Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects [PDF]
, 1993 A theoretical study of 50 nm-Single and Dual-Gate MODFETs using Monte Carlo simulation is reported. The introduction of a second gate, whose potential is fixed to a positive value, between the control-gate and the drain allows to efficiently provide ...
P. Hesto +3 more
core +1 more source
A large signal nonlinear MODFET model from small signal S-parameters [PDF]
A general technique for predicting the MODFET large signal performance has been developed. The technique is based entirely on experimental data (small signal S-parameters at different biased points) and therefore is independent of the structure of the ...
Beyer, Jb +1 more
core
Design and technology analysis of high performance heterojunction field effect transistors for submicron LSI/VLSI structures [PDF]
, 2015 Проведено аналіз швидкодії гетероструктурних польових транзисторів із селективним легуванням (ПТГСЛ), багатоканальних ПТГСЛ та ПТГСЛ з оберненою структурою, а також польових транзисторів з гетерозатвором високої щільності.
Новосядлий, Степан Петрович +1 more
core
The novel MODFET with very high transconductances and a very thin buffer layer [PDF]
, 1999 Modulation-Doped Field Effect Transistors (MODFETs) have gained much attention in recent years because of their ultrahigh speed and inherently low device noise.
Lau, Tak Keung
core
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors [PDF]
, 2006 Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence
Zeng, YP (Zeng, Yiping) +9 more
core
A modulation-doped heterostructure-based terahertz photoconductive antenna emitter with recessed metal contacts. [PDF]
Sci Rep, 2020 Afalla J +15 more
europepmc +1 more source
High Mobility SiGe/Si n-Type Structures and Field Effect Transistors on Sapphire Substrates [PDF]
, 2004 SiGe/Si n-type modulation doped field effect transistors (MODFETs) fabricated on sapphire substrates have been characterized at microwave frequencies for the first time.
Ponchak, George E. +3 more
core +1 more source
Characterization of high-speed electronic devices using ultrafast lasers [PDF]
, 1996 This thesis describes experimental studies on high-speed modulation-doped field-effect transistors (MODFETs), using electro-optic sampling (EOS). The author has built an EOS system with subpicosecond temporal resolution and TeraHertz bandwidth. Due to
Zeng, An
core
High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques [PDF]
, 2004 System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power ...
Mueller, Carl +3 more
core +1 more source