A large signal nonlinear MODFET model from small signal S-parameters [PDF]
, 1989 A general technique for predicting the MODFET large signal performance has been developed. The technique is based entirely on experimental data (small signal S-parameters at different biased points) and therefore is independent of the structure of the ...
Beyer, James B. +2 more
core +1 more source
Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices
VLSI Design, Volume 3, Issue 2, Page 211-224, 1995., 1995 According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main categories: the hydrodynamic (HD) model which basically follows Bløtekjer′s approach [1, 2], and the Energy Transport (ET) model which ...
Edwin C. Kan +4 more
wiley +1 more source
Variable-field hall technique: A new characterization tool for HFET/MODFET device wafers [PDF]
, 1995 A selective determination of the carrier density and mobility of a two-dimensional electron or hole gas in HFET or MODFET samples can be performed by measuring the magnetic-field-dependent resistivity and Hall coefficient over a field range of 1 Tesla ...
Koser, Holger, Brugger, Hans
core +1 more source
Characterization of MODFET dynamic memory cells [PDF]
, 1992 The MODFET structure was investigated to determine its suitability for dynamic memory applications. The MODFET DRAM capitalizes on the excellent speed and high charge densities at the MODFET heterointerface to yield a dynamic memory cell with good ...
Kleine, John Stuart
core
Ellipsometric study of InGaAs MODFET material [PDF]
, 1990 In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs.
Woollam, J. A. +6 more
core +1 more source
EMISSION AND ABSORPTION OF PHONONS BY THE 2-DIMENSIONAL ELECTRON-GAS IN A GAAS MODFET STRUCTURE [PDF]
, 1991 We have observed both emission and absorption of phonons by the two-dimensional electron gas in a GaAs modulation-doped field effect transistor (MODFET).
EROL, MUSTAFA +5 more
core +1 more source
Optimierung von 3D-SMODFETs auf GaAs- und InP-Substraten mit einem einfachen analytischen Modell [PDF]
, 2022 S.132-140Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels.
Braunstein, J. +4 more
core +1 more source
Development of Process Technology for GaAs E/D MODFET Logic Circuits [PDF]
, 1989 The GaAs MODFET device is one of the prominent candidates for very high speed circuit applications. This thesis presents the MODFET DCFL inverter and other logic circuit design and process development.
Chen, Kai, Cooper, James A., Jr
core +1 more source
Variable Angle of Incidence Spectroscopic Ellipsometric Measurement of the Franz-Keloysh Effect in Modfet Structures [PDF]
, 1986 It has been shown recently that variable angle of incidence spectroscopie ellipsometry (VASE) is a sensitive technique for determining semiconductor multilayer model parameters, e.g. layer thicknesses and ternary compositions.
P. G. Snyder, J. E. Oh, J. A. Woollam
core +1 more source
A simple method to determine carrier concentration dependence of mobility in a GaAs Modfet structure [PDF]
, 1996 A simple method of determining the relation between the sheet carrier concentration, ns, and the drift mobility, μ, of the two- dimensional electron gas (2DEG) in a Modulation Doped Field Effect Transistor (MODFET), is reported.
EROL, MUSTAFA
core