Results 51 to 60 of about 97 (89)
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MODFET versus MESFET: the capacitance argument
IEEE Transactions on Electron Devices, 1994In this paper a detailed charge control analysis is presented for a MESFET and a MODFET to show how the various capacitances associated with the region under the gate contact influence device performance. Where necessary, an exact description of electron confinement is included in the solution scheme by solving the effective mass Schrodinger equation ...
C.G. Morton, J. Wood
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Low frequency noise sources in InAlAs/InGaAs MODFET's
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM), 1996In this work, we present a study of various low-frequency noise (LFN) sources in InAlAs/InGaAs MODFET structures. The contributions of the main noise sources-drain and source contact resistance fluctuations, channel charge fluctuations and gate current noise-are separated by measuring the drain current power noise spectrum on uncompleted, gate free ...
Viktorovitch, P. +6 more
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Dramatic reduction of sidegating in MODFETs
IEEE Transactions on Electron Devices, 1988The results of systematic materials and process modifications to implant-isolated MODFETs, aimed at the elimination of sidegating in MODFET ICs, are reported. Two different methods of ion-implant isolation and four different kinds of MBE buffer layer were studied.
B.J.F. Lin, D.E. Mars, T.S. Low
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High performance GaSb p-channel MODFETs
International Technical Digest on Electron Devices, 2002GaSb p-channel MODFETs based on an AlSbAs-AlSb barrier and GaSb channel have been fabricated and studied. High transconductances and low gate leakage currents have been obtained. Peak transconductances as high as 50 mS/mm at room temperature and in the range of 220-283 mS/mm at 77 K have been achieved.
L.F. Luo, K.F. Longenbach, W.I. Wang
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Noise behavior of SiGe n-MODFETS
Materials Science in Semiconductor Processing, 2005This paper presents an investigation of the low-frequency noise properties of SiGe-based on n-MODFETs through the characterization of both the gate current noise and the drain current noise, including their correlation. Measurements vs. bias and gate geometry have shown that this noise is generated through mobility fluctuations or carrier diffusion at ...
A. Rennane +6 more
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Performance evaluation of GaAs based MODFETs
Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 2003Three key aspects of AlGaAs/InGaAs/GaAs MODFETs, namely current-handling capability, signal delay, and saturated output regime, are experimentally evaluated and correlated with the heterostructure configuration. Gate lengths down to 0.1 mu m and corresponding cutoff frequencies above 140 GHz are employed.
E. Kohn, A. Lepore, H. Lee, M. Levy
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Simulations of Si:SiGe MODFET analogue applications
International Journal of Electronics, 2002We present simulations of different analogue building blocks using n-type depletion-mode Si:SiGe modulation doped field effect transistors (MODFETs). The device parameters used are extracted from the dc measurements of the SiGe MODFETs by using the Si MOSFET model in HSPICE.
K. Fobelets +3 more
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Terahertz imaging using strained-Si MODFETs as sensors
Solid-State Electronics, 2012Development of new terahertz (THz) direct sensors based on the oscillation of the plasma waves in the channel of sub-micron FETs is increasing in interest due to its great potential in imaging and spectroscopy. FETs based in the heterosystem Si/SiGe is wafer-compatible with mainstream CMOS closely follow both noise and gain performances of III-V ...
Y. M. Meziani +7 more
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IEEE Circuits and Devices Magazine, 1991
The operation of MODFETs (modulation-doped FETs) is explained. These devices now have switching delays under 5 ps, current-gain cutoff frequencies of about 250 GHz, and maximum oscillation frequencies in excess of 400 GHz. They also perform frequency division up to 26 GHz.
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The operation of MODFETs (modulation-doped FETs) is explained. These devices now have switching delays under 5 ps, current-gain cutoff frequencies of about 250 GHz, and maximum oscillation frequencies in excess of 400 GHz. They also perform frequency division up to 26 GHz.
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The problem of breakdown in MODFETs
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994Understanding the breakdown mechanisms in FETs is a key factor in designing high power MMICs. The breakdown can be improved by reducing the electric field at the drain, and the gate leakage current. For MESFETs the drain field can be reduced by increasing the distances between the drain and gate contact.
A. Hulsmann +5 more
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