Results 21 to 30 of about 85 (80)

Modeling of MODFETs

IEEE Transactions on Microwave Theory and Techniques, 1988
Accurate modeling of MODFETs and of certain novel structures recently proposed requires that a number of physical phenomena occurring in these devices be considered. Among these, some electron dynamic properties of the two-dimensional gas, the influence of deep levels of the doped AlGaAs layers, and the influence of the source parasitic access ...
G. Salmer, J. Zimmermann, R. Fauquembergue   +2 more
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Nonlinear parasitics in MODFETs and MODFET I-V characteristics

IEEE Transactions on Electron Devices, 1988
A large-signal analysis of the source and drain resistance of MODFETs is reported. Velocity saturation in the two-dimensional electron gas (2DEG) and hypothetical rectifying effects in the n/sup +/-AlGaAs-i-GaAs interface are accounted for. Rectifying effects are found to be either absent or negligible.
P. Roblin, L. Rice, S.B. Bibyk, H. Morkoc   +3 more
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Pulse doped MODFET's

1984 International Electron Devices Meeting, 1984
We have designed and fabricated a novel variation of the conventional modulation-doped heterostructure FET, based on growth by molecular beam epitaxy. The doping of the AlGaAs is confined to a thin layer, about 100A thick, close to the heterointerface. This increases the forward voltage of the Schottky gate, reduces the dependence of threshold voltage ...
M. Hueschen, N. Moll, E. Gowen, J. Miller   +3 more
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An InAlAs/InAs MODFET

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials, 1991
The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-
C.C. Eugster, T.P.E. Broekaert, J.A. del Alamo, C.G. Fonstad   +3 more
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The problem of breakdown in MODFETs

Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994
Understanding the breakdown mechanisms in FETs is a key factor in designing high power MMICs. The breakdown can be improved by reducing the electric field at the drain, and the gate leakage current. For MESFETs the drain field can be reduced by increasing the distances between the drain and gate contact.
A. Hulsmann, W. Bronner, K. Kohler, M. Baeumler, J. Braunstein, P.J. Tasker   +5 more
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GaAs MODFET transconductance stability

IEEE Transactions on Reliability, 1990
The thermal stability of GaAs modulation-doped field effect transistors (MODFETs) is evaluated in order to identify failure mechanisms and validate the reliability of these devices. The transistors were exposed to thermal step-stress and characterized at ambient temperatures to indicate device reliability, especially that of the transistor ohmic ...
S.A. Hanka, C.H. Chen, P. Vold, T. Akinwande   +3 more
openaire   +1 more source

Physics of breakdown in InAlAs/InGaAs MODFET's

IEEE Transactions on Electron Devices, 1993
A detailed study of the physics of off-state breakdown in state-of-the-art lattice-matched and pseudomorphic InAlAs/InGaAs MODFETs is presented. It is found that, similarly to heterojunction avalanche photodiodes, breakdown in these devices is a two-step process.
S.R. Bahl, J.A. del Alamo, J. Dickmann, S. Schildberg   +3 more
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High-transconductance GaN MODFETs

Proceedings of International Electron Devices Meeting, 2002
Current-voltage (I-V) characteristics of both normally-on and normally-off AlGaN-GaN MODFETs have been presented. The sheet carrier concentration of GaN used for the fabrication of these devices is significantly high. Both normally-on and normally-off devices exhibit high transconductance g/sub m/.
O. Aktas, W. Kim, Z. Fan, F. Stengel, A. Botchkarev, A. Salvador, B. Sverdlov, S.N. Mohammad, H. Morkoc   +8 more
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Heterostructures in MODFETs

Solid-State Electronics, 1987
Abstract Modulation-doped AlGaAs/GaAs field-effect transistors (MODFETs) (also called HEMTs, TEGFETs, SDHFETs etc.) are currently the fastest switching FETs and they offer the lowest noise figures at microwave frequencies. In this contribution, first a short overview of the large variety of heterostructure arrangements useful for FET applications is ...
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Analysis of MODFET microwave characteristics

IEEE Transactions on Electron Devices, 1987
A new ac MODFET model including distributed effects is presented. We have solved the wave equation of the MODFET, which automatically accounts for the propagation delay, capacitances, and charging resistances. Using a frequency power series proposed by Ziel, we derive an approximate analytic expression for the four intrinsic Y parameters.
P. Roblin, null Sungchoon Kang, A. Ketterson, H. Morkoc   +3 more
openaire   +1 more source