Results 31 to 40 of about 97 (89)
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High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
IEEE Transactions on Electron Devices, 2000High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide-semiconductor MODFET (MOS-MODFET) with 0.1 /spl mu/m gate-length have been fabricated on a high hole mobility SiGe-Si heterojunction grown by ultrahigh vacuum chemical vapor deposition.
W. Lu +6 more
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An improved MODFET microwave analysis
IEEE Transactions on Electron Devices, 1988A recently proposed MODFET analysis is improved by presenting more accurate expressions for the MODFET admittance parameters. It is shown that the resulting parameters can improve the frequency range of validity by a factor of two over those recently presented, and that the latter represent a low-frequency approximation to the parameters given here. An
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Analysis of MODFET microwave characteristics
IEEE Transactions on Electron Devices, 1987A new ac MODFET model including distributed effects is presented. We have solved the wave equation of the MODFET, which automatically accounts for the propagation delay, capacitances, and charging resistances. Using a frequency power series proposed by Ziel, we derive an approximate analytic expression for the four intrinsic Y parameters.
P. Roblin +3 more
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Noise properties of AlGaAs/GaAs MODFET's
IEEE Transactions on Electron Devices, 1993An analytically tractable model is presented for the calculation of noise performance of a modulation-doped field-effect transistor (MODFET). The charge control is based on the self-consistent solution of Schrodinger and Poisson's equation. An improved velocity-field characteristic is used in the calculation. The fit provided by the developed theory to
A.F.M. Anwar, K.-W. Liu
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Instabilities in MODFET's and MODFET circuits
IEEE Transactions on Electron Devices, 1984We report some instability phenomena of modulation-doped field effect transistors (MODFET's). It can be caused by traps or by high-frequency oscillations. By the improvement of technology to reduce the trap density and careful circuit layout we can reduce the noise level in the high drain voltage region.
K.H. Duh +3 more
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Nonlinear parasitics in MODFETs and MODFET I-V characteristics
IEEE Transactions on Electron Devices, 1988A large-signal analysis of the source and drain resistance of MODFETs is reported. Velocity saturation in the two-dimensional electron gas (2DEG) and hypothetical rectifying effects in the n/sup +/-AlGaAs-i-GaAs interface are accounted for. Rectifying effects are found to be either absent or negligible.
P. Roblin +3 more
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1984 International Electron Devices Meeting, 1984
We have designed and fabricated a novel variation of the conventional modulation-doped heterostructure FET, based on growth by molecular beam epitaxy. The doping of the AlGaAs is confined to a thin layer, about 100A thick, close to the heterointerface. This increases the forward voltage of the Schottky gate, reduces the dependence of threshold voltage ...
M. Hueschen +3 more
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We have designed and fabricated a novel variation of the conventional modulation-doped heterostructure FET, based on growth by molecular beam epitaxy. The doping of the AlGaAs is confined to a thin layer, about 100A thick, close to the heterointerface. This increases the forward voltage of the Schottky gate, reduces the dependence of threshold voltage ...
M. Hueschen +3 more
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IEEE Transactions on Microwave Theory and Techniques, 1988
Accurate modeling of MODFETs and of certain novel structures recently proposed requires that a number of physical phenomena occurring in these devices be considered. Among these, some electron dynamic properties of the two-dimensional gas, the influence of deep levels of the doped AlGaAs layers, and the influence of the source parasitic access ...
G. Salmer +2 more
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Accurate modeling of MODFETs and of certain novel structures recently proposed requires that a number of physical phenomena occurring in these devices be considered. Among these, some electron dynamic properties of the two-dimensional gas, the influence of deep levels of the doped AlGaAs layers, and the influence of the source parasitic access ...
G. Salmer +2 more
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GaAs MODFET transconductance stability
IEEE Transactions on Reliability, 1990The thermal stability of GaAs modulation-doped field effect transistors (MODFETs) is evaluated in order to identify failure mechanisms and validate the reliability of these devices. The transistors were exposed to thermal step-stress and characterized at ambient temperatures to indicate device reliability, especially that of the transistor ohmic ...
S.A. Hanka +3 more
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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials, 1991
The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-
C.C. Eugster +3 more
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The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-
C.C. Eugster +3 more
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