Results 21 to 30 of about 97 (89)
Improved analytic MODFET charge-control model
Solid-State Electronics, 1993 Abstract A three-piece charge-control model has been derived for MODFETs which covers the three principal regions of operation—weak, moderate and strong inversion. The analytic model compares well with numerical computation of eqns (1a) and (1b).
G. George, J.R. Hauser
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Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]
Materials (Basel), 2023 Maimon O, Li Q.
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The Spatial Correlation and Anisotropy of β-(AlxGa1-x)2O3 Single Crystal. [PDF]
Materials (Basel), 2023 Li L +8 more
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Advancement and Challenges of Biosensing Using Field Effect Transistors. [PDF]
Biosensors (Basel), 2022 Thriveni G, Ghosh K.
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High transconductance-normally-off GaN MODFETs
Electronics Letters, 1995 Normally-off GaN based modulation doped field-effect transistors have been fabricated. The extrinsic transconductance of MODFETs with gate and channel lengths of 3 and 5 /spl mu/m, respectively, is as high as 120 mS/mm. The devices exhibit 300 mA/mm current at a positive gate bias of 3 V. This transconductance value compares very favourably with the 45
A. Özgür +7 more
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Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator. [PDF]
Materials (Basel), 2021 Chen YM, Lin HC, Lee KW, Wang YH.
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Recent Progress in Multiphase Thermoelectric Materials. [PDF]
Materials (Basel), 2021 Fortulan R, Aminorroaya Yamini S.
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A modulation-doped heterostructure-based terahertz photoconductive antenna emitter with recessed metal contacts. [PDF]
Sci Rep, 2020 Afalla J +15 more
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