Results 21 to 30 of about 451 (136)

Microscopic Modeling of GaN‐based Heterostructures

VLSI Design, Volume 13, Issue 1-4, Page 387-391, 2001., 2001
Self‐consistent quantum modeling of GaN‐based nanostructure are presented. The tight‐binding approach is used to calculate optical properties while optimized effective mass approaches are used to obtain the output characteristics of GaN HEMT.
F. Sacconi, F. Della Sala, A. Di Carlo, Paolo Lugli   +3 more
wiley   +1 more source

Contact Resistance Measurements in GaAs MESFET\u27s and MODFET\u27s by the Magneto‐TLM Technique [PDF]

, 1988
The standard transmission‐line model (TLM) for specific contact resistivity measurements of planar contacts is improved in two ways: (i) the addition of a magnetic field, which gives the mobility and carrier concentration of the bulk material, and the ...
Look, David C.
core   +2 more sources

RF Performance of Si/SiGe MODFETs: A Simulation Study

VLSI Design, Volume 8, Issue 1-4, Page 325-330, 1998., 1998
The microwave performance potential of Si/SiGe pseudomorphic MODFETs are studied, in comparison to state of the art InGaAs pseudomorphic HEMTs. Both devices have equivalent structures corresponding to a physical HEMT used for calibration. We use an RF analysis technique based on transient Monte Carlo simulations to estimate the intrinsic noise figures,
S. Roy, A. Asenov, S. Babiker, J. R. Barker, S. P. Beaumont   +4 more
wiley   +1 more source

Inclusion of Quantum Confinement Effects in Self‐Consistent Monte Carlo Device Simulations

VLSI Design, Volume 8, Issue 1-4, Page 21-27, 1998., 1998
The design of Monte Carlo FET simulations is discussed, with specific attention to the methods used to describe quantum confinement effects. A new model is presented, which employs self‐consistent coupling of Schrodinger, Poisson and Monte Carlo algorithms, and explicit calculation of the scattering rates between confined and unconfined states ...
R. W. Kelsall, A. J. Lidsey
wiley   +1 more source

Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications [PDF]

, 2003
Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped FETs (MODFETs) fabricated by Daimler Chrysler, numerical simulations have been used to study the impact of the device geometry and various doping ...
Watling, J. R., Elgaid, K., Barker, J. R., Hackbarth, T., Borici, M., Asenov, A., Yang, L., Roy, S., Thayne, I.   +8 more
core   +1 more source

Monte Carlo Calibrated Drift‐Diffusion Simulation of Short Channel HFETs

VLSI Design, Volume 8, Issue 1-4, Page 319-323, 1998., 1998
In this paper we present a methodology to use drift diffusion (DD) simulations in the design of short channel heterojunction FETs (HFETs) with well pronounced velocity overshoot. In the DD simulations the velocity overshoot in the channel is emulated by forcing the saturation velocity in the field dependent mobility model to values corresponding to the
A. Asenov, S. Babiker, S. P. Beaumont, J. R. Barker   +3 more
wiley   +1 more source

AlGaInP/GaInAs/GaAs MODFET-Bauelemente mit selbstjustiertem p+ -GaAs-Gate [PDF]

, 2022
S.329-334A self-aligned fabrication scheme of a novel AlGaInP/GaInAs/GaAs-MODFET device has been developed. Two characteristic features have been incorporated in the device structure: An AlGaInP barrier which provides a larger conduction band offset than
Winkler, K., Bachem, K.H., Tasker, P.J., Pletschen, Wilfried   +3 more
core  

Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self‐consistent Tight‐binding Calculations

VLSI Design, Volume 8, Issue 1-4, Page 469-473, 1998., 1998
A tight‐binding models which account for band mixing, strain and external applied potentials in a self‐consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation.
Andrea Reale, Aldo Di Carlo, Sara Pescetelli, Marco Paciotti, Paolo Lugli   +4 more
wiley   +1 more source

High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates [PDF]

, 2004
Si/Ge/Si n-type modulation doped field effect structures and transistors (n-MODFET's) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm(exp 2)/Vs were measured at room temperature.
Mueller, Carl, Ponchak, George, Croke, Edward, Alterovitz, Samuel   +3 more
core   +3 more sources

Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models

VLSI Design, Volume 8, Issue 1-4, Page 495-500, 1998., 1997
Physical simulation of semiconductor devices at high frequencies involves not only semiconductor transport issues but also electromagnetic wave propagation issues. In order to obtain the nonlinear and the large‐signal characteristics of the semiconductor devices, an electromagnetic model should replace the traditional quasi‐static model in the device ...
S. M. Sohel Imtiaz, Samir M. El-Ghazaly, Robert O. Grondin   +2 more
wiley   +1 more source