Growth of AlGaAs/GaAs Modfet Structures by Gsmbe Using Triethylalkyls and Arsine [PDF]
, 1989 We have grown high quality AlGaAs/GaAs heterostructures by GSMBE, using triethylalkyls and arsine, for MODFET device applications. Al.28Ga.72As/GaAs modulation-doped structures with moblilities as high as 7,200 and 47,000 cm2/V-s at 300 and 77K ...
Paul Mcleodl, Yi-Ching Pao, Yu-Min Houng
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Modeling of Transverse Propagation Delays in the GaAs/AlGaAs Modulation Doped Heterojunction Field Effect Transistors [PDF]
, 1993 We have developed a computer-efficient algorithm to calculate the transverse propagation delays in a GaAs/AlGaAs MODFET. The model includes the intrinsic as well as the extrinsic parameters of the MODFET.
Goel, Ashok K., Xu, Wei
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High frequency analysis of fast devices using small-signal Monte Carlo simulations : application to a 0.1 $\mu$m-gate MODFET [PDF]
, 1993 A method of small signal analysis of fast devices using Monte Carlo simulations is presented. It consists in expanding the terminal currents and voltages in Fourier series.
P. Hesto +3 more
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Evaluating of MODFET gate capacitance and current gain cutoff frequency [PDF]
, 2004 In this paper, new analytical expressions have been derived setting the relation among channel carrier capacitance C(2D), sheet density carriers n(s), gate bias v(G), intrinsic parameters of semiconductor layers, and devices geometry.
Čevizović, Dalibor +4 more
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Modeling of the transverse delays in modulation-doped heterojunction field-effect transistors [PDF]
, 1991 © 1991 IEEE. The authors have developed a computer-efficient algorithm and the related CAD oriented software to calculate the transverse propagation delay in a MODFET.
Goel, A. K., Xu, Wei
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Determination of the transverse delays in the GaAs/AIGaAs modfets [PDF]
, 1992 We have developed a computer‐efficient algorithm and the related CAD‐oriented software to calculate the transverse propagation delays in a GaAs/AlGaAs MODFET.
A. K. Goel, Wei Xu, Goel, A. K., Xu, Wei
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Transport Phenomena in Two-Dimensional Structures with Quantum Dots [PDF]
, 2005 A model that explains the unusual characteristics of the AlGaAs/GaAs modulation-doped field-effect transistor (MODFET) with InAs quantum dots incorporated in the GaAs channel is presented.
Požela, J.
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High Electron Mobility in SiGe/Si n-MODFET Structures on Sapphire Substrates [PDF]
, 2003 For the first time, SiGe/Si n-Modulation Doped Field Effect Transistors (n-MODFET) structures have been grown on sapphire substrates. Room temperature electron mobility value of 1271 square centimeters N-sec at an electron carrier density (n(sub e) = 1 ...
Mueller, Carl H. +2 more
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Gradierte Puffer auf GaAs als Substrate für Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As MODFETs [PDF]
, 2022 S.589-592Ternary Al(0.48)In(0.52) As/Ga(0.47)In(0.53)As/Al(0.48)In(0.52)As MODFET structures on top of a buffer on GaAs substrate have been grown by molecular beam epitaxy.
Braunstein, J. +5 more
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Study of InGaAs based MODFET structures using variable angle spectroscopic ellipsometry [PDF]
, 1991 Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs based MODFET structures.
Sekula-Moise, P. A. +7 more
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