Results 1 to 10 of about 451 (136)
Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET [PDF]
Advances in Materials Science and Engineering, 2014 A new two-dimensional analytical model for the capacitance-voltage and noise characteristics of a AlGaN/GaN MODFET is developed. The two-dimensional electron gas density is calculated as a function of device dimensions. The model includes the spontaneous
Ramnish Kumar +2 more
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Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs [PDF]
Sensors, 2021 This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30 THz.
Jaime Calvo-Gallego +6 more
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Sub-THz Imaging Using Non-Resonant HEMT Detectors [PDF]
Sensors, 2018 Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate strained-Si
Juan A. Delgado-Notario +3 more
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Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure
Journal of Nanotechnology, 2013 We demonstrate a memory effect in self-assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation-doped field-effect transistor (MODFET) which allows to charge and discharge the QDs and read out the ...
Tobias Nowozin +6 more
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Applied Sciences, 2020 Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub-THz
Juan A. Delgado-Notario +5 more
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Research on GaN MODFET's [PDF]
MRS Internet Journal of Nitride Semiconductor Research, 1996 Initial results on 0.25 μm gate MODFET's have yielded ft=21.4 GHz and fmax=77.5 GHz. These devices have characteristics that agree with the gradual channel model dominated by the electron mobility. The AlGaN/GaN structure, grown on sapphire substrates, are polycrystalline, and thus yield low mobility (<100cm2/Vs) at low electron sheet density. Using
L. Eastman +6 more
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A 100-element MODFET grid amplifier [PDF]
IEEE Antennas and Propagation Society International Symposium. 1995 Digest, 2002 A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFETs). Common-mode oscillations were suppressed using resistors in the input gate leads. The grid has 9 dB of gain at 10.1 GHz. The 3-dB bandwidth is 1.2 GHz.
DeLisio, Michael P. +4 more
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Фізика і хімія твердого тілаCalculations of the dependencies of carrier concentration and specific electrical conductivity at room temperature for the undoped and doped germanium nanofilms, grown on the Ge(x)Si(1-x) substrate with crystallographic orientation (001), on a film ...
Sergiy Luniov +2 more
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High Frequency AlGaN/GaN MODFET's [PDF]
MRS Internet Journal of Nitride Semiconductor Research, 1997 Short-gate MODFET's of AlGaN/GaN on Sapphire have been fabricated and characterized with gate lengths in the .12 - .25 μm range. Values of ft = 50 GHz and fmax = 100 GHz have been obtained. Analyzing the performance, the average electron transit velocity is shown to be 1.25 × 107 cm/s and in some cases well under that value.
L. Eastman +5 more
openaire +1 more source
Solid-State Electronics, 1997 Abstract MODFETs, with and without gate recess, were fabricated on a GaN Al 0.27 Ga 0.73 N heterostructure. The gate recess etch was performed with an ECR etch. The gate recess etch improved the maximum transconductance from 23 to 45 mS/mm, ft from 11.4 to 14 GHz, and fmax from 21.2 to 42.5 GHz.
Jinwook Burm +5 more
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