Results 71 to 80 of about 451 (136)
Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS [PDF]
This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the
Schulte, Donald W.
core
Impact of device resistances in the performance of graphene-based terahertz photodetectors. [PDF]
Front OptoelectronCastelló O +8 more
europepmc +1 more source
High-Performance SiGe MODFET Technology [PDF]
MRS Proceedings, 2004 ABSTRACTAn overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers.
S. J. Koester +8 more
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An improved MODFET microwave analysis
IEEE Transactions on Electron Devices, 1988A recently proposed MODFET analysis is improved by presenting more accurate expressions for the MODFET admittance parameters. It is shown that the resulting parameters can improve the frequency range of validity by a factor of two over those recently presented, and that the latter represent a low-frequency approximation to the parameters given here. An
exaly +2 more sources
High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
IEEE Transactions on Electron Devices, 2000High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide-semiconductor MODFET (MOS-MODFET) with 0.1 /spl mu/m gate-length have been fabricated on a high hole mobility SiGe-Si heterojunction grown by ultrahigh vacuum chemical vapor deposition.
J O Chu, T ‐P Ma, S J Koester
exaly +2 more sources
A quasi‐variational inequality for the simulation of a MODFET transistor [PDF]
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 1999 We introduce the drift‐diffusion model with appropriate jump conditions at the junction of the MODFET transistor (AlGaAs/GaAs). We propose a quasi‐variational inequality (QVI) model for this device. We assume that the electron density is bounded and piecewise constant.
Lefèvre, François, Nassif, Nabil
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Instabilities in MODFET's and MODFET circuits
IEEE Transactions on Electron Devices, 1984We report some instability phenomena of modulation-doped field effect transistors (MODFET's). It can be caused by traps or by high-frequency oscillations. By the improvement of technology to reduce the trap density and careful circuit layout we can reduce the noise level in the high drain voltage region.
K.H. Duh +3 more
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IEEE Transactions on Microwave Theory and Techniques, 1988
Accurate modeling of MODFETs and of certain novel structures recently proposed requires that a number of physical phenomena occurring in these devices be considered. Among these, some electron dynamic properties of the two-dimensional gas, the influence of deep levels of the doped AlGaAs layers, and the influence of the source parasitic access ...
G. Salmer +2 more
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Accurate modeling of MODFETs and of certain novel structures recently proposed requires that a number of physical phenomena occurring in these devices be considered. Among these, some electron dynamic properties of the two-dimensional gas, the influence of deep levels of the doped AlGaAs layers, and the influence of the source parasitic access ...
G. Salmer +2 more
openaire +1 more source