound layers.
openaire   +1 more source

Nonlinear model for MODFET parasitic resistances

Solid-State Electronics, 1992
Abstract An analytical nonlinear model for the parasitic resistances of modulation doped field effect transistors (MODFETs) has been developed. In this model, the effect of electron velocity saturation, surface potential and gate voltage on the nonlinearity of the resistances is investigated.
Ibrahim M. Abdel-Motaleb, C.N. Li
openaire   +1 more source

GaAs/AlGaAs MODFET's grown on

IEEE Electron Device Letters, 1984
R. Fischer, J. Klem, T. Henderson, W.T. Masselink, W. Kopp, H. Morkoc   +5 more
openaire   +1 more source

Performance Analysis of GaN/AlGaN/AlN/GaN MIS-MODFETs with High-κ as Gate Dielectric Insulator Layer

Transactions on Electrical and Electronic Materials, 2023
Driss Bouguenna
exaly  

Modeling of MODFETs

Microelectronics Journal, 1989
openaire   +1 more source

MODFETs

2001
openaire   +1 more source

MODFETs: OPERATION, STATUS AND APPLICATIONS

1996
S. NOOR MOHAMMAD, HADIS MORKOÇ
openaire   +1 more source

Subthreshold current in MODFETs of tenth-micrometer gate

IEEE Electron Device Letters, 1990
T-M Lu
exaly