Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]
Materials (Basel), 2023 Maimon O, Li Q.
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MBE growth and characterization of MODFET heterostructures using pseudomorphic InGaAs or InAs/GaAs superlattice channels [PDF]
We studied the influence of the growth temperature Ts and of the InGaAs quantum-well channel thickness dch on the 300 and 77 K Hall electrical properties of pseudomorphic MODFET-type heterostructures grown by molecular-beam epitaxy (MBE).
Py, M.A. +2 more
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HETEROSTRUCTURE FIELD EFFECT TRANSISTOR, PHYSICAL ANALYSIS AND NEW STRUCTURES [PDF]
, 1988 Les principaux phénomènes physiques qui se produisent dans les MODFET conventionnels AlGaAs/GaAs sont décrits brièvement : structures quantiques, propriétés de transport - influence du champ électrique. La modélisation des composants permet d'obtenir des
G. SALMER
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The Spatial Correlation and Anisotropy of β-(AlxGa1-x)2O3 Single Crystal. [PDF]
Materials (Basel), 2023 Li L +8 more
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Advancement and Challenges of Biosensing Using Field Effect Transistors. [PDF]
Biosensors (Basel), 2022 Thriveni G, Ghosh K.
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Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor [PDF]
, 2006 We demonstrated ferroelectricfield effect transistors (FFETs) with hysteretic I-V characteristics in a modulation-doped field effect transistors(MODFET)AlGaN∕GaN platform with ferroelectricPb(Zr,Ti)O3 between a GaN channel and a gate metal. The pinch-off
Jinqiao Xie +23 more
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Recent Progress in Multiphase Thermoelectric Materials. [PDF]
Materials (Basel), 2021 Fortulan R, Aminorroaya Yamini S.
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Magnetoresistance Method To Determine GaAs and Alxga1-Xas Mobilities in Alxga1-Xas/GaAs Modulation-Doped Field-Effect Transistor Structures [PDF]
, 1985 Charge carrier mobilities are conveniently measured in simple, homostructure field-effect transistors (FET\u27s) by means of the geometric magnetoresistance (GMR) technique.
T. Henderson +9 more
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Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator. [PDF]
Materials (Basel), 2021 Chen YM, Lin HC, Lee KW, Wang YH.
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Gds-Analyse pseudomorpher MODFETs auf GaAs Substrat mit Gatelängen bis zu 0.1 mym [PDF]
, 2022 S.31-32 : Abb.,Lit.A set of pseudomorphic MODFETs with different epilayer structures and gate lengths between 1 mym and 0.1 mym was investigated. Functional dependencies wee derived to allow further gate length reduction for ultimate MODFET performance ...
Braunstein, J. +5 more
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