Results 61 to 70 of about 97 (89)
Some of the next articles are maybe not open access.
Terahertz detection using Si-SiGe MODFETs
2013 Spanish Conference on Electron Devices, 2013We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by two types of THz sources at 0.292 THz and at 1.5 THz. Non-resonant response with maxima around the threshold voltage was observed.
Y. M. Meziani +7 more
openaire +1 more source
Electroluminescence of Ge/SiGe p-MODFETs
Materials Science in Semiconductor Processing, 2005Abstract In order to investigate impact ionization we have performed electrical DC measurements and electroluminescence (EL) spectroscopy on strained Ge on Si0.4Ge0.6 p-MODFETs. These measurements are discussed in comparison with energy band structure calculation and high electric field transport simulation.
S. Richard +6 more
openaire +1 more source
Nonstationary Transport in MODFETs and Heterojunction Devices
Topical Meeting on Picosecond Electronics and Optoelectronics, 1987New horizons have opened up in semiconductor research with the possibility of "band gap engineering" and the combination of signal transport by photons as well as electrons in new forms of ultra thin III-V compound layers.
openaire +1 more source
Nonlinear model for MODFET parasitic resistances
Solid-State Electronics, 1992Abstract An analytical nonlinear model for the parasitic resistances of modulation doped field effect transistors (MODFETs) has been developed. In this model, the effect of electron velocity saturation, surface potential and gate voltage on the nonlinearity of the resistances is investigated.
Ibrahim M. Abdel-Motaleb, C.N. Li
openaire +1 more source
Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs
IEEE Transactions on Electron Devices, 1988MODFETs have been fabricated using heterojunctions consisting of AlGaAs and pseudomorphic InGaAs, grown on GaAs substrates. The large conduction band discontinuity (about 0.46 eV for 25% In and Al concentration) leads to a 2-D electron density as high as 2.3*10/sup 12/ cm/sup -2/, with electron mobilities of 7000 and 16000 cm/sup 2//V-s at 300 and 77 K,
N. Moll +2 more
openaire +1 more source
2-D analytical model for current-voltage characteristics and output conductance of AlGaN/GaN MODFET
Microwave and Optical Technology Letters, 2001Subhasis Haldar
exaly
MODFETs: OPERATION, STATUS AND APPLICATIONS
1996S. NOOR MOHAMMAD, HADIS MORKOÇ
openaire +1 more source