Results 41 to 50 of about 85 (80)
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IEEE Circuits and Devices Magazine, 1991
The operation of MODFETs (modulation-doped FETs) is explained. These devices now have switching delays under 5 ps, current-gain cutoff frequencies of about 250 GHz, and maximum oscillation frequencies in excess of 400 GHz. They also perform frequency division up to 26 GHz.
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The operation of MODFETs (modulation-doped FETs) is explained. These devices now have switching delays under 5 ps, current-gain cutoff frequencies of about 250 GHz, and maximum oscillation frequencies in excess of 400 GHz. They also perform frequency division up to 26 GHz.
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High transconductance Al0.3Ga0.7As/GaAs MODFETs
Microelectronic Engineering, 1990Abstract Bulk and planar doped 0.2μm gate length Al0.3Ga0.7As/GaAs MODFETs have been fabricated by using a three step e-beam lithography process. The DC electric measurements of the planar doped MODFETs demonstrate peak extrinsic transconductances as high as 625mS/mm.
Y. Jin +4 more
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P-channel MODFET as an optoelectronic detector
SPIE Proceedings, 2002Optical response of both the gate current and the drain current in p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET is reported and analytic models are presented. Based on quantum nature of the two-dimensional carrier statistics in the channel and a new model for the gate current, the overall current variation under optical ...
Hwe-Jong Kim +5 more
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Nonlinear model for MODFET parasitic resistances
Solid-State Electronics, 1992Abstract An analytical nonlinear model for the parasitic resistances of modulation doped field effect transistors (MODFETs) has been developed. In this model, the effect of electron velocity saturation, surface potential and gate voltage on the nonlinearity of the resistances is investigated.
Ibrahim M. Abdel-Motaleb, C.N. Li
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Electroluminescence of Ge/SiGe p-MODFETs
Materials Science in Semiconductor Processing, 2005Abstract In order to investigate impact ionization we have performed electrical DC measurements and electroluminescence (EL) spectroscopy on strained Ge on Si0.4Ge0.6 p-MODFETs. These measurements are discussed in comparison with energy band structure calculation and high electric field transport simulation.
S. Richard +6 more
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Charge collection in GaAs MESFETs and MODFETs
IEEE Transactions on Nuclear Science, 1991A comparison of the amount of charge collected at the drains of GaAs MESFETs irradiated with pulsed laser light and ions and having different gate lengths shows orders of magnitude more charge collected for 0.1 mu m MESFETs than for 1.2 mu m MESFETs manufactured using different processes.
S. Buchner +7 more
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Scaling of parasitics in mm-wave MODFETs
SPIE Proceedings, 1990Parasitics must be reduced for mm-wave MODFETs to realize their high potential. The parasitic resistances must be reduced so that (1) parasitic charging time is negligible, (2) to maintain the fj/fmax ratio, and (3) noise figure and power performance are not degraded significantly. The parasitic resistance must be scaled as l/fj.
Brian Hughes, Paul J. Tasker
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High-Performance Quarter-Micron-Gate MODFETs
Topical Meeting on Picosecond Electronics and Optoelectronics, 1987Modulation-doped FETs provide a significant performance advantage over conventional GaAs FETs due to the superior transport properties of the two-dimensional electrons which form the conductive channel in these devices. Table 1 compares the material and device characteristics of different FET devices. At TRW quarter-micron-gate AlGaAs/GaAs MODFETs have
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Characterization of MODFET’s with 1/f noise
AIP Conference Proceedings, 1993We present the results of a comparative 1/f noise study on experimental MODFET’s of two fabrication processes. The two processes differ in the way the gate is etched. The first process uses etching fluids, the second plasma etching. The last process may lead to considerable damage in the semiconductor layer under the gate.
H. A. W. Markus, T. G. M. Kleinpenning
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