Results 1 to 10 of about 97 (89)
Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs [PDF]
Sensors, 2021 This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30 THz.
Jaime Calvo-Gallego +6 more
doaj +2 more sources
Sub-THz Imaging Using Non-Resonant HEMT Detectors [PDF]
Sensors, 2018 Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate strained-Si
Juan A. Delgado-Notario +3 more
doaj +2 more sources
Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET
Advances in Materials Science and Engineering, 2014 A new two-dimensional analytical model for the capacitance-voltage and noise characteristics of a AlGaN/GaN MODFET is developed. The two-dimensional electron gas density is calculated as a function of device dimensions. The model includes the spontaneous
Ramnish Kumar +2 more
doaj +2 more sources
Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure
Journal of Nanotechnology, 2013 We demonstrate a memory effect in self-assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation-doped field-effect transistor (MODFET) which allows to charge and discharge the QDs and read out the ...
Tobias Nowozin +6 more
doaj +2 more sources
Ultrawideband LNA 1960–2019: Review
IET Circuits, Devices &Systems, Volume 15, Issue 8, Page 697-727, November 2021., 2021 Abstract To the best of the author's knowledge, several studies during 1960–2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio‐Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite ...
Shahab Shahrabadi
wiley +1 more source
Applied Sciences, 2020 Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub-THz
Juan A. Delgado-Notario +5 more
doaj +1 more source
Research on GaN MODFET's [PDF]
MRS Internet Journal of Nitride Semiconductor Research, 1996 Initial results on 0.25 μm gate MODFET's have yielded ft=21.4 GHz and fmax=77.5 GHz. These devices have characteristics that agree with the gradual channel model dominated by the electron mobility. The AlGaN/GaN structure, grown on sapphire substrates, are polycrystalline, and thus yield low mobility (<100cm2/Vs) at low electron sheet density. Using
L. Eastman +6 more
openaire +1 more source
Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices
Advances in Materials Science and Engineering, Volume 2014, Issue 1, 2014., 2014 Indium antimonide nanoparticles were synthesized at room temperature. X‐ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticle has an average particle size in a range of 47 mm to 99 mm which is observed using the XRD result. The InSb is a material which is used to design the transistor. For designing purpose
T. D. Subash +4 more
wiley +1 more source
Materials for Future Quantum Dot‐Based Memories
Journal of Nanomaterials, Volume 2013, Issue 1, 2013., 2013 The present paper investigates the current status of the storage times in self‐organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement. Experimental data for the electronic properties, such as localization energies and capture cross‐sections, are listed.
T. Nowozin +5 more
wiley +1 more source
Microscopic Modeling of GaN‐based Heterostructures
VLSI Design, Volume 13, Issue 1-4, Page 387-391, 2001., 2001 Self‐consistent quantum modeling of GaN‐based nanostructure are presented. The tight‐binding approach is used to calculate optical properties while optimized effective mass approaches are used to obtain the output characteristics of GaN HEMT.
F. Sacconi +3 more
wiley +1 more source