Results 31 to 40 of about 85 (80)

Comparative study on performance of cubic AlxGa1−xN/GaN nanostructures MODFETs and MOS-MODFETs

Superlattices and Microstructures, 2013
Abstract We report some comparative results on cubic AlxGa1−xN/GaN nanostructures MODFET and MOS-MODFET. The drain current characteristics of cubic AlxGa1−xN/GaN MODFET and MOS-MODFET are simulated by changing the different device parameters such as Al content x and the cubic GaN buffer layer thickness using 2D nextnano3 numerical simulation software.
Driss Bouguenna, A. Boudghene Stambouli, N. Mekkakia Maaza, A. Zado, D.J. As   +4 more
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Dramatic reduction of sidegating in MODFETs

IEEE Transactions on Electron Devices, 1988
The results of systematic materials and process modifications to implant-isolated MODFETs, aimed at the elimination of sidegating in MODFET ICs, are reported. Two different methods of ion-implant isolation and four different kinds of MBE buffer layer were studied.
B.J.F. Lin, D.E. Mars, T.S. Low
openaire   +1 more source

Interaction of Phonons with the 2-DEG in a MODFET

1993
Using nanosecond pulse techniques, we have studied the direct emission and absorption of phonons by the same two-dimensional electron gas (2DEG) in a GaAs/AlGaAs modulation-doped field effect transistor structure (MODFET) [1]. Pulsed emission of phonons from a heterojunction has been observed by Chin et al [2], and by Hawker et al [3], and absorption ...
Sahraoui-Tahar, M, Wigmore, J.K, Erol, Mustafa, Wilkinson, C.D.W, Davies, J.H, Holland, M, Stanley, C, ARI, Mehmet   +7 more
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Backgating characteristics of MODFET structures

IEEE Electron Device Letters, 1985
Significant backgating in mesa-isolated AlGaAs/GaAs MODFET structures is reported. Results are presented on the influence of backgate potential on the electrical characteristics of enhancement-mode MODFET's fabricated on MBE grown material. An observed zero threshold voltage for the onset of backgating is attributed to a high level of current leakage ...
A. Ezis, D.W. Langer
openaire   +1 more source

MODFET versus MESFET: the capacitance argument

IEEE Transactions on Electron Devices, 1994
In this paper a detailed charge control analysis is presented for a MESFET and a MODFET to show how the various capacitances associated with the region under the gate contact influence device performance. Where necessary, an exact description of electron confinement is included in the solution scheme by solving the effective mass Schrodinger equation ...
C.G. Morton, J. Wood
openaire   +1 more source

Nonstationary Transport in MODFETs and Heterojunction Devices

Topical Meeting on Picosecond Electronics and Optoelectronics, 1987
New horizons have opened up in semiconductor research with the possibility of "band gap engineering" and the combination of signal transport by photons as well as electrons in new forms of ultra thin III-V compound layers.
openaire   +1 more source

Terahertz photomixing in strained silicon MODFET

35th International Conference on Infrared, Millimeter, and Terahertz Waves, 2010
Strained-Si modulation doped • eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where Δf=|f1-f2|=4 THz. A clear signal was observed with maximum located at around Vg=−0.15V and interpreted as due to the oscillation of the plasma waves under the gate bias.
Y. M. Meziani, A. El Moutaouakil, E. Velazquez, E. Diez, K. Fobelets, T. Otsuji   +5 more
openaire   +1 more source

High-Performance SiGe MODFET Technology

MRS Proceedings, 2004
ABSTRACTAn overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers.
S. J. Koester, J. O. Chu, K. L. Saenger, Q. C. Ouyang, J.A. Ott, D. F. Canaperi, J. A. Tornello, C.V. Jahnes, S. E. Steen   +8 more
openaire   +1 more source

A quasi‐variational inequality for the simulation of a MODFET transistor

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 1999
We introduce the drift‐diffusion model with appropriate jump conditions at the junction of the MODFET transistor (AlGaAs/GaAs). We propose a quasi‐variational inequality (QVI) model for this device. We assume that the electron density is bounded and piecewise constant.
Lefèvre, François, Nassif, Nabil
openaire   +1 more source

Picosecond MODFET IC pulse sharpener

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers, 2002
A monolithic synthetic transmission line pulse sharpener using a high power 0.25- mu m InGaAs-GaAs MODFET IC process is discussed. It current-sharpens a DC-to-5-GHz input to a pulse of at least 5-ps, 2-V output transition. This first implementation of a pulse-sharpening circuit in a MODFET IC process demonstrates the broadband capabilities of this ...
M.S. Shakouri, A. Black, D.M. Bloom, J. Perdomo, H. Kondoh, H. Vifian   +5 more
openaire   +1 more source